A thermal interface material may be formed comprising a polymer material and a self-healing constituent. The thermal interface material may be used in an integrated circuit assembly between at least one integrated and a heat dissipation device, wherein the self-healing constituent changes the physical properties of the thermal interface material in response to thermo-mechanical stresses to prevent failure modes from occurring during the operation of the integrated circuit assembly.

A thermal interface material may be formed comprising a polymer material and a self-healing constituent. The thermal interface material may be used in an integrated circuit assembly between at least one integrated and a heat dissipation device, wherein the self-healing constituent changes the physical properties of the thermal interface material in response to thermo-mechanical stresses to prevent failure modes from occurring during the operation of the integrated circuit assembly.

The present disclosure relates to a method for manufacturing a semiconductor package including vacuum-laminating a non-conductive film on a substrate on which a plurality of through silicon vias are provided and bump electrodes are formed, and then performing UV irradiation, wherein an increase in melt viscosity before and after UV irradiation can be adjusted to 30% or less, whereby a bonding can be performed without voids during thermo-compression bonding, and resin-insertion phenomenon between solders can be prevented, fillets can be minimized and reliability can be improved.

An electronic device includes a first part, and a circuit plate including a circuit substrate, a plating film made of a plating material and being disposed on a front surface of the substrate. The plating film includes a first part region on which the first part is disposed via a first solder, and a liquid-repellent region extending along a periphery side of the first part region in a surface layer of the plating film, and having a liquid repellency greater than a liquid repellency of the plating film. The liquid-repellent region includes a resist region. The plating film includes a remaining portion between the liquid-repellent region and the front surface of the circuit substrate in a thickness direction of the plating film orthogonal to the front surface. The remaining portion is made of the plating material and is free of the oxidized plating material.

An electronic device includes a first part, and a circuit plate including a circuit substrate, a plating film made of a plating material and being disposed on a front surface of the substrate. The plating film includes a first part region on which the first part is disposed via a first solder, and a liquid-repellent region extending along a periphery side of the first part region in a surface layer of the plating film, and having a liquid repellency greater than a liquid repellency of the plating film. The liquid-repellent region includes a resist region. The plating film includes a remaining portion between the liquid-repellent region and the front surface of the circuit substrate in a thickness direction of the plating film orthogonal to the front surface. The remaining portion is made of the plating material and is free of the oxidized plating material.

A semiconductor device according to an embodiment includes a lead frame, a semiconductor chip provided above the lead frame, and a bonding material including a sintered material containing a predetermined metal material and a predetermined resin, where the bonding material includes a first portion provided between the lead frame and the semiconductor chip, and a second portion provided on the lead frame around the semiconductor chip, where the bonding material bonds the lead frame and the semiconductor chip, wherein an angle formed by a lower face of the semiconductor chip and an upper face of the second portion adjacent to the lower face is 80 degrees or less.

A semiconductor device according to an embodiment includes a lead frame, a semiconductor chip provided above the lead frame, and a bonding material including a sintered material containing a predetermined metal material and a predetermined resin, where the bonding material includes a first portion provided between the lead frame and the semiconductor chip, and a second portion provided on the lead frame around the semiconductor chip, where the bonding material bonds the lead frame and the semiconductor chip, wherein an angle formed by a lower face of the semiconductor chip and an upper face of the second portion adjacent to the lower face is 80 degrees or less.

A connection structure including: a first circuit member having a plurality of first electrodes; a second circuit member having a plurality of second electrodes; and an intermediate layer having a plurality of bonding portions electrically connecting the first electrodes and the second electrodes, in which at least one of the first electrode and the second electrode that are connected by the bonding portion is a gold electrode, and 90% or more of the plurality of bonding portions include a first region containing a tin-gold alloy and connecting the first electrode and the second electrode and a second region containing bismuth and being in contact with the first region.

Various embodiments of the teachings herein include a semifinished product for use in the populating of a power electronics component by a connecting method. The product includes an electrically insulating prepreg frame electrically insulated. The prepreg frame is configured for surrounding an applied connecting material at a metallized installation site during the population. A material of the prepreg frame enables simultaneous processability of electrical connection and electrical insulation by compression of the insulation material in the form of the semifinished product since the processing parameters of the electrical connecting material and the semifinished product are compatible.

Various embodiments of the teachings herein include a semifinished product for use in the populating of a power electronics component by a connecting method. The product includes an electrically insulating prepreg frame electrically insulated. The prepreg frame is configured for surrounding an applied connecting material at a metallized installation site during the population. A material of the prepreg frame enables simultaneous processability of electrical connection and electrical insulation by compression of the insulation material in the form of the semifinished product since the processing parameters of the electrical connecting material and the semifinished product are compatible.