A semiconductor device includes a first die, a second die bonding to the first die thereby forming a bonding interface, and a pad of the first die and exposed from a polymeric layer of the first die. The semiconductor device further has a conductive material on the pad and extended from the pad in a direction parallel to a stacking direction of the first die and the second die. In the semiconductor device, the conductive material extended to a top surface, which is vertically higher than a backside of the second die, wherein the backside is a surface opposite to the bonding interface.

Embodiments disclosed herein include electronic packages with fin pitch first level interconnects. In an embodiment, the electronic package comprises a die and a package substrate attached to the die by a plurality of first level interconnects (FLIs). In an embodiment, individual ones of the plurality of FLIs comprise, a first pad on the package substrate, a solder on the first pad, a second pad on the die, and a bump on the second pad. In an embodiment, the bump comprises a porous nanostructure, and the solder at least partially fills the porous nanostructure.

A MEMS device is disclosed. In an embodiment a MEMS device includes a substrate having an active region and at least one integrated electrical and mechanical connection element configured to electrically and mechanically mount the MEMS device to a carrier, wherein the connection element comprises a stress-reducing structure.

A MEMS device is disclosed. In an embodiment a MEMS device includes a substrate having an active region and at least one integrated electrical and mechanical connection element configured to electrically and mechanically mount the MEMS device to a carrier, wherein the connection element comprises a stress-reducing structure.

A semiconductor device includes a first semiconductor chip including a conductive pad, an insulating layer provided on the conductive pad, and having an aperture exposing a part of the conductive pad, and a first bump layer provided on the insulating layer and connected to the conductive pad via the aperture, and a second semiconductor chip including an electrode and a second bump layer provided on the electrode. The first bump layer includes a recessed portion provided at the aperture and in contact with the second bump layer, and a raised portion provided adjacent the aperture and in contact with the second bump layer.

A dual-die memory package includes a package substrate, a first die, a second die, a bonding wire, and a conductive pillar. The first die is disposed on the package substrate and includes a first conductive pad and a first bonding pad. The first conductive pad and the first bonding pad are disposed on a surface of the first die facing away from the package substrate. The second die is disposed on a side of the first die away from the package substrate. The second die includes a second conductive pad disposed on a surface of the second die facing the first die. The first bonding pad is electrically coupled to the package substrate through the bonding wire. The first conductive pad is electrically coupled to the second conductive pad through the conductive pillar.

A MEMS device is disclosed. In an embodiment a MEMS device includes a substrate having an active region and at least one integrated electrical and mechanical connection element configured to electrically and mechanically mount the MEMS device to a carrier, wherein the connection element comprises a stress-reducing structure.

A MEMS device is disclosed. In an embodiment a MEMS device includes a substrate having an active region and at least one integrated electrical and mechanical connection element configured to electrically and mechanically mount the MEMS device to a carrier, wherein the connection element comprises a stress-reducing structure.

The joint reliability in flip chip bonding of a semiconductor device is enhanced. Prior to flip chip bonding, flux 9 is applied to the solder bumps 5a for flip chip bonding over a substrate and reflow/cleaning is carried out and then flip chip bonding is carried out. This makes is possible to thin the oxide film over the surfaces of the solder bumps 5a and make the oxide film uniform. As a result, it is possible to suppress the production of local solder protrusions to reduce the production of solder bridges during flip chip bonding and enhance the joint reliability in the flip chip bonding of the semiconductor device.

A semiconductor device includes a first die, a second die bonding to the first die thereby forming a bonding interface, and a pad of the first die and exposed from a polymeric layer of the first die. The semiconductor device further has a conductive material on the pad and extended from the pad in a direction parallel to a stacking direction of the first die and the second die. In the semiconductor device, the conductive material extended to a top surface, which is vertically higher than a backside of the second die, wherein the backside is a surface opposite to the bonding interface.