Hyperchip structures and methods of fabricating hyperchips are described. In an example, an integrated circuit assembly includes a first integrated circuit chip having a device side opposite a backside. The device side includes a plurality of transistor devices and a plurality of device side contact points. The backside includes a plurality of backside contacts. A second integrated circuit chip includes a device side having a plurality of device contact points thereon. The second integrated circuit chip is on the first integrated circuit chip in a device side to device side configuration. Ones of the plurality of device contact points of the second integrated circuit chip are coupled to ones of the plurality of device contact points of the first integrated circuit chip. The second integrated circuit chip is smaller than the first integrated circuit chip from a plan view perspective.

A semiconductor device includes a wiring substrate having: a first wiring layer having pads; and a second wiring layer having wirings and via-lands. The via-lands include: first-row via-lands connected to first-row pads of the pads, respectively; and second-row via-lands connected to the second-row pads of the pads, respectively. In the perspective plan view, the first-row via-lands have: first via-lands arranged such that a center of each of the first via-lands is shifted in a direction away from a first side of the semiconductor chip than a position overlapping with a center of the corresponding first-row pad; and second via-lands arranged such that a center of each of the second via-lands arranged at a position closer to the first side than the first via-land. In the perspective plan view, the first and second via-lands are alternately arranged in a first direction along the first side.

The present invention provides a test pad structure of chip, which comprises a plurality of first internal test pads, a plurality of second internal test pads, a plurality of first extended test pads, and a plurality of second extended test pads. The first internal test pads and the second internal test pads are disposed in a chip. The second internal test pads and the first internal test pads are spaced by a distance. The first extended test pads are connected with the first internal test pads. The second extended test pads are connected with the second internal test pads. The first extended test pads and the second extended test pads may increase the contact area to be contacted by probes. Signals or power are transmitted to the first internal test pads and the second internal test pads via the first extended test pads and the second extended test pads for the probes to test the chip.

A display device includes a substrate including a conductive pad, a driving chip facing the substrate and including a conductive bump electrically connected to the conductive pad and an inspection bump which is insulated from the conductive pad, and an adhesive member which is between the conductive pad and the driving chip and connects the conductive pad to the driving chip. The adhesive member includes a first adhesive layer including a conductive ball; and a second adhesive layer facing the first adhesive layer, the second adhesive layer including a first area including a color-changing material, and a second area adjacent to the first area and excluding the color-changing material.

Disclosed are semiconductor packages and their fabricating methods. The semiconductor package comprises connection terminals between a first die and a second die. The first die has signal and peripheral regions and includes first vias on the peripheral region. The second die is on the first die and has second vias on positions that correspond to the first vias. The connection terminals connect the second vias to the first vias. The peripheral region includes first regions adjacent to corners of the first die and second regions adjacent to lateral surfaces of the first die. The connection terminals include first connection terminals on the first regions and second connection terminals on the second regions. A sum of areas of the first connection terminals per unit area on the first regions is greater than that of areas of the second connection terminals per unit area on the second regions.

A semiconductor device includes passive electrical components in a substrate; and an interconnect structure over the passive electrical components, conductive features of the interconnect structure being electrically coupled to the passive electrical components. The conductive features of the interconnect structure includes a first conductive line over the substrate; a conductive bump over the first conductive line, where in a plan view, the conductive bumps has a first elongated shape and is entirely disposed within boundaries of the first conductive line; and a first via between the first conductive line and the conductive bump, the first via electrically connected to the first conductive line and the conductive bump, where in the plan view, the first via has a second elongated shape and is entirely disposed within boundaries of the conductive bump.

A wafer includes a substrate and conductive bumps on a surface of the substrate. In a plan view from a direction perpendicular to the surface of the substrate, the area density of the conductive bumps is higher in a first area than in a second area around the first area in the surface of the substrate. The first area has effective chip areas arranged therein.

An integrated circuit die includes input buffer circuits that are enabled during an input mode of operation in response to first control signals to transmit input signals into the integrated circuit die from conductive bumps. Each of the input buffer circuits is coupled to one of the conductive bumps. The integrated circuit die also includes output buffer circuits that are each coupled to one of the conductive bumps. The output buffer circuits are enabled during an output mode of operation in response to second control signals to transmit output signals from the integrated circuit die to the conductive bumps. The input buffer circuits are disabled from transmitting signals during the output mode of operation in response to the first control signals. The output buffer circuits are disabled from transmitting signals during the input mode of operation in response to the second control signals.

A circuit system includes an interposer that has a first clock network and first and second integrated circuit dies that are mounted on the interposer. The first integrated circuit die includes a phase detector circuit, an adjustable delay circuit that generates a second clock signal in response to a first clock signal received from the first clock network, and a second clock network that generates a third clock signal in response to the second clock signal. The second integrated circuit die comprises a third clock network that generates a fourth clock signal in response to the first clock signal received from the first clock network. The phase detector circuit controls a delay provided by the adjustable delay circuit to the second clock signal based on a phase comparison between phases of the third and fourth clock signals.

A semiconductor package includes a first die including a signal region and a peripheral region bordering the signal region and having first vias in the peripheral region, a second die stacked on the first die and having second vias at positions corresponding to the first vias in the peripheral region, and first connection terminals between the first die and the second die that are configured to connect the second vias to the first vias, respectively. The peripheral region includes first regions and second regions configured to transmit different signals, which are alternately arranged in a first direction. The first vias are arranged in at least two rows along a second direction intersecting the first direction in each of the first and second regions.