H01L2224/14154

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor chip is mounted on a mounting substrate. The semiconductor chip includes plural first bumps on a surface facing the mounting substrate. The plural first bumps each have a shape elongated in a first direction in plan view and are arranged in a second direction perpendicular to the first direction. The mounting substrate includes, on a surface on which the semiconductor chip is mounted, at least one first land connected to the plural first bumps. At least two first bumps of the plural first bumps are connected to each first land. The difference between the dimension of the first land in the second direction and the distance between the outer edges of two first bumps at respective ends of the arranged first bumps connected to the first land is 20 μm or less.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor chip is mounted on a mounting substrate. The semiconductor chip includes plural first bumps on a surface facing the mounting substrate. The plural first bumps each have a shape elongated in a first direction in plan view and are arranged in a second direction perpendicular to the first direction. The mounting substrate includes, on a surface on which the semiconductor chip is mounted, at least one first land connected to the plural first bumps. At least two first bumps of the plural first bumps are connected to each first land. The difference between the dimension of the first land in the second direction and the distance between the outer edges of two first bumps at respective ends of the arranged first bumps connected to the first land is 20 μm or less.

Method and system for packing optimization of semiconductor devices

Provided is a disclosure for optimizing the number of semiconductor devices on a wafer/substrate. The optimization comprises laying out, cutting, and packaging the devices efficiently.

Method and system for packing optimization of semiconductor devices

Provided is a disclosure for optimizing the number of semiconductor devices on a wafer/substrate. The optimization comprises laying out, cutting, and packaging the devices efficiently.

Bump connection placement in quantum devices in a flip chip configuration

Within a layout of a first surface in a flip chip configuration, a bump restriction area is mapped according to a set of bump placement restrictions, wherein a first bump placement restriction specifies an allowed distance range between a bump and a qubit chip element in a layout of the first surface in the flip chip configuration. An electrically conductive material is deposited outside the bump restriction area, to form the bump, wherein the bump comprises an electrically conductive structure that electrically couples a signal from the first surface and is positioned according to the set of bump placement restrictions.

Bump connection placement in quantum devices in a flip chip configuration

Within a layout of a first surface in a flip chip configuration, a bump restriction area is mapped according to a set of bump placement restrictions, wherein a first bump placement restriction specifies an allowed distance range between a bump and a qubit chip element in a layout of the first surface in the flip chip configuration. An electrically conductive material is deposited outside the bump restriction area, to form the bump, wherein the bump comprises an electrically conductive structure that electrically couples a signal from the first surface and is positioned according to the set of bump placement restrictions.

METHOD OF FORMING SEMICONDUCTOR PACKAGE WITH COMPOSITE THERMAL INTERFACE MATERIAL STRUCTURE

A method of forming a semiconductor package is provided. The method includes forming a metallization stack over a semiconductor die. Polymer particles are mounted over the metallization stack. Each of the polymer particles is coated with a first bonding layer. A heat spreader lid is bonded with the semiconductor die by reflowing the first bonding layer. A composite thermal interface material (TIM) structure is formed between the heat spreader lid and the semiconductor die during the bonding. The composite TIM structure includes the first bonding layer and the polymer particles embedded in the first bonding layer.

Method and System for Packing Optimization of Semiconductor Devices
20220157755 · 2022-05-19 ·

Provided is a disclosure for optimizing the number of semiconductor devices on a wafer/substrate. The optimization comprises laying out, cutting, and packaging the devices efficiently.

Method and System for Packing Optimization of Semiconductor Devices
20220157755 · 2022-05-19 ·

Provided is a disclosure for optimizing the number of semiconductor devices on a wafer/substrate. The optimization comprises laying out, cutting, and packaging the devices efficiently.

Semiconductor substrate, semiconductor package including semiconductor substrate, and test method of semiconductor substrate
11769700 · 2023-09-26 · ·

A semiconductor substrate including an upper surface and a lower surface may include a bump pad unit disposed on the upper surface. The semiconductor substrate may also include test pads disposed on the upper surface or the lower surface. The semiconductor substrate may also include traces configured to connect the bump pad unit and the test pads. The bump pad unit includes a main bump pad disposed on the upper surface, and a plurality of side bump pads disposed on the upper surface to be spaced apart from the main bump pad. The traces may connect the main bump pad and the plurality of side bump pads to the test pads in a one-to-one manner.