A semiconductor device includes passive electrical components in a substrate; and an interconnect structure over the passive electrical components, conductive features of the interconnect structure being electrically coupled to the passive electrical components. The conductive features of the interconnect structure includes a first conductive line over the substrate; a conductive bump over the first conductive line, where in a plan view, the conductive bumps has a first elongated shape and is entirely disposed within boundaries of the first conductive line; and a first via between the first conductive line and the conductive bump, the first via electrically connected to the first conductive line and the conductive bump, where in the plan view, the first via has a second elongated shape and is entirely disposed within boundaries of the conductive bump.

An ultralong time constant time measurement device includes elementary capacitive elements that are connected in series. Each elementary capacitive element is formed by a stack of a first conductive region, a dielectric layer having a thickness suited for allowing charge to flow by direct tunneling effect, and a second conductive region. The first conductive region is housed in a trench extending from a front face of a semiconductor substrate down into the semiconductor substrate. The dielectric layer rests on the first face of the semiconductor substrate and in particular on a portion of the first conductive region in the trench. The second conductive region rests on the dielectric layer.

The present disclosure relates to a folding frame for a foldable display and a foldable display. A folding frame for a foldable display may include: a reference plane; a first folding plane disposed at one side of the reference plane; a second folding plane disposed at another side of the reference plane; a first bending part disposed between the reference plane and the first folding plane and having a first bending radius; and a second bending part disposed between the reference plane and the second folding plane and having a second bending radius, wherein the first folding plane is thinner than the reference plane.

An IC includes a substrate including metal levels thereon including a top and bottom metal level with at least a transmit (Tx) circuit and receive (Rx) circuit each having 1 isolation capacitor and an inductor. A scribe seal around the IC includes a first portion around the Tx circuit and second portion around the Rx circuit, utilizing 2 of the metal levels including at least an outer metal stack. The Tx and Rx circuits are side-by-side along a direction that defines a length for the scribe seal. The outer metal stack includes a neck region between the scribe seal portions including a shorting structure including metal level(s) for shorting together the outer metal stack of the scribe seal portions. An optional routing pass-through isolated from the shorting structure includes other metal layers connecting through the neck region between node(s) within the first and second scribe seal portion.

A semiconductor device includes passive electrical components in a substrate; and an interconnect structure over the passive electrical components, conductive features of the interconnect structure being electrically coupled to the passive electrical components. The conductive features of the interconnect structure includes a first conductive line over the substrate; a conductive bump over the first conductive line, where in a plan view, the conductive bumps has a first elongated shape and is entirely disposed within boundaries of the first conductive line; and a first via between the first conductive line and the conductive bump, the first via electrically connected to the first conductive line and the conductive bump, where in the plan view, the first via has a second elongated shape and is entirely disposed within boundaries of the conductive bump.

A semiconductor device includes a semiconductor substrate SUB, a semiconductor layer EP formed on the semiconductor substrate SUB, a buried layer PBL formed between the semiconductor layer EP and the semiconductor substrate SUB, an isolation layer PiSO formed in the semiconductor layer EP so as to be in contact with the buried layer PBL, and a conductive film FG formed over the isolation layer PiSO via an insulating film IF, whereby a first capacitive element including the conductive film FG as an upper electrode, the insulating film IF as a capacitive insulating film, and the isolation layer PiSO as a lower electrode, is formed over the semiconductor substrate SUB.

An IC includes a substrate including metal levels thereon including a top and bottom metal level with at least a transmit (Tx) circuit and receive (Rx) circuit each having 1 isolation capacitor and an inductor. A scribe seal around the IC includes a first portion around the Tx circuit and second portion around the Rx circuit, utilizing 2 of the metal levels including at least an outer metal stack. The Tx and Rx circuits are side-by-side along a direction that defines a length for the scribe seal. The outer metal stack includes a neck region between the scribe seal portions including a shorting structure including metal level(s) for shorting together the outer metal stack of the scribe seal portions. An optional routing pass-through isolated from the shorting structure includes other metal layers connecting through the neck region between node(s) within the first and second scribe seal portion.

The invention provides a semiconductor package and a method for fabricating a base for a semiconductor package. The semiconductor package includes a base. The base has a device-attach surface. A radio-frequency (RF) device is embedded in the base. The RF device is close to the device-attach surface.

An integrated circuit (IC) includes a capacitor array in at least one first back-end-of-line (BEOL) interconnect level. The capacitor array includes a pair of capacitor manifolds coupled to parallel capacitor routing traces and capacitors coupled between each pair of parallel capacitor routing traces. The IC also includes an inductor trace having at least one turn in at least one second BEOL interconnect level. The inductor trace defines a perimeter to overlap at least a portion of the capacitor array.

A method for manufacturing includes coating a substrate (22) with a matrix (28) containing a material to be patterned on the substrate. A pattern is fixed in the matrix by directing a pulsed energy beam to impinge on a locus of the pattern so as to cause adhesion of the material to the substrate along the pattern without fully sintering the material in the pattern. The matrix remaining on the substrate outside the fixed pattern is removed, and after removing the matrix, the material in the pattern is sintered.