In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.

In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.

Aspects of the present disclosure relate to a molded electronic package and a method for manufacturing the same. The molded electronic package includes a first substrate, a second substrate, an electronic component arranged on the first substrate, a spring member arranged between the second substrate and the electronic component, the spring member including a first contact portion being fixated relative to the second substrate, and a second contact portion physically contacting the electronic component, and a body of solidified molding compound configured to encapsulate the electronic component and the spring member and to mutually fixate the first substrate, the second substrate, the electronic component and the spring member. The second substrate and the spring member are electrically and/or thermally conductive.

Aspects of the present disclosure relate to a molded electronic package and a method for manufacturing the same. The molded electronic package includes a first substrate, a second substrate, an electronic component arranged on the first substrate, a spring member arranged between the second substrate and the electronic component, the spring member including a first contact portion being fixated relative to the second substrate, and a second contact portion physically contacting the electronic component, and a body of solidified molding compound configured to encapsulate the electronic component and the spring member and to mutually fixate the first substrate, the second substrate, the electronic component and the spring member. The second substrate and the spring member are electrically and/or thermally conductive.

Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 μm to 0.8 μM.

Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 μm to 0.8 μM.

In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.

In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.

A semiconductor device 10 includes a pair of electrodes 16 and a conductive connection member 21 electrically bonded to the pair of electrodes 16. At least a portion of a perimeter of a bonding surface 24 of at least one of the pair of electrodes 16 and the conductive connection member 21 includes an electromigration reducing area 22.

The invention relates to a method for electrically contacting a component (10) (for example a power component and/or a (semiconductor) component having at least one transistor, preferably an IGBT (insulated-gate bipolar transistor)) having at least one contact (40, 50), at least one open-pored contact piece (60, 70) is galvanically (electrochemically or free of external current) connected to at least one contact (40, 50). In this way, a component module is achieved. The contact (40, 50) is preferably a flat part or has a contact surface, the largest planar extent thereof being greater than an extension of the contact (40, 50) perpendicular to said contact surface. The temperature of the galvanic connection is at most 100° C., preferably at most 60° C., advantageously at most 20° C. and ideally at most 5° C. and/or deviates from the operating temperature of the component by at most 50° C., preferably by at most 20° C., in particular by at most 10° C. and ideally by at most 5° C., preferably by at most 2° C. The component (10) can be contacted by means of the contact piece (60, 70) with a further component, a current conductor and/or a substrate (90). Preferably, a component (10) having two contacts (40, 50) on opposite sides of the component (10) is used, wherein at least one open-pored contact piece (60, 70) is galvanically connected to each contact (40, 50).