Semiconductor assemblies including thermal management configurations for reducing heat transfer between overlapping devices and associated systems and methods are disclosed herein. A semiconductor assembly may comprise a first device and a second device with a thermally conductive layer, a thermal-insulator interposer, or a combination thereof disposed between the first and second devices. The thermally conductive layer and/or the thermal-insulator interposer may be configured to reduce heat transfer between the first and second devices.

Semiconductor assemblies including thermal management configurations for reducing heat transfer between overlapping devices and associated systems and methods are disclosed herein. A semiconductor assembly may comprise a first device and a second device with a thermally conductive layer, a thermal-insulator interposer, or a combination thereof disposed between the first and second devices. The thermally conductive layer and/or the thermal-insulator interposer may be configured to reduce heat transfer between the first and second devices.

A wafer level package device, electronic device, and fabrication methods for fabrication of the wafer level package device are described that include forming an exposed lead tip on the wafer level package for providing a solder buttress structure when coupling the wafer level package device to another electrical component. In implementations, the wafer level package device includes at least one integrated circuit die, a metal pad, a first dielectric layer, a redistribution layer, a second dielectric layer, a pillar structure, a molding layer, a pillar layer, and a plating layer, where the pillar layer is sawn to form pad contacts on at least two sides of the wafer level package device. The exposed pad contact facilitate a solder fillet and buttress structure resulting in improved board level reliability.

A wafer level package device, electronic device, and fabrication methods for fabrication of the wafer level package device are described that include forming an exposed lead tip on the wafer level package for providing a solder buttress structure when coupling the wafer level package device to another electrical component. In implementations, the wafer level package device includes at least one integrated circuit die, a metal pad, a first dielectric layer, a redistribution layer, a second dielectric layer, a pillar structure, a molding layer, a pillar layer, and a plating layer, where the pillar layer is sawn to form pad contacts on at least two sides of the wafer level package device. The exposed pad contact facilitate a solder fillet and buttress structure resulting in improved board level reliability.

Various aspects of the present disclosure set forth IC dies, microelectronic assemblies, as well as related devices and packages, related to direct chip attach of dies and circuit boards. An example microelectronic assembly includes a die with IC components provided over the die's frontside, and a metallization stack provided over the die's backside. The die further includes die interconnects extending between the frontside and the backside of the die, to electrically couple the IC components and the metallization stack. The assembly further includes backside conductive contacts, provided over the side of the metallization stack facing away from the die, the backside conductive contacts configured to route signals to/from the IC components via the metallization stack and the die interconnects, and configured to be coupled to respective conductive contacts of a circuit board in absence of a package substrate between the die and the circuit board.

Various aspects of the present disclosure set forth IC dies, microelectronic assemblies, as well as related devices and packages, related to direct chip attach of dies and circuit boards. An example microelectronic assembly includes a die with IC components provided over the die's frontside, and a metallization stack provided over the die's backside. The die further includes die interconnects extending between the frontside and the backside of the die, to electrically couple the IC components and the metallization stack. The assembly further includes backside conductive contacts, provided over the side of the metallization stack facing away from the die, the backside conductive contacts configured to route signals to/from the IC components via the metallization stack and the die interconnects, and configured to be coupled to respective conductive contacts of a circuit board in absence of a package substrate between the die and the circuit board.

A semiconductor apparatus includes a substrate, a plurality of heat generating elements mounted on the substrate, a heat dissipation member fixed to the substrate and disposed such that the heat generating elements are interposed between the heat dissipation member and the substrate, at least one first heat conduction member provided on a first surface of the heat dissipation member, the first surface facing the heat generating elements, and a plurality of second heat conduction members each provided on a second surface of a corresponding one of the heat generating elements, the second surface facing the heat dissipation member, wherein the at least one first heat conduction member and the second heat conduction members are in contact with each other at an interface between opposing surfaces thereof.

A circuit board includes a semiconductor substrate having a first surface and a second surface located on an opposite side from the first surface, a through hole penetrating the first surface and the second surface, an organic insulating film disposed on the first surface and a side surface of the through hole, and a conductor disposed on an opposite side of the organic insulating film from a side surface side of the through hole. The side surface of the through hole has a first side surface coupled to the first surface and having a width decreased from the first surface toward the second surface, and a second side surface coupled to the second surface from an end portion of the first side surface on a second surface side.

Semiconductor devices including stacked semiconductor dies and associated systems and methods are disclosed herein. In one embodiment, a semiconductor device includes a first semiconductor die coupled to a package substrate and a second semiconductor die stacked over the first semiconductor die and laterally offset from the first semiconductor die. The second semiconductor die can accordingly include an overhang portion that extends beyond a side of the first semiconductor die and faces the package substrate. In some embodiments, the second semiconductor die includes bond pads at the overhang portion that are electrically coupled to the package substrate via conductive features disposed therebetween. In certain embodiments, the first semiconductor die can include second bond pads electrically coupled to the package substrate via wire bonds.

Semiconductor devices including stacked semiconductor dies and associated systems and methods are disclosed herein. In one embodiment, a semiconductor device includes a first semiconductor die coupled to a package substrate and a second semiconductor die stacked over the first semiconductor die and laterally offset from the first semiconductor die. The second semiconductor die can accordingly include an overhang portion that extends beyond a side of the first semiconductor die and faces the package substrate. In some embodiments, the second semiconductor die includes bond pads at the overhang portion that are electrically coupled to the package substrate via conductive features disposed therebetween. In certain embodiments, the first semiconductor die can include second bond pads electrically coupled to the package substrate via wire bonds.