Disclosed herein is an electronic component that includes: a substrate; a capacitor on the substrate; a first insulating resin layer embedding therein the capacitor; an inductor provided on the first insulating resin layer and connected to the capacitor, the inductor including a conductor pattern; a second insulating resin layer embedding therein the inductor; a third insulating resin layer on the second insulating resin layer; a post conductor having a lower end and an upper end and penetrating the third insulating resin layer such that the lower end of the post conductor is connected to the inductor; and a terminal electrode on the third insulating resin layer and connected to the upper end of the post conductor. In a thickness direction of the substrate, the height of the post conductor is larger than a thickness of a conductor pattern constituting the inductor.

A method includes obtaining sensor data associated with a deposition process performed in a process chamber to deposit film on a surface of a substrate. A plurality of physics-based outputs are generated using a transformation function and the sensor data. The transformation function is used to at least one of estimate site availability for growth at an equilibrium condition for the process chamber or estimate boundary layer thickness in an equilibrium condition for the process chamber. The physics-based outputs are mapped to a training set and a virtual model is trained based on the training set and the sensor data. The virtual model is trained to generate predictive metrology data associated with the film.

There is provided a technique capable of suppressing a heat diffusion. There is provided a technique that includes: a process chamber in which a substrate with a first film doped with a dopant and a second film different from the first film formed on the substrate is processed; an electromagnetic wave supplier configured to supply an electromagnetic wave to the substrate; and a controller configured to be capable of controlling the electromagnetic wave supplier to stop supplying the electromagnetic wave before the second film is heated while the dopant is being heated by the electromagnetic wave.

A high performance integrated tunable impedance matching network with coupled merged inductors. Embodiments include a combination of merged multiport constructively coupled spiral inductors and tunable capacitors configured to reduce insertion losses, circuit size, and optimization time while maintaining a high Q factor for the coupled spiral inductors. Some embodiments integrate one or more filter circuits with a tunable impedance matching network, useful in conjunction with such applications as radio frequency power amplifiers.

In an aspect, an interposer includes a substrate, a first metallization layer on the substrate and having a first plurality of conductive patterns, a second metallization layer having a second plurality of conductive patterns, and a via layer disposed between the first metallization layer and the second metallization layer and having a plurality of vias. At least a portion of the first plurality of conductive patterns, a portion of the second plurality of conductive patterns, or both may be configured to form a first inductor device and a second inductor device. The first inductor device may be electrically coupled between a first power node and a second power node of the interposer. The second inductor device may be electrically coupled between the first power node and a third power node of the interposer.

An electronic device includes a plurality of light emitting units, a plurality of sensing units, and a sensor driving unit. The plurality of light emitting units are disposed on a first substrate. The plurality of sensing units correspond to the plurality of light emitting units, and the plurality of light emitting units and the plurality of sensing units are disposed in a same region. The sensor driving unit is coupled to at least a portion of the plurality of sensing units, and the plurality of light emitting units and the sensor driving unit are partially overlapped with each other.

An electronic device includes a first substrate, a light emitting unit, a sensing unit, and first to third transistors. The light emitting unit is disposed on the first substrate. The sensing unit is disposed on the first substrate and adjacent to the light emitting unit. The first transistor is disposed on the first substrate and electrically connected to the light emitting unit. The second transistor is disposed on the first substrate and electrically connected to the first transistor, wherein a semiconductor of the first transistor is different in material from a semiconductor of the second transistor. The third transistor is disposed on the first substrate and electrically connected to the sensing unit, wherein a semiconductor of the third transistor and one of the semiconductor of the first transistor and the semiconductor of the second transistor are the same in material.

A method comprises performing an ion beam implant in a semiconductor substrate to form an ion-induced damage layer at an implant depth in the semiconductor substrate, wherein a portion of the substrate above the ion-induced damage layer defines a substrate film region, a portion of the substrate below the ion-induced damage layer defines a bulk substrate region. Semiconductor device components are formed on the substrate film region, defining a substrate film-based semiconductor device structure. A stressed film is formed on the semiconductor device components, which introduces internal forces in the substrate film-based semiconductor device structure. The substrate film-based semiconductor device structure is separated from the bulk substrate region at the ion-induced damage layer, wherein the separation is facilitated by (a) the ion-induced damage layer and (b) the internal forces introduced by the stressed film. The separated substrate film-based semiconductor device structure may be mounted on a carrier.

A method includes obtaining sensor data associated with a deposition process performed in a process chamber to deposit film on a surface of a substrate. A plurality of physics-based outputs are generated using a transformation function and the sensor data. The transformation function is used to at least one of estimate site availability for growth at an equilibrium condition for the process chamber or estimate boundary layer thickness in an equilibrium condition for the process chamber. The physics-based outputs are mapped to a training set and a virtual model is trained based on the training set and the sensor data. The virtual model is trained to generate predictive metrology data associated with the film.