An integrated circuit (IC) chip includes a via contact plug extending inside a through hole passing through a substrate and a device layer, a via contact liner surrounding the via contact plug, a connection pad liner extending along a bottom surface of the substrate, a dummy bump structure integrally connected to the via contact plug, and a bump structure connected to the connection pad liner. A method of manufacturing an IC chip includes forming an under bump metallurgy (UBM) layer inside and outside the through hole and forming a first connection metal layer, a second connection metal layer, and a third connection metal layer. The first connection metal layer covers the UBM layer inside the through hole, the second connection metal layer is integrally connected to the first connection metal layer, and the third connection metal layer covers the UBM layer on the connection pad liner.

A semiconductor device having an electrode type of the ball grid array (BGA) and a process of forming the electrode are disclosed. The electrode insulating film, a seed layer on the insulating film, a mound metal on the insulating film and an interconnection on the seed layer. The mound metal surrounds the seed layer without forming any gap therebetween. The interconnection, which is formed by electroless plating, is apart from the insulating film with the mound metal as an extension barrier for the plating.

A conductive bump assembly may include a passive substrate. The conductive bump assembly may also include a conductive bump pad supported by the passive substrate and surrounded by a first passivation layer opening. The conductive bump assembly may further include a second passivation layer opening on the passive substrate. The second passivation layer opening may be merged with the first passivation layer opening surrounding the conductive bump pad proximate an edge of the passive substrate. The conductive bump assembly may also include a conductive bump on the conductive bump pad.

In an embodiment a semiconductor component includes a laterally extending contact area laterally interrupted in such a way that material of the contact area laterally delimits at least one recess, the contact area configured to be at a potential, wherein at least one first recess is formed laterally as a circular ring around a lateral center point of the contact area, and wherein at least one second recess extends laterally in a straight line through the lateral center point of the contact area so that the contact area is divided by a corresponding recess into two halves which are not connected by material of the contact area.

The embodiments described provide elongated bonded structures near edges of packaged structures free of solder wetting on sides of copper posts substantially facing the center of the packaged structures. Solder wetting occurs on other sides of copper posts of these bonded structures. The elongated bonded structures are arranged in different arrangements and reduce the chance of shorting between neighboring bonded structures. In addition, the elongated bonded structures improve the reliability performance.

An integrated circuit (IC) chip includes a via contact plug extending inside a through hole passing through a substrate and a device layer, a via contact liner surrounding the via contact plug, a connection pad liner extending along a bottom surface of the substrate, a dummy bump structure integrally connected to the via contact plug, and a bump structure connected to the connection pad liner. A method of manufacturing an IC chip includes forming an under bump metallurgy (UBM) layer inside and outside the through hole and forming a first connection metal layer, a second connection metal layer, and a third connection metal layer. The first connection metal layer covers the UBM layer inside the through hole, the second connection metal layer is integrally connected to the first connection metal layer, and the third connection metal layer covers the UBM layer on the connection pad liner.

Some implementations described herein provide a semiconductor package including an integrated circuit die mounted to an interposer using connection structures. An underfill material between the integrated circuit die and the interposer includes shaped fillets that are below a plane corresponding to a bottom surface of the integrated circuit die. The underfill material including the shaped fillets reduces a likelihood of stresses and/or strains that damage a mold compound from transferring to the mold compound from the underfill material, the integrated circuit die, and/or the interposer. In this way, a quality and reliability of the semiconductor package including the underfill material with the shaped fillets is reduced. By improving the quality and reliability of the semiconductor package, a yield of the semiconductor package may increase to decrease a cost of the semiconductor package.

An integrated circuit (IC) chip includes a via contact plug extending inside a through hole passing through a substrate and a device layer, a via contact liner surrounding the via contact plug, a connection pad liner extending along a bottom surface of the substrate, a dummy bump structure integrally connected to the via contact plug, and a bump structure connected to the connection pad liner. A method of manufacturing an IC chip includes forming an under bump metallurgy (UBM) layer inside and outside the through hole and forming a first connection metal layer, a second connection metal layer, and a third connection metal layer. The first connection metal layer covers the UBM layer inside the through hole, the second connection metal layer is integrally connected to the first connection metal layer, and the third connection metal layer covers the UBM layer on the connection pad liner.

A system-on-wafer structure and a fabrication method. The structure includes a wafer substrate, an integrated chiplet, a system configuration board and a thermal module. The wafer substrate and the integrated chiplet are bonded through a wafer micro bump array and a chiplet micro bump array. The wafer substrate and the system configuration board are bonded through a copper pillar array on wafer substrate topside and a pad on system configuration board backside. A molding layer is provided between the wafer substrate and the system configuration board, and is configured to mold the wafer substrate, the integrated chiplet and the copper pillar array. Integrated chiplet are electrically connected to each other through a re-distributed layer in wafer substrate. The integrated chiplet is electrically connected to the system configuration board through the re-distributed layer and the copper pillar array. The thermal module is attached to the backside of the wafer substrate.

A chip package assembly and method for fabricating the same are provided which utilize a stiffener to improve a package substrate against out of plane deformation. In one example, a chip package assembly is provided that includes a package substrate, at least one integrated circuit (IC) die and a stiffener. The package substrate has a first surface and a second surface coupled by a side wall. The at least one IC die is disposed on the first surface of the package substrate. The stiffener is disposed outward of the at least one IC die. The stiffener has a first surface disposed outward of and bonded to the side wall of the package substrate. The stiffener has a second surface bonded to at least one of the first and second surfaces of the package substrate.