The known electrolytic plating method is disadvantageous in that it is difficult to form thin pillars without being influenced by undercuts. The electroless plating method is disadvantageous in that it is difficult to form pillars in the same shape without voids. As a solution to these, the electrically conductive paste according to the present invention for forming pillars is used to make pillars by filling. This helps prevent undercuts, and it is also intended to provide metal pillars in the same shape with good reproducibility. The inventors found that an electrically conductive paste that is very small fine metal particles and contains a particular percentage of fine metal particles is extraordinarily advantageous in forming pillars.

The known electrolytic plating method is disadvantageous in that it is difficult to form thin pillars without being influenced by undercuts. The electroless plating method is disadvantageous in that it is difficult to form pillars in the same shape without voids. As a solution to these, the electrically conductive paste according to the present invention for forming pillars is used to make pillars by filling. This helps prevent undercuts, and it is also intended to provide metal pillars in the same shape with good reproducibility. The inventors found that an electrically conductive paste that is very small fine metal particles and contains a particular percentage of fine metal particles is extraordinarily advantageous in forming pillars.

A semiconductor package device includes a carrier, a first electronic component, and a conductive element on the carrier. The first electronic component is over the carrier. The conductive element is on the carrier and electrically connects the first electronic component to the carrier. The conductive element includes at least one conductive particle and a solder material covering the conductive particle, and the conductive particle includes a metal core, a barrier layer covering the metal core, and a metal layer covering the barrier layer.

A semiconductor package device includes a carrier, a first electronic component, and a conductive element on the carrier. The first electronic component is over the carrier. The conductive element is on the carrier and electrically connects the first electronic component to the carrier. The conductive element includes at least one conductive particle and a solder material covering the conductive particle, and the conductive particle includes a metal core, a barrier layer covering the metal core, and a metal layer covering the barrier layer.

Embodiments herein may relate to an apparatus with a package that includes a first substrate soldered to a second substrate via solder comprising an off-eutectic solder material. The off-eutectic solder material may form a joint between the first substrate and the second substrate. The off-eutectic solder material may be any suitable material that melts over a range of temperatures, which may provide a relatively slow collapse of the off-eutectic solder material during a melting process. The relatively slow collapse may provide a sufficient amount of time for gases to escape prior to collapse, and thus, the joint between the first substrate and the second substrate may have less voids compared to joints formed using eutectic solder materials. Other embodiments may be described and/or claimed.

Embodiments herein may relate to an apparatus with a package that includes a first substrate soldered to a second substrate via solder comprising an off-eutectic solder material. The off-eutectic solder material may form a joint between the first substrate and the second substrate. The off-eutectic solder material may be any suitable material that melts over a range of temperatures, which may provide a relatively slow collapse of the off-eutectic solder material during a melting process. The relatively slow collapse may provide a sufficient amount of time for gases to escape prior to collapse, and thus, the joint between the first substrate and the second substrate may have less voids compared to joints formed using eutectic solder materials. Other embodiments may be described and/or claimed.

A semiconductor package device includes a carrier, a first electronic component, and a conductive element on the carrier. The first electronic component is over the carrier. The conductive element is on the carrier and electrically connects the first electronic component to the carrier. The conductive element includes at least one conductive particle and a solder material covering the conductive particle, and the conductive particle includes a metal core, a barrier layer covering the metal core, and a metal layer covering the barrier layer.

A semiconductor package device includes a carrier, a first electronic component, and a conductive element on the carrier. The first electronic component is over the carrier. The conductive element is on the carrier and electrically connects the first electronic component to the carrier. The conductive element includes at least one conductive particle and a solder material covering the conductive particle, and the conductive particle includes a metal core, a barrier layer covering the metal core, and a metal layer covering the barrier layer.

Produced is a metal ball which suppresses an emitted dose. Contained are the steps of melting a pure metal by heating the pure metal at a temperature which is higher than a boiling point of an impurity to be removed, higher than a melting point of the pure metal, and lower than a boiling point of the pure metal, the pure metal containing a U content of 5 ppb or less, a Th content of 5 ppb or less, purity of 99.9% or more and 99.995% or less, and a Pb or Bi content or a total content of Pb and Bi of 1 ppm or more, and the pure metal having the boiling point higher than the boiling point at atmospheric pressure of the impurity to be removed; and sphering the molten pure metal in a ball.

Produced is a metal ball which suppresses an emitted dose. Contained are the steps of melting a pure metal by heating the pure metal at a temperature which is higher than a boiling point of an impurity to be removed, higher than a melting point of the pure metal, and lower than a boiling point of the pure metal, the pure metal containing a U content of 5 ppb or less, a Th content of 5 ppb or less, purity of 99.9% or more and 99.995% or less, and a Pb or Bi content or a total content of Pb and Bi of 1 ppm or more, and the pure metal having the boiling point higher than the boiling point at atmospheric pressure of the impurity to be removed; and sphering the molten pure metal in a ball.