An electronic device includes a multilevel package substrate with first, second, third, and fourth levels, a semiconductor die mounted to the first level, and a conductor backed coplanar waveguide transmission line feed with an interconnect and a conductor, the interconnect including coplanar first, second, and third conductive lines extending in the first level along a first direction from respective ends to an antenna, the second and third conductive lines spaced apart from opposite sides of the first conductive line along an orthogonal second direction, and the conductor extending in the third level under the interconnect and under the antenna.

In one example, an apparatus comprises: a first metal layer including a first segment and a second segment, in which the first segment is electrically coupled to a single-ended signal terminal, the second segment has a disconnected end; a second metal layer including a third segment and a fourth segment, in which the third segment is magnetically coupled to the first segment, the fourth segment is magnetically coupled to the second segment, a first end of the third segment and a first end of the fourth segment are electrically coupled at a center tap, and a second end of the third segment and a second end of the fourth segment are electrically coupled to respective first and second signal terminals of a pair of differential signal terminals; and a phase adjustment device proximate the center tap and electrically coupled to a second voltage reference terminal.

A ceramic encapsulating casing and a mounting structure thereof are provided. The ceramic encapsulating casing includes a ceramic substrate, a ceramic insulator, a cover plate and a pad structure. The ceramic substrate is provided with a cavity with an upward opening. The ceramic insulator is disposed on the ceramic substrate and provided with a radio frequency transmission structure. The pad structure is arranged on a bottom surface of the ceramic substrate. and includes a plurality of second pads that are arranged for transmitting signals and arranged in an array manner. A plurality of solder balls are attached to the plurality of second pads in one-to-one correspondence.

The present invention relates to the field of integrating electronic systems that operate at mm-wave and THz frequencies. A monolithic multichip package, a carrier structure for such a package as well as manufacturing methods for manufacturing such a package and such a carrier structure are proposed to obtain a package that fully shields different functions of the mm-wave/THz system. The package is poured into place by polymerizing photo sensitive monomers. It gradually grows around and above the MMICs (Monolithically Microwave Integrated Circuit) making connection to the MMICs but recessing the high frequency areas of the chip. The proposed approach leads to functional blocks that are electromagnetically completely shielded. These units can be combined and cascaded according to system needs.

A method of forming a semiconductor structure is provided. A first inter-level dielectric (ILD) layer is formed overlying a molding layer. The first ILD layer is patterned to form a plurality of first openings. A first lower transmitter electrode and a first lower receiver electrode are formed by depositing a first metal material within the plurality of first openings. A first dielectric waveguide is formed overlying the first ILD layer, the first lower transmitter electrode and the first lower receiver electrode. A second ILD layer is formed overlying the first dielectric waveguide and includes a plurality of second openings. A second lower transmitter electrode and a second lower receiver electrode are formed by depositing a second metal material within the plurality of second openings. A second dielectric waveguide is formed overlying the second ILD layer, the second lower transmitter electrode and the second lower receiver electrode.

Provided is a microwave integrated circuit including: a semiconductor substrate; a plurality of amplification units that are formed in the semiconductor substrate; a wiring that is formed in one layer wiring excluding an uppermost layer wiring and a lowermost layer wiring among a plurality of layer wirings formed on the semiconductor substrate and is used for supplying power to the plurality of amplification units; and a plurality of vias that connect a plurality of conductive regions formed in the layer wiring with the wiring interposed therebetween and other conductive regions formed in a region interposing the wiring in the two layer wirings immediately above and immediately below the layer wiring, in which each of the plurality of vias forms a via structure connected to the conductive regions of the lowermost layer wiring by a plurality of other vias.

A display device including a pixel circuit, an insulation layer covering the pixel circuit, an etching prevention layer disposed on the insulation layer, a first guide layer, a second guide layer, a first electrode, a second electrode, and a light emitting element. The first guide layer and the second guide layer may be disposed on the etching prevention layer and spaced apart from each other. The first electrode may be disposed on the first guide layer and electrically connected to the pixel circuit. The second electrode may be disposed on the first guide layer and insulated from the first electrode. The light emitting element may be in contact with the top surface of the etching prevention layer, disposed between the first guide layer and the second guide layer on a plane, and electrically connected to the first electrode and the second electrode.

Disclosed herein is a semiconductor device including: a semiconductor circuit element configured to process an electrical signal having a predetermined frequency; and a transmission line configured to be connected to the semiconductor circuit element via a wire and transmit the electrical signal. An impedance matching pattern having a symmetric shape with respect to a direction of the transmission line is provided in the transmission line.

A semiconductor device comprises a substrate having a first surface and a second surface opposite the first surface, at least one connection element arranged on the first surface of the substrate to electrically and mechanically connect the substrate to a printed circuit board, and a radar semiconductor chip arranged on the first surface of the substrate.

A method of forming a semiconductor structure includes: providing a first inter-level dielectric (ILD) layer overlying a molding layer, the molding layer including a transmitter ground structure and a receiver ground structure; forming first openings through the first ILD layer to expose the transmitter and receiver ground structures; forming first lower transmitter and receiver electrodes in the first openings to be respectively coupled to the transmitter and receiver ground structures; forming a first dielectric waveguide overlying the first ILD layer, and first lower transmitter and receiver electrodes; depositing a second ILD layer overlying the first dielectric waveguide; forming second lower transmitter and receiver electrodes extending through the second ILD and respectively coupled to the transmitter and receiver ground structures; and forming a second dielectric waveguide overlying the second ILD layer and the second lower transmitter and receiver electrodes.