A method for bonding two superconducting integrated circuits (“chips”), such that the bonds electrically interconnect the chips. A plurality of indium-coated metallic posts may be deposited on each chip. The indium bumps are aligned and compressed with moderate pressure at a temperature at which the indium is deformable but not molten, forming fully superconducting connections between the two chips when the indium is cooled down to the superconducting state. An anti-diffusion layer may be applied below the indium bumps to block reaction with underlying layers. The method is scalable to a large number of small contacts on the wafer scale, and may be used to manufacture a multi-chip module comprising a plurality of chips on a common carrier. Superconducting classical and quantum computers and superconducting sensor arrays may be packaged.

Disclosed is a semiconductor package comprising a substrate that includes a plurality of substrate pads on a top surface of the substrate, a first semiconductor chip on the substrate, a second semiconductor chip on the first semiconductor chip, and a plurality of first bonding wires on a top surface of the first semiconductor chip and coupled to the substrate pads. The first semiconductor chip includes a first lower signal pad, a second lower signal pad laterally spaced apart from the first lower signal pad, and a lower signal redistribution pattern electrically connected to the first lower signal pad and the second lower signal pad. One of the first bonding wires is coupled to the first lower signal pad. Any of the first bonding wires is not on a top surface of the second lower signal pad.

A semiconductor device includes: a first semiconductor chip; plural redistribution lines provided on a main face of the first semiconductor chip, the plural redistribution lines including a redistribution line that includes a first land and a redistribution line that includes a second land; a first electrode provided within the first land, one end of the first electrode being connected to the first land, and another end of the first electrode being connected to an external connection terminal; and a second electrode provided within the second land, one end of the second electrode being connected to the second land, wherein a shortest distance between an outer edge of the second land and an outer edge of the second electrode, is less than, a shortest distance between an outer edge of the first land and an outer edge of the first electrode.

A light emitting device according to an embodiment of the present disclosure includes multiple light emitting elements. The light emitting elements each include a semiconductor layer including a first conductive layer, a light emitting layer, and a second conductive layer that are stacked in this order. The first conductive layer has a light emitting surface. The light emitting elements further includes a first electrode in contact with the second conductive layer, and a second electrode in contact with the first conductive layer. The light emitting elements share the first conductive layer and the second electrode with each other. The light emitting elements each include a current path in the first conductive layer from a portion opposed to the first electrode to a portion opposed to the second electrode. The first conductive layer has one or multiple trenches in a region between two current paths adjacent to each other. The light emitting device further includes a light blocking section provided in the one or multiple trenches.

A driving backplane, a transfer method for a light-emitting diode chip (21), and a display apparatus. The driving backplane comprises: a base substrate (10), a driving circuit, a plurality of electromagnetic structures (13), and a plurality of contact electrodes (12). The plurality of electromagnetic structures (13) in the driving backplane are symmetrically arranged relative to a first straight line (L1) and a second straight line (L2). A current signal can be applied to each electromagnetic structure (13) by means of the driving circuit. Stress generated by a transfer carrier plate (20) according to the magnetic force of each electromagnetic structure (13) moves the transfer carrier plate (20). When the transfer carrier plate (20) is stress balanced in each direction parallel to the surface of the transfer carrier plate (20), the light-emitting diode chip (21) is precisely aligned to corresponding contact electrodes (12).

A semiconductor package includes: a first structure having a first insulating layer disposed on one surface, and first electrode pads and first dummy pads penetrating through the first insulating layer, a second structure having a second insulating layer having the other surface bonded to the one surface and the first insulating layer and disposed on the other surface, and second electrode pads and second dummy pads that penetrate through the second insulating layer, the second electrode pads being bonded to the first electrode pads, respectively, and the second dummy pads being bonded to the first dummy pads, respectively. In the semiconductor chip, ratios of surface areas per unit area of the first and second dummy pads to the first and second insulating layers on the one surface and the other surface gradually decrease toward sides of the first and second structures.

Representative implementations of techniques and methods include chemical mechanical polishing for hybrid bonding. The disclosed methods include depositing and patterning a dielectric layer on a substrate to form openings in the dielectric layer, depositing a barrier layer over the dielectric layer and within a first portion of the openings, and depositing a conductive structure over the barrier layer and within a second portion of the openings not occupied by the barrier layer, at least a portion of the conductive structure in the second portion of the openings coupled or contacting electrical circuitry within the substrate. Additionally, the conductive structure is polished to reveal portions of the barrier layer deposited over the dielectric layer and not in the second portion of the openings. Further, the barrier layer is polished with a selective polish to reveal a bonding surface on or at the dielectric layer.

Representative implementations of techniques and devices are used to reduce or prevent conductive material diffusion into insulating or dielectric material of bonded substrates. Misaligned conductive structures can come into direct contact with a dielectric portion of the substrates due to overlap, especially while employing direct bonding techniques. A barrier interface that can inhibit the diffusion is disposed generally between the conductive material and the dielectric at the overlap.

The present invention provides a test pad structure of chip, which comprises a plurality of first internal test pads, a plurality of second internal test pads, a plurality of first extended test pads, and a plurality of second extended test pads. The first internal test pads and the second internal test pads are disposed in a chip. The second internal test pads and the first internal test pads are spaced by a distance. The first extended test pads are connected with the first internal test pads. The second extended test pads are connected with the second internal test pads. The first extended test pads and the second extended test pads may increase the contact area to be contacted by probes. Signals or power are transmitted to the first internal test pads and the second internal test pads via the first extended test pads and the second extended test pads for the probes to test the chip.

A multi-chip module includes a first Integrated Circuit (IC) die a second IC die. The first IC die includes an array of first bond pads, a plurality of first code group circuits, and first interleaved interconnections between the plurality of first code group circuits and the array of first bond pads, the first interleaved interconnections including a first interleaving pattern causing data from different code group circuits to be coupled to adjacent first bond pads. The second IC die includes a second array of bond pads that electrically couple to the array of first bond pads, a plurality of second code group circuits, and second interleaved interconnections between the plurality of second code group circuits and the array of second bond pads, the second interleaved interconnections including a second interleaving pattern causing data from different code groups to be coupled to adjacent second bond pads.