An electronic device has a display substrate including a display area, a driver area, and a fan-out area. The fan-out area has interconnects that provide electrical accesses to display elements on the display area. A driver chip is disposed on the driver area and includes a first edge adjacent to the display area, two side edges connected to the first edge, and a plurality of pad groups. Each pad group includes a row of electronic pads that are electrically coupled to a subset of display elements via a subset of interconnects routed on the fan-out area. The pad groups include a first pad group and a second pad group disposed immediately adjacent to the first pad group. A first subset of interconnects cross one of the two side edges, and extend above a gap between rows of the first and second pad groups to reach the first pad group.

According to one embodiment, a magnetic memory device includes a magnetic memory chip having a magnetoresistive element, a magnetic layer having first and second portions spacing out each other, the first portion covering a first main surface of the magnetic memory chip, the second portion covering a second main surface facing the first main surface of the magnetic memory chip, a circuit board on which the magnetic layer is mounted, and a bonding wire connecting between the magnetic memory chip and the circuit board in a first direction parallel to the first and second main surfaces.

A sensor device comprising: a lead frame; a first/second semiconductor die having a first/second sensor structure at a first/second sensor location, and a plurality of first/second bond pads electrically connected to the lead frame; the semiconductor dies having a square or rectangular shape with a geometric center; the sensor locations are offset from the geometrical centers; the second die is stacked on top of the first die, and is rotated by a non-zero angle and optionally also offset or shifted with respect to the first die, such that a perpendicular projection of the first and second sensor location coincide.

Memory devices are disclosed. A memory device may include a command and address (CA) interface region including a first CA input circuit configured to generate a first CA output AND a second CA input circuit configured to generate a second CA output. The first CA input circuit and the second CA input circuit are arranged in a mirror relationship. The CA interface region further includes a swap circuit configured to select one of the first CA output and the second CA output for a first internal CA signal and select the other of the first CA output and the second CA output for a second internal CA signal. Memory systems and systems are also disclosed.

A sensor package structure is provided and includes a substrate, a sensor chip, a ring-shaped supporting layer, and a light-permeable sheet. The sensor chip is disposed on and electrically coupled to the substrate. The ring-shaped supporting layer is disposed on the sensor chip and surrounds a sensing region of the sensor chip. The light-permeable sheet has a ring-shaped notch recessed in a peripheral edge of an inner surface of the light-permeable sheet, and a depth of the ring-shaped notch with respect to the inner surface is at least 10 tim. The light-permeable sheet is disposed on the ring-shaped supporting layer through the ring-shaped notch, and the inner surface is not in contact with the ring-shaped supporting layer, so that the inner surface of the light-permeable sheet, an inner side of the ring-shaped supporting layer, and the top surface of the sensor chip jointly define an enclosed space.

In a method of manufacturing a semiconductor device first conductive layers are formed over a substrate. A first photoresist layer is formed over the first conductive layers. The first conductive layers are etched by using the first photoresist layer as an etching mask, to form an island pattern of the first conductive layers separated from a bus bar pattern of the first conductive layers by a ring shape groove. A connection pattern is formed to connect the island pattern and the bus bar pattern. A second photoresist layer is formed over the first conductive layers and the connection pattern. The second photoresist layer includes an opening over the island pattern. Second conductive layers are formed on the island pattern in the opening. The second photoresist layer is removed, and the connection pattern is removed, thereby forming a bump structure.

A semiconductor device includes a semiconductor substrate having a first surface and a second surface opposing each other, a plurality of semiconductor elements disposed on the first surface in a device region, an insulating protective layer, and a connection pad. The second surface is divided into a first region overlapping the device region, and a second region surrounding the first region. The insulating protective layer is disposed on the second surface of the semiconductor substrate, and includes an edge pattern positioned in the second region. The edge pattern includes a thinner portion having a thickness smaller than a thickness of a center portion of the insulating protective layer positioned in the first region and/or an open region exposing the second surface of the semiconductor substrate. The connection pad is disposed on the center portion of the insulating protective layer and is electrically connected to the semiconductor elements.

A packaging structure, a method for manufacturing the same and a semiconductor device are provided. The packaging structure includes a redistribution layer electrically connected with an interconnection layer of a semiconductor functional structure, and an insulating layer covering and exposing part of the redistribution layer. The exposed part of the redistribution layer includes at least one first pad. The first pad includes a first area and a second area arranged continuously. The first area is configured for testing. The second area is configured for performing functional interaction corresponding to content of the test.

A semiconductor structure including chips is provided. The chips are arranged in a stack. Each of the chips includes a radio frequency (RF) device. Two adjacent chips are bonded to each other. The RF devices in the chips are connected in parallel. Each of the RF devices includes a gate, a source region, and a drain region. The gates in the RF devices connected in parallel have the same shape and the same size. The source regions in the RF devices connected in parallel have the same shape and the same size. The drain regions in the RF devices connected in parallel have the same shape and the same size.

A semiconductor package includes a first lead with first and second ends extending in the same direction as one another. At least one second lead has first and second ends and is partially surrounded by the first lead. A die pad is provided and a die is connected to the die pad. Wires electrically connect the die to the first lead and the at least one second lead. An insulating layer extends over the leads, the die pad, and the die such that the first end of the at least one second lead is exposed from the semiconductor package and the second end of the first lead is encapsulated entirely within the insulating layer.