The present disclosure provides a semiconductor device structure with a silicon-on-insulator (SOI) region and a method for forming the semiconductor device structure. The semiconductor device structure also includes a well region disposed in a semiconductor substrate, a first shallow trench isolation (STI) structure extending into the well region. The first STI structure comprises a first liner contacting the well region; a second liner covering the first liner and contacting the pad oxide layer and the pad nitride layer; a third liner covering the second liner, wherein the first liner, the second liner and the third liner are made of different materials; and a first trench filling layer disposed over the third liner and separated from the second liner by the third liner.

A method for manufacturing a semiconductor structure is provided, wherein the method includes the following operations. A substrate having a transistor is received, wherein the transistor includes a channel region and a gate on a first side of the channel region. A second side of the channel region of the transistor is exposed, wherein the second side is opposite to the first side. A metal oxide is formed on the second side of the channel region of the transistor, wherein the metal oxide contacts the channel region and is exposed to the environment. A semiconductor structure and an operation of a semiconductor structure thereof are also provided.

A method for manufacturing a semiconductor structure is provided, wherein the method includes the following operations. A substrate having a transistor is received, wherein the transistor includes a channel region and a gate on a first side of the channel region. A second side of the channel region of the transistor is exposed, wherein the second side is opposite to the first side. A metal oxide is formed on the second side of the channel region of the transistor, wherein the metal oxide contacts the channel region and is exposed to the environment. A semiconductor structure and an operation of a semiconductor structure thereof are also provided.

A gate driver device includes a first field effect transistor and a first driver circuit. The first field effect transistor includes a first gate electrode and a first backgate structure. The first driver circuit supplies a first backgate drive signal to the first backgate structure.

A gate driver device includes a first field effect transistor and a first driver circuit. The first field effect transistor includes a first gate electrode and a first backgate structure. The first driver circuit supplies a first backgate drive signal to the first backgate structure.

A semiconductor device includes a semiconductor body having an active area with active transistor cells. Each active transistor cell includes a columnar trench having a field plate and a mesa. An edge termination region that laterally surrounds the active area includes a transition region, an outer termination region, and inactive cells arranged in the transition region and outer termination region. Each inactive cell includes a columnar termination trench having a field plate and a termination mesa including a drift region. In the transition region, the termination mesa includes a body region arranged on the drift region and in the outer termination region the drift region of the termination mesa extends to the first surface. The edge termination region further includes a continuous trench positioned in the outer termination region, that laterally surrounds the columnar termination trenches, and is filled with at least one dielectric material.

Disclosed is an RF switch device and a method of manufacturing the same and, more particularly, an RF switch device and a method of manufacturing the same seeking to improve RF characteristics by forming a trap layer on a part of the surface of a substrate, thereby trapping carriers that may be on the surface of the substrate.

Structures for a photonics chip that include a fully-depleted silicon-on-insulator field-effect transistor and related methods. A first device region of a substrate includes a first device layer, a first portion of a second device layer, and a buried insulator layer separating the first device layer from the first portion of the second device layer. A second device region of the substrate includes a second portion of the second device layer. The first device layer, which has a thickness in a range of about 4 to about 20 nanometers, transitions in elevation to the second portion of the second device layer with a step height equal to a sum of the thicknesses of the first device layer and the buried insulator layer. A field-effect transistor includes a gate electrode on the top surface of the first device layer. An optical component includes the second portion of the second device layer.

The present disclosure relates to a semiconductor structure and a manufacturing method thereof. The manufacturing method of a semiconductor structure includes: providing a substrate, where a plurality of contact pads are formed on the substrate; depositing a dielectric layer on the substrate, where the dielectric layer fills gaps between the contact pads and covers the contact pads; and etching the dielectric layer through a plasma etching process to expose the contact pads, where an etching gas used in the plasma etching process includes an oxygen-free etching gas. The manufacturing method can avoid the formation of metal oxides on the contact pads, and avoid residual conductive metal particles or metal compounds on surfaces of the contact pads and the adjacent dielectric layers, which is beneficial to ensure the electrical performance of the semiconductor structure, thereby improving the use reliability of the semiconductor structure.

A semiconductor memory device including a substrate including an active pattern that includes a first source/drain region and a second source/drain region; an insulating layer on the substrate; a line structure on the insulating layer and extending in a first direction to cross the active pattern, the line structure penetrating the insulating layer on the first source/drain region and including a bit line electrically connected to the first source/drain region; and a contact spaced apart from the line structure and electrically connected to the second source/drain region, wherein the bit line includes a first portion vertically overlapped with the first source/drain region; and a second portion vertically overlapped with the insulating layer, and wherein a lowermost level of a top surface of the first portion of the bit line is at a level lower than a lowermost level of a top surface of the second portion of the bit line.