Patent classifications
H01L2224/10152
All intermetallic compound with stand off feature and method to make
A standoff structure for providing improved interconnects is provided, wherein the structure employs nickel copper alloy or copper structures having increased resistivity.
MAGNETIC INDUCED HEATING FOR SOLDER INTERCONNECTS
Magnetic structures may be incorporated into integrated circuit assemblies, which will enable local heating and reflow of solder interconnects for the attachment of integrated circuit devices to electronic substrates. Such magnetic structures will eliminate exposure of the entire integrated circuit assembly to elevated temperatures for an extended period of time, which eliminates associated warpage and thermal degradation consequences from such exposure. Additionally, such magnetic structures will allow for re-workability of specific solder interconnects.
Method for fabricating multiplexed hollow waveguides of variable type on a semiconductor package
Embodiments include semiconductor packages and method of forming the semiconductor packages. A semiconductor package includes first waveguides over a package substrate. The first waveguides include first angled conductive layers, first transmission lines, and first cavities. The semiconductor package also includes a first dielectric over the first waveguides and package substrate, second waveguides over the first dielectric and first waveguides, and a second dielectric over the second waveguides and first dielectric. The second waveguides include second angled conductive layers, second transmission lines, and second cavities. The first angled conductive layers are positioned over the first transmission lines and package substrate having a first pattern of first triangular structures. The second angled conductive layers are positioned over the second transmission lines and first dielectric having a second pattern of second triangular structures, where the second pattern is shaped as a coaxial interconnects enclosed with second triangular structures and portions of first dielectric.
Corner guard for improved electroplated first level interconnect bump height range
Embodiments disclosed herein include electronic packages and methods of forming such packages. In an embodiment an electronic package comprises a package substrate, and a first level interconnect (FLI) bump region on the package substrate. In an embodiment, the FLI bump region comprises a plurality of pads, and a plurality of bumps, where each bump is over a different one of the plurality of pads. In an embodiment, the electronic package further comprises a guard feature adjacent to the FLI bump region. In an embodiment, the guard feature comprises, a guard pad, and a guard bump over the guard pad, wherein the guard feature is electrically isolated from circuitry of the electronic package.
Corner guard for improved electroplated first level interconnect bump height range
Embodiments disclosed herein include electronic packages and methods of forming such packages. In an embodiment an electronic package comprises a package substrate, and a first level interconnect (FLI) bump region on the package substrate. In an embodiment, the FLI bump region comprises a plurality of pads, and a plurality of bumps, where each bump is over a different one of the plurality of pads. In an embodiment, the electronic package further comprises a guard feature adjacent to the FLI bump region. In an embodiment, the guard feature comprises, a guard pad, and a guard bump over the guard pad, wherein the guard feature is electrically isolated from circuitry of the electronic package.
Package with conductive underfill ground plane
Embodiments for a packaged semiconductor device and methods of making are provided herein, which includes a packaged semiconductor device including: a semiconductor die; a carrier; a plurality of electrical connections formed between the semiconductor die and the carrier; an electrical isolation layer that covers an outer surface of each of the plurality of electrical connections; and a conductive underfill structure between the semiconductor die and the carrier, and surrounding each of the plurality of electrical connections, wherein the electrical isolation layer electrically isolates each electrical connection from the conductive underfill structure.
Chip package structure
A chip package structure, comprises a first chip having a plurality of first chip joints at a lower side thereof; a circuit board below the first chip; an upper side of the circuit board being arranged with a plurality of circuit board joints; in packaging, the first chip joints being combined with the circuit board joints of the circuit board so that the first chip is combined to the circuit board by a way of ACF combination or convex joint combination; and wherein in the ACF combination, ACFs are used as welding points to be combined to the pads at another end so that the chip is combined to the circuit board; and wherein in the convex pad combination, a convex pad is combined with a flat pad by chemically methods or physical methods; and these pads are arranged on the circuit board and the first chip.
Chip package structure
A chip package structure, comprises a first chip having a plurality of first chip joints at a lower side thereof; a circuit board below the first chip; an upper side of the circuit board being arranged with a plurality of circuit board joints; in packaging, the first chip joints being combined with the circuit board joints of the circuit board so that the first chip is combined to the circuit board by a way of ACF combination or convex joint combination; and wherein in the ACF combination, ACFs are used as welding points to be combined to the pads at another end so that the chip is combined to the circuit board; and wherein in the convex pad combination, a convex pad is combined with a flat pad by chemically methods or physical methods; and these pads are arranged on the circuit board and the first chip.
Bump-forming film, semiconductor device and manufacturing method thereof, and connection structure
A bump-forming film is used for forming, on a semiconductor device such as a bumpless IC chip, bumps which are low in cost and can achieve stable conduction reliability. The bump-forming film is configured such that conductive fillers for bumps are arranged regularly in a planar view in an insulating adhesive resin layer. The regular arrangement has a periodic repeating unit in the longitudinal direction of the film. The straight line which connects one ends of the conductive fillers for bumps in the thickness direction of the film is substantially parallel to the surface of the film.
Chip package structure
A chip package structure, comprises a first chip having a plurality of first chip joints at a lower side thereof; a circuit board below the first chip; an upper side of the circuit board being arranged with a plurality of circuit board joints; in packaging, the first chip joints being combined with the circuit board joints of the circuit board so that the first chip is combined to the circuit board by a way of ACF combination or convex joint combination; and wherein in the ACF combination, ACFs are used as welding points to be combined to the pads at another end so that the chip is combined to the circuit board; and wherein in the convex pad combination, a convex pad is combined with a flat pad by chemically methods or physical methods; and these pads are arranged on the circuit board and the first chip.