A method for attaching a semiconductor die to a substrate includes providing a substrate that includes an attachment layer at a surface of the substrate. The attachment layer is covered by a protective flash plating layer. The protective flash plating layer has a reflow temperature less than or equal to a reflow temperature of the attachment layer. The method further includes preheating the substrate to a temperature greater than or equal to a reflow temperature of the attachment layer, attaching a semiconductor die to the attachment layer, and cooling the substrate and semiconductor die.

A method for attaching a semiconductor die to a substrate includes providing a substrate that includes an attachment layer at a surface of the substrate. The attachment layer is covered by a protective flash plating layer. The protective flash plating layer has a reflow temperature less than or equal to a reflow temperature of the attachment layer. The method further includes preheating the substrate to a temperature greater than or equal to a reflow temperature of the attachment layer, attaching a semiconductor die to the attachment layer, and cooling the substrate and semiconductor die.

A bonding structure formed on a substrate includes an indium layer and a passivating nickel plating formed on the indium layer. The nickel plating serves to prevent a reaction involving the indium layer.

A bonding structure formed on a substrate includes an indium layer and a passivating nickel plating formed on the indium layer. The nickel plating serves to prevent a reaction involving the indium layer.

The present disclosure relates to a semiconductor chip that includes a substrate, a metal layer, and a number of component portions. Herein, the substrate has a substrate base and a number of protrusions protruding from a bottom surface of the substrate base. The substrate base and the protrusions are formed of a same material. Each of the protrusions has a same height. At least one via hole extends vertically through one protrusion and the substrate base. The metal layer selectively covers exposed surfaces at a backside of the substrate and fully covers inner surfaces of the at least one via hole. The component portions reside over a top surface of the substrate base, such that a certain one of the component portions is electrically coupled to a portion of the metal layer at the top of the at least one via hole.

The present disclosure relates to a semiconductor chip that includes a substrate, a metal layer, and a number of component portions. Herein, the substrate has a substrate base and a number of protrusions protruding from a bottom surface of the substrate base. The substrate base and the protrusions are formed of a same material. Each of the protrusions has a same height. At least one via hole extends vertically through one protrusion and the substrate base. The metal layer selectively covers exposed surfaces at a backside of the substrate and fully covers inner surfaces of the at least one via hole. The component portions reside over a top surface of the substrate base, such that a certain one of the component portions is electrically coupled to a portion of the metal layer at the top of the at least one via hole.

The present disclosure relates to a semiconductor chip that includes a substrate, a metal layer, and a number of component portions. Herein, the substrate has a substrate base and a number of protrusions protruding from a bottom surface of the substrate base. The substrate base and the protrusions are formed of a same material. Each of the protrusions has a same height. At least one via hole extends vertically through one protrusion and the substrate base. The metal layer selectively covers exposed surfaces at a backside of the substrate and fully covers inner surfaces of the at least one via hole. The component portions reside over a top surface of the substrate base, such that a certain one of the component portions is electrically coupled to a portion of the metal layer at the top of the at least one via hole.

The present disclosure relates to a semiconductor chip that includes a substrate, a metal layer, and a number of component portions. Herein, the substrate has a substrate base and a number of protrusions protruding from a bottom surface of the substrate base. The substrate base and the protrusions are formed of a same material. Each of the protrusions has a same height. At least one via hole extends vertically through one protrusion and the substrate base. The metal layer selectively covers exposed surfaces at a backside of the substrate and fully covers inner surfaces of the at least one via hole. The component portions reside over a top surface of the substrate base, such that a certain one of the component portions is electrically coupled to a portion of the metal layer at the top of the at least one via hole.

A manufacturing method includes the step of forming a diced semiconductor wafer (10) including semiconductor chips (11) from a semiconductor wafer (W) typically on a dicing tape (T1). The diced semiconductor wafer (10) on the dicing tape (T1) is laminated with a sinter-bonding sheet (20). The semiconductor chips (11) each with a sinter-bonding material layer (21) derived from the sinter-bonding sheet (20) are picked up typically from the dicing tape (T1). The semiconductor chips (11) each with the sinter-bonding material layer are temporarily secured through the sinter-bonding material layer (21) to a substrate. Through a heating process, sintered layers are formed from the sinter-bonding material layers (21) lying between the temporarily secured semiconductor chips (11) and the substrate, to bond the semiconductor chips (11) to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to individual semiconductor chips while reducing loss of the sinter-bonding material.

A manufacturing method includes the step of forming a diced semiconductor wafer (10) including semiconductor chips (11) from a semiconductor wafer (W) typically on a dicing tape (T1). The diced semiconductor wafer (10) on the dicing tape (T1) is laminated with a sinter-bonding sheet (20). The semiconductor chips (11) each with a sinter-bonding material layer (21) derived from the sinter-bonding sheet (20) are picked up typically from the dicing tape (T1). The semiconductor chips (11) each with the sinter-bonding material layer are temporarily secured through the sinter-bonding material layer (21) to a substrate. Through a heating process, sintered layers are formed from the sinter-bonding material layers (21) lying between the temporarily secured semiconductor chips (11) and the substrate, to bond the semiconductor chips (11) to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to individual semiconductor chips while reducing loss of the sinter-bonding material.