A device (2) is formed on a main surface of a substrate (1). The main surface of the substrate (1) is bonded to the undersurface of the counter substrate (14) via the bonding member (11,12,13) in a hollow state. A circuit (17) and a bump structure (26) are formed on the top surface of the counter substrate (14). The bump structure (26) is positioned in a region corresponding to at least the bonding member (11,12,13), and has a higher height than that of the circuit (17).

A method for the production of a silver sintering agent in the form of a layer-shaped silver sintering body having silver oxide surfaces and the use thereof are provided.

A method for the production of a silver sintering agent in the form of a layer-shaped silver sintering body having silver oxide surfaces and the use thereof are provided.

Provided are: a conductive paste in which sinterability of silver particles the conductive paste can be easily controlled by using silver particles having predetermined crystal transformation characteristics defined by an XRD analysis, and after a sintering treatment, excellent electrical conductivity and thermal conductivity can be stably obtained; and a die bonding method using the conductive paste. Disclosed is a conductive paste which includes silver particles having a volume average particle size of 0.1 to 30 μm as a sinterable conductive material, and a dispersing medium for making a paste-like form, and in which when the integrated intensity of the peak at 2θ=38°±0.2° in the X-ray diffraction chart obtainable by an XRD analysis before a sintering treatment of the silver particles is designated as S1, and the integrated intensity of the peak at 2θ=38°±0.2° in the X-ray diffraction chart obtainable by an XRD analysis after a sintering treatment (250° C., 60 minutes) of the silver particles is designated as S2, the value of S2/S1 is adjusted to a value within the range of 0.2 to 0.8.

Embodiments herein describe techniques for bonded wafers that includes a first wafer bonded with a second wafer, and a stress compensation layer in contact with the first wafer or the second wafer. The first wafer has a first stress level at a first location, and a second stress level different from the first stress level at a second location. The stress compensation layer includes a first material at a first location of the stress compensation layer that induces a third stress level at the first location of the first wafer, a second material different from the first material at a second location of the stress compensation layer that induces a fourth stress level different from the third stress level at the second location of the first wafer. Other embodiments may be described and/or claimed.

Embodiments herein describe techniques for bonded wafers that includes a first wafer bonded with a second wafer, and a stress compensation layer in contact with the first wafer or the second wafer. The first wafer has a first stress level at a first location, and a second stress level different from the first stress level at a second location. The stress compensation layer includes a first material at a first location of the stress compensation layer that induces a third stress level at the first location of the first wafer, a second material different from the first material at a second location of the stress compensation layer that induces a fourth stress level different from the third stress level at the second location of the first wafer. Other embodiments may be described and/or claimed.

Disclosed are exemplary embodiments of compressible foamed thermal interface materials. Also disclosed are methods of making and using compressible foamed thermal interface materials.

Disclosed are exemplary embodiments of compressible foamed thermal interface materials. Also disclosed are methods of making and using compressible foamed thermal interface materials.

Disclosed are exemplary embodiments of compressible foamed thermal interface materials. Also disclosed are methods of making and using compressible foamed thermal interface materials.

Disclosed are exemplary embodiments of compressible foamed thermal interface materials. Also disclosed are methods of making and using compressible foamed thermal interface materials.