Hyperchip structures and methods of fabricating hyperchips are described. In an example, an integrated circuit assembly includes a first integrated circuit chip having a device side opposite a backside. The device side includes a plurality of transistor devices and a plurality of device side contact points. The backside includes a plurality of backside contacts. A second integrated circuit chip includes a device side having a plurality of device contact points thereon. The second integrated circuit chip is on the first integrated circuit chip in a device side to device side configuration. Ones of the plurality of device contact points of the second integrated circuit chip are coupled to ones of the plurality of device contact points of the first integrated circuit chip. The second integrated circuit chip is smaller than the first integrated circuit chip from a plan view perspective.

Systems, methods, and devices for a ball grid array with non-linear conductive routing are described herein. Such a ball grid array may include a plurality of solder balls that are electrically coupled by a non-linear conductive routing. The non-linear conductive routing may include a plurality of routing sections where each of the plurality of routing sections is disposed at an angle to adjacent routing sections.

A die includes one or more power delivery layers to deliver power within the die. Additionally, the die also includes one or more transistor layers to at least partially implement a programmable fabric for the die. Furthermore, the die further includes one or more signal routing layers to transmit signals for use by the programmable fabric. Moreover, the one or more transistor layers physically separate the one or more power delivery layers from the one or more signal routing layers.

A semiconductor package may include a base, a first chip on the base, and first connection patterns that connect and couple the base and the first chip. The first chip may include a substrate, pad patterns on the substrate, a passivation layer on the substrate and having openings, and pillars on the substrate, the pad patterns include a first signal pad and a second signal pad, the first connection patterns are in contact with the pillars, the pillars include a first signal pillar in contact with the first signal pad and a second signal pillar in contact with the second signal pad, the openings in the passivation layer include a first opening having a sidewall facing a side surface of the first signal pillar and surrounding the side surface of the first signal pillar, and a second opening having a sidewall facing a side surface of the second signal pillar and surrounding the side surface of the second signal pillar, and a maximum width of the second opening is greater than a maximum width of the first opening.

Wafer processing techniques, or methods for forming semiconductor rides, are disclosed for fabricating plated pillar dies having die-level electromagnetic interference (EMI) shield layers. In embodiments, the method includes depositing a metallic seed layer over a semiconductor wafer and contacting die pads thereon. An electroplating process is then performed to compile plated pillars on the metallic seed layer and across the semiconductor wafer. Following electroplating, selected regions of the metallic seed layer are removed to produce electrical isolation gaps around a first pillar type, while leaving intact portions of the metallic seed layer to yield a wafer-level EMI shield layer. The semiconductor wafer is separated into singulated plated pillar dies, each including a die-level EMI shield layer and plated pillars of the first pillar type electrically isolated from the EMI shield layer.

A display device includes a substrate including a conductive pad, a driving chip facing the substrate and including a conductive bump electrically connected to the conductive pad and an inspection bump which is insulated from the conductive pad, and an adhesive member which is between the conductive pad and the driving chip and connects the conductive pad to the driving chip. The adhesive member includes a first adhesive layer including a conductive ball; and a second adhesive layer facing the first adhesive layer, the second adhesive layer including a first area including a color-changing material, and a second area adjacent to the first area and excluding the color-changing material.

A display device includes a substrate including a conductive pad, a driving chip facing the substrate and including a conductive bump electrically connected to the conductive pad and an inspection bump which is insulated from the conductive pad, and an adhesive member which is between the conductive pad and the driving chip and connects the conductive pad to the driving chip. The adhesive member includes a first adhesive layer including a conductive ball; and a second adhesive layer facing the first adhesive layer, the second adhesive layer including a first area including a color-changing material, and a second area adjacent to the first area and excluding the color-changing material.

A chip for controlled electrostatic discharging to avoid loading on input/output pins, comprising: a die comprising: a first plurality of connector pins each conductively coupled to one or more signal paths, each of the first plurality of connector pins having a first height; and a second plurality of connector pins independent of any signal paths, each of the second plurality of connector pins having a second height greater than the first height.

The present disclosure provides a semiconductor device and a preparation method thereof. The semiconductor device comprises: a semiconductor substrate; a passivation layer, arranged on an upper surface of the semiconductor substrate; a protective layer, arranged on an upper surface of the passivation layer, a dummy opening being formed on the protective layer; and, a dummy bump, partially located in the dummy opening and closely attached to the protective layer.

A wafer includes a substrate and conductive bumps on a surface of the substrate. In a plan view from a direction perpendicular to the surface of the substrate, the area density of the conductive bumps is higher in a first area than in a second area around the first area in the surface of the substrate. The first area has effective chip areas arranged therein.