A chip-to-chip interface of a multi-chip module (MCM), including: bidirectional data links for transmitting data signals and a direction indicator bit, wherein the direction indicator bit switches a direction of the bidirectional data links in real-time; a clock link for transmitting a clock signal common to the bidirectional data links, wherein the data and clock links are comprised of conductive traces between the chips and laid out to be of substantially equal length; and a clock driver means having a digitally programmable clock signal delay.

Apparatuses relating to a microelectronic package are disclosed. In one such apparatus, a substrate has first contacts on an upper surface thereof. A microelectronic die has a lower surface facing the upper surface of the substrate and having second contacts on an upper surface of the microelectronic die. Wire bonds have bases joined to the first contacts and have edge surfaces between the bases and corresponding end surfaces. A first portion of the wire bonds are interconnected between a first portion of the first contacts and the second contacts. The end surfaces of a second portion of the wire bonds are above the upper surface of the microelectronic die. A dielectric layer is above the upper surface of the substrate and between the wire bonds. The second portion of the wire bonds have uppermost portions thereof bent over to be parallel with an upper surface of the dielectric layer.

A semiconductor chip that includes a chip body that has a first side surface, a second side surface, a third side surface, and a fourth side surface; a central region at a central portion of the chip body; and a peripheral region at a peripheral portion of the chip body and adjacent to at least one of the first side surface to the fourth side surface, wherein the peripheral region includes a first unit region that includes a plurality of first bumps of a first bump density, and a second unit region that includes a plurality of second bumps of a second bump density higher than the first bump density.

An integrated circuit has corner regions and non-corner regions between the corner regions and includes a semiconductor substrate, conductive pads, passivation layer, post-passivation layer, first conductive posts, and second conductive posts. The conductive pads are disposed over the semiconductor substrate. The passivation layer and the post-passivation layer are sequentially disposed over the conductive pads. The first conductive posts and the second conductive posts are disposed on the post-passivation layer and are electrically connected to the conductive pads. The first conductive posts are disposed in the corner regions and the second conductive posts are disposed in the non-corner regions. Each of the first conductive posts has a body portion and a protruding portion connected to the body portion. A central axis of the body portion of the first conductive post has an offset from a central axis of the protruding portion of the first conductive post.

A semiconductor package including a package redistribution layer, a cover insulating layer on the package redistribution layer; a lower semiconductor chip arranged between the package redistribution layer and the cover insulating layer and electrically connected to the package redistribution layer, a lower molding layer surrounding the lower semiconductor chip and filling between the package redistribution layer and the cover insulating layer, a plurality of connection posts electrically connected to the package redistribution layer by passing through the cover insulating layer and the lower molding layer, an upper semiconductor chip arranged above the cover insulating layer electrically connected to the plurality of connection posts, and an upper molding layer filling between the upper semiconductor chip and the cover insulating layer and surrounding the upper semiconductor chip may be provided.

The present disclosure is directed to multichip semiconductor packages, and methods for making them, which includes a package substrate with an integrated bridge frame having a first horizontal portion positioned on a top surface of the package substrate, with first and second dies positioned overlapping the first horizontal portion of the bridge frame, and a second horizontal portion positioned on the bottom surface of the package substrate, with third and fourth dies positioned overlapping the second horizontal portion of the bridge frame. The bridge frame further includes first and second vertical portions separated by a portion of the package substrate positioned under the first horizontal portion of the bridge frame between the top surface and bottom surfaces of the package substrate, and a plurality of vertical interconnects adjacent to the first and second vertical portions of the bridge frame.

In a semiconductor device (SP1) according to an embodiment, a solder resist film (first insulating layer, SR1) which is in contact with the base material layer, and a resin body (second insulating layer, 4) which is in contact with the solder resist film and the semiconductor chip, are laminated in between the base material layer (2CR) of a wiring substrate 2 and a semiconductor chip (3). In addition, a linear expansion coefficient of the solder resist film is equal to or larger than a linear expansion coefficient of the base material layer, and the linear expansion coefficient of the solder resist film is equal to or smaller than a linear expansion coefficient of the resin body. Also, the linear expansion coefficient of the base material layer is smaller than the linear expansion coefficient of the resin body. According to the above-described configuration, damage of the semiconductor device caused by a temperature cyclic load can be suppressed, and thereby reliability can be improved.

A semiconductor package includes a package substrate including a first region, a thermal block penetrating the first region and exposed at top and bottom surfaces of the package substrate, a semiconductor chip on the package substrate, bumps disposed between the package substrate and the semiconductor chip and including first bumps being in contact with the thermal block, and terminals disposed on the bottom surface of the package substrate and including first terminals being in contact with the thermal block. The thermal block is one of a power path and a ground path.

[Problem] To provide a multi-layer sheet for mold underfill encapsulation, which exhibits good infiltrability between electrodes. [Solution] In order to solve the aforementioned problem, the present invention provides a multi-layer sheet for mold underfill encapsulation, which is characterized by having provided as an outermost layer thereof an (A) layer that comprises a resin composition having a local maximum loss tangent (tan δ) value of 3 or more at a measurement temperature of 125° C. for a measurement time of 0-100 seconds.

A semiconductor device is provided with a semiconductor chip. The semiconductor chip has a semiconductor substrate, an interconnect layer, an inductor and conductive pads (first pads). The interconnect layer is provided on the semiconductor substrate. The interconnect layer includes the inductor. The pads are provided on the interconnect layer. The pads are provided in a region within a circuit forming region of the semiconductor chip, which does not overlap the inductor.