A power semiconductor module includes a metal bottom plate, an insulating heat dissipation material layer, a chip, a binding plate, silica gel, and an outer housing, where the binding plate includes a copper plate and a copper strap. The copper plate is connected to the copper strap through welding, and the binding plate is configured to connect circuits of various components. The metal bottom plate is connected to the insulating heat dissipation material layer through tin soldering, the chip is connected to the insulating heat dissipation material layer through tin soldering, the chip is connected to the copper strap, and the copper strap is connected to the insulating heat dissipation material layer. The module can resolve the prior-art problem of mechanical stress generated on the chip in the case of a temperature change when a relatively thick copper frame is applied to the packaging of the power semiconductor module.

In the semiconductor module according to the present invention, a conducting member which is used to electrically connect a semiconductor element arranged on a substrate or a bus bar with another electronic component is provided with a structure having flexibility capable of, in a junction with the semiconductor element, reducing the thermal stress due to difference in a coefficient of linear expansion between the conducting member and the semiconductor element, and absorbing dimensional error in objects to be connected. Therefore, the semiconductor module achieves both increased current capacity of the semiconductor device and improved reliability of the semiconductor module.

In the semiconductor module according to the present invention, a conducting member which is used to electrically connect a semiconductor element arranged on a substrate or a bus bar with another electronic component is provided with a structure having flexibility capable of, in a junction with the semiconductor element, reducing the thermal stress due to difference in a coefficient of linear expansion between the conducting member and the semiconductor element, and absorbing dimensional error in objects to be connected. Therefore, the semiconductor module achieves both increased current capacity of the semiconductor device and improved reliability of the semiconductor module.