Semiconductor devices and methods of manufacture are provided. In embodiments the semiconductor device includes a substrate, a first interposer bonded to the substrate, a second interposer bonded to the substrate, a bridge component electrically connecting the first interposer to the second interposer, two or more first dies bonded to the first interposer; and two or more second dies bonded to the second interposer.

A microelectronic device has bump bond structures on input/output (I/O) pads. The bump bond structures include copper-containing pillars, a barrier layer including cobalt and zinc on the copper-containing pillars, and tin-containing solder on the barrier layer. The barrier layer includes 0.1 weight percent to 50 weight percent cobalt and an amount of zinc equivalent to a layer of pure zinc 0.05 microns to 0.5 microns thick. A lead frame has a copper-containing member with a similar barrier layer in an area for a solder joint. Methods of forming the microelectronic device are disclosed.

A microelectronic device has bump bond structures on input/output (I/O) pads. The bump bond structures include copper-containing pillars, a barrier layer including cobalt and zinc on the copper-containing pillars, and tin-containing solder on the barrier layer. The barrier layer includes 0.1 weight percent to 50 weight percent cobalt and an amount of zinc equivalent to a layer of pure zinc 0.05 microns to 0.5 microns thick. A lead frame has a copper-containing member with a similar barrier layer in an area for a solder joint. Methods of forming the microelectronic device are disclosed.

A method for circuit fabrication includes defining a solder bump, including a specified solder material and having a specified bump volume, to be formed at a target location on an acceptor substrate. A transparent donor substrate, having a donor film including the specified solder material, is positioned such that the donor film is in proximity to the target location on the acceptor substrate. A sequence of pulses of laser radiation is directed to pass through the first surface of the donor substrate and impinge on the donor film so as to induce ejection from the donor film onto the target location on the acceptor substrate of a number of molten droplets of the solder material such that the droplets deposited at the target location cumulatively reach the specified bump volume. The target location is heated so the deposited droplets melt and reflow to form the solder bump.

In one example, a semiconductor device structure relates to an electronic device, which includes a device top surface, a device bottom surface opposite to the device top surface, device side surfaces extending between the device top surface and the device bottom surface, and pads disposed over the device top surface. Interconnects are connected to the pads, and the interconnects first regions that each extend from a respective pad in in an upward direction, and second regions each connected to a respective first region, wherein each second region extends from the respective first region in a lateral direction. The interconnects comprise a redistribution pattern on the pads. Other examples and related methods are also disclosed herein.

A micronozzle assembly, comprising a reservoir, an array of structures comprising micronozzles, a porous structure positioned between the reservoir and the array, and an electrode within the reservoir, wherein the electrode comprises any of a mesh, a frame along the perimeter of the cavity of the reservoir, or a rod extending into a cavity of the reservoir.

A micronozzle assembly, comprising a reservoir, an array of structures comprising micronozzles, a porous structure positioned between the reservoir and the array, and an electrode within the reservoir, wherein the electrode comprises any of a mesh, a frame along the perimeter of the cavity of the reservoir, or a rod extending into a cavity of the reservoir.

Semiconductor devices and methods of manufacture are provided. In embodiments the semiconductor device includes a substrate, a first interposer bonded to the substrate, a second interposer bonded to the substrate, a bridge component electrically connecting the first interposer to the second interposer, two or more first dies bonded to the first interposer; and two or more second dies bonded to the second interposer.

A method for circuit fabrication includes defining a solder bump, including a specified solder material and having a specified bump volume, to be formed at a target location on an acceptor substrate. A transparent donor substrate, having a donor film including the specified solder material, is positioned such that the donor film is in proximity to the target location on the acceptor substrate. A sequence of pulses of laser radiation is directed to pass through the first surface of the donor substrate and impinge on the donor film so as to induce ejection from the donor film onto the target location on the acceptor substrate of a number of molten droplets of the solder material such that the droplets deposited at the target location cumulatively reach the specified bump volume. The target location is heated so the deposited droplets melt and reflow to form the solder bump.

A microelectronic device has bump bond structures on input/output (I/O) pads. The bump bond structures include copper-containing pillars, a barrier layer including cobalt and zinc on the copper-containing pillars, and tin-containing solder on the barrier layer. The barrier layer includes 0.1 weight percent to 50 weight percent cobalt and an amount of zinc equivalent to a layer of pure zinc 0.05 microns to 0.5 microns thick. A lead frame has a copper-containing member with a similar barrier layer in an area for a solder joint. Methods of forming the microelectronic device are disclosed.