A device die including a first semiconductor die, a second semiconductor die, an anti-arcing layer and a first insulating encapsulant is provided. The second semiconductor die is stacked over and electrically connected to the first semiconductor die. The anti-arcing layer is in contact with the second semiconductor die. The first insulating encapsulant is disposed over the first semiconductor die and laterally encapsulates the second semiconductor die. Furthermore, methods for fabricating device dies are provided.

A semiconductor structure and a manufacturing method thereof are provided. The method includes the following steps. A plurality of conductive balls is placed over a circuit substrate, where each of the conductive balls is placed over a contact area of one of a plurality of contact pads that is accessibly revealed by a patterned mask layer. The conductive balls are reflowed to form a plurality of external terminals with varying heights connected to the contact pads of the circuit substrate, where a first external terminal of the external terminals formed in a first region of the circuit substrate and a second external terminal of the external terminals formed in a second region of the circuit substrate are non-coplanar.

In an embodiment, a method includes attaching a first package component to a first carrier, the first package component comprising: an aluminum pad disposed adjacent to a substrate; a sacrificial pad disposed adjacent to the substrate, the sacrificial pad comprising a major surface opposite the substrate, a protrusion of the sacrificial pad extending from the major surface; and a dielectric bond layer disposed around the aluminum pad and the sacrificial pad; attaching a second carrier to the first package component and the first carrier, the first package component being interposed between the first carrier and the second carrier; removing the first carrier; planarizing the dielectric bond layer to comprise a top surface being coplanar with the protrusion; and etching a portion of the protrusion.

An electronic circuit device according to the present invention includes a base substrate including a wiring layer having a connection part, at least one electronic circuit element, and a re-distribution layer including a photosensitive resin layer, the photosensitive resin layer enclosing a surface on which a connection part of the electronic circuit element is formed and a side surface of the electronic circuit element and embedding a first wiring photo via, a second wiring photo via and a wiring, the first wiring photo via directly connected to the connection part of the electronic circuit element, the second wiring photo via arranged at the outer periphery of the electronic circuit element and directly connected to a connection part of the wiring layer, the wiring electrically connected to the first wiring photo via and the second wiring photo via on a same surface.

A semiconductor package includes a first semiconductor chip including a first surface and a second surface, and including a first active layer on a portion adjacent to the first surface; a first redistribution structure on the first surface of the first semiconductor chip, wherein the first redistribution structure includes a first area and a second area next to the first area; a second semiconductor chip mounted in the first area of the first redistribution structure, including a third surface, which faces the first surface, and a fourth surface, and including a second active layer on a portion adjacent to the third surface; a conductive post mounted in the second area of the first redistribution structure; a molding layer at least partially surrounding the second semiconductor chip and the conductive post on the first redistribution structure; and a second redistribution structure disposed on the molding layer and connected to the conductive post.

A package includes at least one memory component and an insulating encapsulation. The at least one memory component includes a stacked memory structure and a plurality of conductive posts. The stacked memory structure is laterally encapsulated in a molding compound. The conductive posts are disposed on an upper surface of the stacked memory structure. The upper surface of the stacked memory structure is exposed from the molding compound. The insulating encapsulation encapsulates the at least one memory component. The top surfaces of the conductive posts are exposed form the insulating encapsulation. A material of the molding compound is different a material of the insulating encapsulation.

A semiconductor package includes: a first redistribution layer; a first semiconductor chip including a first side and a second side, wherein the first side faces the first redistribution layer; a first sealing material covering the second side of the first semiconductor chip and having a first filler content; a second sealing material formed on the first sealing material and having a second filler content lower than the first filler content; and a second redistribution layer disposed on the second sealing material.

Methods of forming bonded semiconductor structures include providing a first semiconductor structure including a device structure, bonding a second semiconductor structure to the first semiconductor structure below about 400° C., forming a through wafer interconnect through the second semiconductor structure and into the first semiconductor structure, and bonding a third semiconductor structure to the second semiconductor structure on a side thereof opposite the first semiconductor structure. In additional embodiments, a first semiconductor structure is provided. Ions are implanted into a second semiconductor structure. The second semiconductor structure is bonded to the first semiconductor structure. The second semiconductor structure is fractured along an ion implant plane, a through wafer interconnect is formed at least partially through the first and second semiconductor structures, and a third semiconductor structure is bonded to the second semiconductor structure on a side thereof opposite the first semiconductor structure. Bonded semiconductor structures are formed using such methods.

Semiconductor packages may include a molded interposer and semiconductor dice mounted on the molded interposer. The molded interposer may include two redistribution layer structures on opposite sides of a molding compound. Electrically conductive vias may connect the RDL structures through the molding compound, and passive devices may be embedded in the molding compound and electrically connected to one of the RDL structures. Each of the semiconductor dice may be electrically connected to, and have a footprint covering, a corresponding one of the passive devices to form a face-to-face connection between each of the semiconductor dice and the corresponding one of the passive devices.

A fabricating method of a semiconductor device is provided. A temporary semiconductor structure is provided. The temporary semiconductor structure includes a temporary substrate and a conductive layer, the temporary substrate has a first surface, the conductive layer is disposed on the first surface of the temporary substrate, and the conductive layer includes one or more first trace. Then, a recess is formed in the temporary semiconductor structure to form a first semiconductor structure and a first substrate. The recess penetrates through the first substrate and expose the one or more first trace. Thereafter, an input/output pad is formed in the recess and on the one or more first trace.