H01L2224/17183

High Density Multi-Component Packages
20190080982 · 2019-03-14 ·

Provided is a high density multi-component package and a method of manufacturing a high density multi-component package. The high density multi-component package comprises at least two electronic components wherein each electronic component of the electronic components comprise a first external termination and a second external termination. At least one interposer is between the adjacent electronic components and attached to the interposer by an interconnect wherein the interposer is selected from an active interposer and a mechanical interposer. Adjacent electronic components are connected serially.

SEMICONDUCTOR METHOD FOR FORMING SEMICONDUCTOR STRUCTURE HAVING BUMP ON TILTING UPPER CORNER SURFACE
20190074197 · 2019-03-07 ·

A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate and a first conductive bump. The semiconductor substrate has an integrated circuit and an interconnection metal layer, and a tilt surface is formed on an edge of the semiconductor substrate. The first conductive bump is electrically connected to the integrated circuit via the interconnection metal layer, and is disposed on the tilt surface, wherein a profile of the first conductive bump extends beyond a side surface of the edge of the semiconductor layer.

SEMICONDUCTOR STRUCTURE HAVING BUMP ON TILTING UPPER CORNER SURFACE
20180337116 · 2018-11-22 ·

A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate and a first conductive bump. The semiconductor substrate has an integrated circuit and an interconnection metal layer, and a tilt surface is formed on an edge of the semiconductor substrate. The first conductive bump is electrically connected to the integrated circuit via the interconnection metal layer, and is disposed on the tilt surface, wherein a profile of the first conductive bump extends beyond a side surface of the edge of the semiconductor layer.

SEMICONDUCTOR PACKAGE
20240297139 · 2024-09-05 ·

A semiconductor package comprising a package substrate that has a recessed portion on a top surface thereof, a lower semiconductor chip in the recessed portion of the package substrate, an upper semiconductor chip on the lower semiconductor chip and the package substrate and having a width greater than that of the lower semiconductor chip, a plurality of first bumps directly between the package substrate and the upper semiconductor chip, and a plurality of second bumps directly between the lower semiconductor chip and the upper semiconductor chip. A pitch of the second bumps is less than that of the first bumps.

A SURFACE MOUNT DEVICE AND A METHOD OF ATTACHING SUCH A DEVICE
20180197835 · 2018-07-12 ·

A device comprises a surface mount component on a substrate, in which the surface mount component is attached by a set of discrete mechanical coupling parts and by a bonding layer. This enables the mechanical coupling properties and the electrical/thermal properties to be optimized separately.

Printed circuit board with embedded electronic component and manufacturing method thereof

A printed circuit board including an electronic component and a method of producing the same are provided. The printed circuit board includes a multilayered substrate including an insulation layer and an inner circuit layer laminated therein, a cavity disposed in the multilayered substrate, a via disposed in the insulation layer and configured to electrically connect the inner circuit layer with another inner circuit layer, a first electronic component inserted in the cavity, and a bump pad disposed on a surface of the cavity facing the first electronic component, and the bump pad is formed by having the insulation layer and the via exposed to a lateral side of the cavity.

ORTHOGONAL BRIDGE PACKAGING TECHNOLOGY
20250006699 · 2025-01-02 ·

A package structure includes a substrate having an upper surface; a first chip package positioned on the upper surface of the substrate, the first chip package comprising a first chip having a first integrated circuit connected to a first redistribution layer; a second chip package positioned on the upper surface of the substrate, the second chip package comprising a second chip having a second integrated circuit connected to a second redistribution layer; an orthogonal bridge positioned between the first chip package and the second chip package and having an interconnection to the first redistribution layer and the second redistribution layer; and a heat spreader positioned in direct contact with at least one of the first chip package, the second chip package, or the orthogonal bridge. The orthogonal bridge is arranged substantially orthogonal to the upper surface of the substrate.

Semiconductor package

Provided is a semiconductor package including a first semiconductor chip provided on a package substrate, an interconnection substrate provided on the package substrate, the interconnection substrate having a side surface facing the first semiconductor chip, and a second semiconductor chip provided on the interconnection substrate and extended to a region on a top surface of the first semiconductor chip, wherein the interconnection substrate includes a lower interconnection layer facing the package substrate, an upper interconnection layer facing the first semiconductor chip, and a passive device between the lower interconnection layer and the upper interconnection layer, and wherein the passive device is electrically connected to the second semiconductor chip.

Multi-die semiconductor structure with intermediate vertical side chip and semiconductor package for same

Semiconductor multi-die structures having intermediate vertical side chips, and packages housing such semiconductor multi-die structures, are described. In an example, a multi-die semiconductor structure includes a first main stacked dies (MSD) structure having a first substantially horizontal arrangement of semiconductor dies. A second MSD structure having a second substantially horizontal arrangement of semiconductor dies is also included. An intermediate vertical side chip (i-VSC) is disposed between and electrically coupled to the first and second MSD structures.

MULTI-DIE SEMICONDUCTOR STRUCTURE WITH INTERMEDIATE VERTICAL SIDE CHIP AND SEMICONDUCTOR PACKAGE FOR SAME

Semiconductor multi-die structures having intermediate vertical side chips, and packages housing such semiconductor multi-die structures, are described. In an example, a multi-die semiconductor structure includes a first main stacked dies (MSD) structure having a first substantially horizontal arrangement of semiconductor dies. A second MSD structure having a second substantially horizontal arrangement of semiconductor dies is also included. An intermediate vertical side chip (i-VSC) is disposed between and electrically coupled to the first and second MSD structures.