A wafer boat according to the present disclosure includes a plurality of support columns, each having a pillar shape and comprising a plurality of grooves configured to have a wafer placed thereon, and support plates configured to support both end portions of the plurality of support columns, respectively. Each of the plurality of support columns are formed of a ceramic containing aluminum oxide or silicon carbide as a main constituent, and an outer side surface of the plurality of support columns is a ground surface and/or a polished surface.

Provided is a semiconductor transport member that includes a semiconductor mounting member capable of expressing a strong gripping force and unlikely to cause a contaminant to adhere and remain on a semiconductor side. Also provided is a semiconductor mounting member capable of expressing a strong gripping force and unlikely to cause a contaminant to adhere and remain on a semiconductor side. The semiconductor transport member of the present invention includes: a carrying base; and a semiconductor mounting member, in which: the semiconductor mounting member includes a fibrous columnar structure; the fibrous columnar structure includes a fibrous columnar structure including a plurality of fibrous columnar objects; the fibrous columnar objects are each aligned in a direction substantially perpendicular to the carrying base; and a surface of the fibrous columnar structure on an opposite side to the carrying base has a coefficient of static friction against a glass surface of 2.0 or more.

Systems and methods to improve an industrial heater are disclosed. The heater comprises a horizontal cylinder oriented parallel to the ground and may encase an interior recess running the length of the heater. The heater may be divided into a plurality of sections or zones. One or more mid-rings may support the structure of the heater, and may be disposed at the intersections of adjacent sections or zones. A plurality of interior boards and/or insulation layers may line the interior façade, and may be configured to overlap each other and/or interlock together. The interlocking structure may be absent of any gap or space to prevent heat loss from the interior recess. One or more heat strips may be configured in a sinusoidal pattern. The strips may be mirrored on the opposite side of the interior recess, and may be configured to elongate in the direction opposite of gravity.

A manufacturing method of the ESD protection device includes the following steps. A surface treatment is performed on the substrate. A link layer is formed on the substrate after the surface treatment, wherein a material of the link layer includes a metal material. A progressive layer is formed on the link layer, wherein a material of the progressive layer includes a non-stoichiometric metal oxide material, and an oxygen concentration in the non-stoichiometric metal oxide material is increased gradually away from the substrate in a thickness direction of the progressive layer. A composite layer is formed on the progressive layer, wherein the composite layer includes a stoichiometric metal oxide material and a non-stoichiometric metal oxide material, and a ratio of the non-stoichiometric metal oxide material and the stoichiometric metal oxide material in the composite layer may make a sheet resistance value of the composite layer 1×10.sup.7 to 1×10.sup.8 Ω/sq.

There is provided a substrate processing method including: reducing an oxide of a ruthenium film by supplying a hydrogen-containing gas to a substrate including the ruthenium film; etching the ruthenium film by supplying an oxygen-containing gas to the substrate so as to oxidize the ruthenium film; and repeating, multiple times, a cycle including reducing the oxide of the ruthenium film and etching the ruthenium film.

Disclosed is a graphite disc solving a problem of poor performance uniformity of the epitaxial wafer, which is obtained during material epitaxial growth by using the graphite disc. The graphite disc includes a graphite disc body, where the graphite disc body includes a groove and a plurality of projections on a bottom wall of the groove, and the plurality of projections divide the groove into a plurality of independent regions. According to the graphite disc provided by the present disclosure, a plurality of regions are defined in the groove by using the projections, each region corresponds to one substrate, and different regions are interconnected. Compared with the graphite disc structure with one groove corresponding to one substrate in the related art, a space for gas flow is enlarged, therefore a problem that an edge of the epitaxial wafer is too thick caused by gas flow is alleviated.

A microLED mass transfer stamping system includes a stamp substrate with an array of trap sites, each configured with a columnar-shaped recess to temporarily secure a keel extended from a bottom surface of a microLED. In the case of surface mount microLEDs, the keel is electrically nonconductive. In the case of vertical microLEDs, the keel is an electrically conductive second electrode. The stamping system also includes a fluidic assembly carrier substrate with an array of wells having a pitch separating adjacent wells that matches the pitch separating the stamp substrate trap sites. A display substrate includes an array of microLED pads with the same pitch as the trap sites. The stamp substrate top surface is pressed against the display substrate, with each trap site interfacing a corresponding microLED site, and the microLEDs are transferred. Fluidic assembly stamp substrates are also presented for use with microLEDs having keels or axial leads.

A holding device for holding a plurality of substrates for plasma-enhanced deposition of a layer from the gas phase on the substrates, having: inner carrier plates, arranged parallel to one another and designed to carry substrates on mutually opposite sides; outer carrier plates, arranged parallel to the inner carrier plates and having an inner side facing the inner carrier plates, and an outer side facing away from the inner carrier plates, wherein each outer carrier plate is designed to carry one or more substrates on its inner side and to be free of substrates on its outer side; and shielding plates which are each arranged at a distance from the outer side of the outer carrier plate such that, as seen in a plan view of the outer carrier plates, the shielding plates at least predominantly shield the outer carrier plates, wherein each shielding plate is free of substrates.

A substrate support includes a top plate portion having a surface on which a substrate is placed; a light irradiation mechanism including light-emitting elements, disposed to face the substrate and heating the substrate using light from the light-emitting elements; a channel-forming member transmitting the light from the light-emitting elements and is bonded to a rear surface of the top plate portion so as to be interposed between the top plate portion and the light irradiation mechanism, and a temperature adjustment part for adjusting a temperature of the channel-forming member by using light having a wavelength absorbed by a light-transmitting material or the channel-forming member. Refrigerant channels are formed between the channel-forming member and the top plate portion, a refrigerant transmitting the light from the light-emitting elements flows through the refrigerant channels, and the top plate portion and the channel-forming member are made of materials having different thermal expansion coefficients.

A substrate support includes a disc body with upper and lower surfaces spaced apart by a thickness. The upper surface has a circular concavity extending about a rotation axis, an annular ledge portion radially outward of the concavity extending circumferentially about the concavity, and an annular rim portion radially outward of the ledge portion extending circumferentially about the ledge portion. The concavity has a circular perforated portion and an annular unperforated portion. The perforated portion extends about the rotation axis and defines two or more perforations to issue an etchant into a cavity defined between the concavity and a backside of a substrate seated on the substrate support. The unperforated portion is radially outward of the perforated portion and extends circumferentially about the perforated portion to limit etching of the backside of the substrate by the etchant. Semiconductor processing systems and material layer deposition methods are also described.