A semiconductor package comprises a first die having a central region and a peripheral region that surrounds the central region; a plurality of through electrodes that penetrate the first die; a plurality of first pads at a top surface of the first die and coupled to the through electrodes; a second die on the first die; a plurality of second pads at a bottom surface of the second die, the bottom surface of the second die facing the top surface of the first die; a plurality of connection terminals that connect the first pads to the second pads; and a dielectric layer that fills a space between the first die and the second die and surrounds the connection terminals. A first width of each of the first pads in the central region may be greater than a second width of each of the first pads in the peripheral region. Each of the connection terminals may include a convex portion at a lateral surface thereof, which protrudes beyond a lateral surface of a respective first pad and a lateral surface of a respective second pad. The convex portion may protrude in a direction away from a center of the first die. Protruding distances of the convex portions may increase in a direction from the center of the first die toward an outside of the first die.

Layouts for data pads on a semiconductor die are disclosed. An apparatus may include circuits, a first edge, a second edge perpendicular to the first edge, a third edge opposite the first edge, and a fourth edge opposite the second edge. The apparatus may also include data pads variously electrically coupled to the circuits. The data pads may include a data pad positioned a first distance from the first edge and a second distance from the second edge. The apparatus may also include dummy data pads electrically isolated from the circuits. The dummy data pads may include a dummy data pad positioned substantially the first distance from the first edge and substantially the second distance from the fourth edge. Associated systems and methods are also disclosed.

A semiconductor package includes a lower semiconductor chip, a first upper semiconductor chip including upper pads, and bonding wires coupled to the substrate and the upper pads. The first upper semiconductor chip has a first overhang region adjacent to a first lateral surface of the first upper semiconductor chip, a second overhang region adjacent to a second lateral surface of the first upper semiconductor chip, and a first corner overhang region adjacent to a corner where the first and second lateral surfaces meet with each other. The upper pads include first upper pads on the first overhang region and second upper pads on the second overhang region. The number of the first upper pads is less than that of the second upper pads. The upper pads are spaced apart from the first corner overhang region.

Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises semiconductor chips stacked on a substrate and including first and second pads on top surfaces thereof, and bonding wires connecting the first and second pads to the substrate. The semiconductor chips alternately protrude in a first direction and its opposite direction. The semiconductor chip has a first lateral surface spaced apart from another semiconductor chip. The top surface of the semiconductor chip is provided thereon with a first arrangement line extending along the first lateral surface and with second arrangement lines extending from opposite ends of the first arrangement line. Wherein as a distance between the first and second arrangement lines increases, a distance between the second arrangement lines and the first lateral surface increases. The first pads are arranged along the first arrangement line. The second pads are arranged along the second arrangement lines.

A three-dimensional integrated circuit includes a first die structure having a first geometry. The first die structure includes a first region that operates with a first power density and a second region that operates with a second power density. The first power density is less than the second power density. The three-dimensional integrated circuit includes a second die structure having a second geometry. A stacked portion of the second die structure is aligned with the first region. The three-dimensional integrated circuit includes an additional die structure stacked with the first die structure and the second die structure. The additional die structure has the first geometry or the second geometry.

A method for manufacturing a three-dimensional integrated circuit includes attaching a first side of a first die to a first carrier wafer. The method includes preparing a second side of the first die to generate a prepared second side of the first die. The method includes attaching the prepared second side of the first die to a second carrier wafer. The method includes removing the first carrier wafer from the first side of the first die to form a transitional three-dimensional integrated circuit. The method includes attaching a third carrier wafer to a first side of the transitional three-dimensional integrated circuit. The method includes attaching a first side of the second die to a second side of the transitional three-dimensional integrated circuit.

An alignment carrier, assembly and methods that enable the precise alignment and assembly of two or more semiconductor die using an interconnect bridge. The alignment carrier includes a substrate composed of a material that has a coefficient of thermal expansion that substantially matches that of an interconnect bridge. The alignment carrier further includes a plurality of solder balls located on the substrate and configured for alignment of two or more semiconductor die.

An alignment carrier, assembly and methods that enable the precise alignment and assembly of two or more semiconductor die using an interconnect bridge. The alignment carrier includes a substrate composed of a material that has a coefficient of thermal expansion that substantially matches that of an interconnect bridge. The alignment carrier further includes a plurality of solder balls located on the substrate and configured for alignment of two or more semiconductor die.

According to an embodiment, a semiconductor device includes a first chip including a substrate, and a second chip bonded to the first chip at a first surface. Each of the first chip and the second chip includes an element region, and an end region including a chip end portion. The first chip includes a plurality of first electrodes that are arranged on the first surface in the end region and are in an electrically uncoupled state. The second chip includes a plurality of second electrodes that are arranged on the first surface in the end region, are in an electrically uncoupled state, and are respectively in contact with the first electrodes.

A three-dimensional integrated circuit includes a first die structure having a first geometry. The first die structure includes a first region that operates with a first power density and a second region that operates with a second power density. The first power density is less than the second power density. The three-dimensional integrated circuit includes a second die structure having a second geometry. A stacked portion of the second die structure is aligned with the first region. The three-dimensional integrated circuit includes an additional die structure stacked with the first die structure and the second die structure. The additional die structure has the first geometry or the second geometry.