A device includes a semiconductor chip including an electrical contact arranged on a main surface of the semiconductor chip. The device includes an external connection element configured to provide a first coax-like electrical connection between the device and a printed circuit board, wherein the first coax-like electrical connection includes a section extending in a direction vertical to the main surface of the semiconductor chip. The device further includes an electrical redistribution layer arranged over the main surface of the semiconductor chip and configured to provide a second coax-like electrical connection between the electrical contact of the semiconductor chip and the external connection element, wherein the second coax-like electrical connection includes a section extending in a direction parallel to the main surface of the semiconductor chip.

Provided is a disclosure for optimizing the number of semiconductor devices on a wafer/substrate. The optimization comprises laying out, cutting, and packaging the devices efficiently.

A flip-chip die package includes a substrate, a die, a plurality of conductive bumps, and a first metal structure, where an upper surface of the die is electrically coupled, using the conductive bumps, to a surface that is of the substrate and that faces the die, and the first metal structure includes a plurality of first metal rods disposed between the substrate and the die, where each first metal rod is electrically coupled to the substrate and the die, and the first metal rods are arranged around a first active functional circuit, and the first active functional circuit includes an electromagnetic radiation capability or an electromagnetic receiving capability in the die.

Provided is a disclosure for optimizing the number of semiconductor devices on a wafer/substrate. The optimization comprises laying out, cutting, and packaging the devices efficiently.

A microelectronics H-frame device includes: a stack of two or more substrates wherein the substrate stack comprises a top substrate and a bottom substrate, wherein bonding of the top substrate to the bottom substrate creates a vertical electrical connection between the top substrate and the bottom substrate, wherein the top surface of the top substrate comprises top substrate top metallization, wherein the bottom surface of the bottom substrate comprises bottom substrate bottom metallization; mid-substrate metallization located between the top substrate and the bottom substrate; a micro-machined top cover bonded to a top side of the substrate stack; and a micro-machined bottom cover bonded to a bottom side of the substrate stack.

A microelectronics H-frame device includes: a stack of two or more substrates wherein the substrate stack comprises a top substrate and a bottom substrate, wherein bonding of the top substrate to the bottom substrate creates a vertical electrical connection between the top substrate and the bottom substrate, wherein the top surface of the top substrate comprises top substrate top metallization, wherein the bottom surface of the bottom substrate comprises bottom substrate bottom metallization; mid-substrate metallization located between the top substrate and the bottom substrate; a micro-machined top cover bonded to a top side of the substrate stack; and a micro-machined bottom cover bonded to a bottom side of the substrate stack.

A device includes a semiconductor chip including an electrical contact arranged on a main surface of the semiconductor chip. The device includes an external connection element configured to provide a first coax-like electrical connection between the device and a printed circuit board, wherein the first coax-like electrical connection includes a section extending in a direction vertical to the main surface of the semiconductor chip. The device further includes an electrical redistribution layer arranged over the main surface of the semiconductor chip and configured to provide a second coax-like electrical connection between the electrical contact of the semiconductor chip and the external connection element, wherein the second coax-like electrical connection includes a section extending in a direction parallel to the main surface of the semiconductor chip.

In an embodiment, a method for forming a solder bump includes preparing a transfer mold having a solder pillar extending from a mold substrate and through a first photoresist layer and having a shape partially defined by a second photoresist layer that is removed prior to transfer of the solder. In an embodiment, the mold substrate is flexible. In an embodiment, the transfer mold is flexible. In an embodiment, the method includes providing a device substrate having a wettable pad. In an embodiment, the method includes placing the transfer mold and the device substrate into aligned contact such that the solder pillar is in contact with the wettable pad. In an embodiment, the method includes forming a metallic bond between the solder pillar and the wettable pad. In an embodiment, the method includes removing the mold substrate and first photoresist layer.

A flip-chip die package includes a substrate, a die, a plurality of conductive bumps, and a first metal structure, where an upper surface of the die is electrically coupled, using the conductive bumps, to a surface that is of the substrate and that faces the die, and the first metal structure includes a plurality of first metal rods disposed between the substrate and the die, where each first metal rod is electrically coupled to the substrate and the die, and the first metal rods are arranged around a first active functional circuit, and the first active functional circuit includes an electromagnetic radiation capability or an electromagnetic receiving capability in the die.

In an embodiment, a method for forming a solder bump includes preparing a transfer mold having a solder pillar extending from a mold substrate and through a first photoresist layer and having a shape partially defined by a second photoresist layer that is removed prior to transfer of the solder. In an embodiment, the mold substrate is flexible. In an embodiment, the transfer mold is flexible. In an embodiment, the method includes providing a device substrate having a wettable pad. In an embodiment, the method includes placing the transfer mold and the device substrate into aligned contact such that the solder pillar is in contact with the wettable pad. In an embodiment, the method includes forming a metallic bond between the solder pillar and the wettable pad. In an embodiment, the method includes removing the mold substrate and first photoresist layer.