A bonding member (10) includes surface-processed silver surfaces (11a, 11b).

Contact bumps between a contact pad and a substrate can include a rough surface that can mate with the material of the substrate of which may be flexible. The rough surface can enhance the bonding strength of the contacts, for example, against shear and tension forces, especially for flexible systems such as smart label and may be formed via roller or other methods.

Contact bumps between a contact pad and a substrate can include a rough surface that can mate with the material of the substrate of which may be flexible. The rough surface can enhance the bonding strength of the contacts, for example, against shear and tension forces, especially for flexible systems such as smart label and may be formed via roller or other methods.

A method for assembling a first substrate and a second substrate via metal adhesion layers, the method including: depositing, on a surface of each of the first and second substrates, a metal layer with a thickness controlled to limit surface roughness of each of the deposited metal layers to below a roughness threshold; exposing the metal layers deposited on the surface of the first and second substrates to air; directly adhering the first and second substrates by placing the deposited metal adhesion layers in contact, the surface roughness of the contacted layers being that obtained at an end of the depositing. The adhesion can be carried out in the air, at atmospheric pressure and at room temperature, without applying pressure to the assembly of the first and second substrates resulting from directly contacting the deposited metal adhesion layers.

This invention relates to a method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate with the following steps, especially the following sequence: forming a first reservoir in a surface layer on the first contact surface and a second reservoir in a surface layer on the second contact surface, the surface layers of the first and second contact surfaces being comprised of respective native oxide materials of one or more second educts respectively contained in reaction layers of the first and second substrates, partially filling the first and second reservoirs with one or more first educts; and reacting the first educts filled in the first reservoir with the second educts contained in the reaction layer of the second substrate to at least partially strengthen a permanent bond formed between the first and second contact surfaces.

An optoelectronic component includes a substrate, a connecting element applied on the substrate and a layer sequence that emits electromagnetic radiation. The layer sequence is applied on the connecting element. The connecting element includes at least one connecting material that has an oriented molecular configuration. The connecting element has at least one parameter that is anisotropic.

Embodiments herein describe techniques for bonded wafers that includes a first wafer bonded with a second wafer, and a stress compensation layer in contact with the first wafer or the second wafer. The first wafer has a first stress level at a first location, and a second stress level different from the first stress level at a second location. The stress compensation layer includes a first material at a first location of the stress compensation layer that induces a third stress level at the first location of the first wafer, a second material different from the first material at a second location of the stress compensation layer that induces a fourth stress level different from the third stress level at the second location of the first wafer. Other embodiments may be described and/or claimed.

Embodiments herein describe techniques for bonded wafers that includes a first wafer bonded with a second wafer, and a stress compensation layer in contact with the first wafer or the second wafer. The first wafer has a first stress level at a first location, and a second stress level different from the first stress level at a second location. The stress compensation layer includes a first material at a first location of the stress compensation layer that induces a third stress level at the first location of the first wafer, a second material different from the first material at a second location of the stress compensation layer that induces a fourth stress level different from the third stress level at the second location of the first wafer. Other embodiments may be described and/or claimed.

An anisotropic conductive film has a first insulating resin layer and a second insulating resin layer. The first insulating resin layer is formed of a photopolymerized resin, the second insulating resin layer is formed of a thermo-cationically or thermo-anionically polymerizable resin, a photo-cationically or photo-anionically polymerizable resin, a thermo-radically polymerizable resin, or a photo-radically polymerizable resin, and conductive particles for anisotropic conductive connection are disposed in a single layer on a surface of the first insulating resin layer on a side of the second insulating resin layer. The elastic modulus of the anisotropic conductive film as a whole is 0.13 MPa or more.

An anisotropic conductive film has a first insulating resin layer and a second insulating resin layer. The first insulating resin layer is formed of a photopolymerized resin, the second insulating resin layer is formed of a thermo-cationically or thermo-anionically polymerizable resin, a photo-cationically or photo-anionically polymerizable resin, a thermo-radically polymerizable resin, or a photo-radically polymerizable resin, and conductive particles for anisotropic conductive connection are disposed in a single layer on a surface of the first insulating resin layer on a side of the second insulating resin layer. The elastic modulus of the anisotropic conductive film as a whole is 0.13 MPa or more.