A semiconductor device includes a device carrier, a first semiconductor chip mounted on the device carrier and a second semiconductor chip mounted on the device carrier. Further, the semiconductor device includes a first contact clip bonded to a first electrode of the first semiconductor chip, a second contact clip bonded to a first electrode of the second semiconductor chip and an insulating connector configured to hold the first contact clip and the second contact clip together.

A semiconductor device includes a device carrier, a first semiconductor chip mounted on the device carrier and a second semiconductor chip mounted on the device carrier. Further, the semiconductor device includes a first contact clip bonded to a first electrode of the first semiconductor chip, a second contact clip bonded to a first electrode of the second semiconductor chip and an insulating connector configured to hold the first contact clip and the second contact clip together.

A semiconductor module is provided, including: a semiconductor chip having an upper surface electrode and a lower surface electrode opposite to the upper surface electrode; a metal wiring plate electrically connected to the upper surface electrode of the semiconductor chip; and a sheet-like low elastic sheet provided on the metal wiring plate, the low elastic sheet having elastic modulus lower than that of the metal wiring plate. A manufacturing method for a semiconductor module is provided, including: providing a semiconductor chip; solder-bonding a metal wiring plate above said semiconductor chip; and applying a sheet-like low elastic sheet having the elastic modulus lower than that of said metal wiring plate to said metal wiring plate.

A semiconductor module is provided, including: a semiconductor chip having an upper surface electrode and a lower surface electrode opposite to the upper surface electrode; a metal wiring plate electrically connected to the upper surface electrode of the semiconductor chip; and a sheet-like low elastic sheet provided on the metal wiring plate, the low elastic sheet having elastic modulus lower than that of the metal wiring plate. A manufacturing method for a semiconductor module is provided, including: providing a semiconductor chip; solder-bonding a metal wiring plate above said semiconductor chip; and applying a sheet-like low elastic sheet having the elastic modulus lower than that of said metal wiring plate to said metal wiring plate.

The invention relates to a method for electrically contacting a component (10) (for example a power component and/or a (semiconductor) component having at least one transistor, preferably an IGBT (insulated-gate bipolar transistor)) having at least one contact (40, 50), at least one open-pored contact piece (60, 70) is galvanically (electrochemically or free of external current) connected to at least one contact (40, 50). In this way, a component module is achieved. The contact (40, 50) is preferably a flat part or has a contact surface, the largest planar extent thereof being greater than an extension of the contact (40, 50) perpendicular to said contact surface. The temperature of the galvanic connection is at most 100° C., preferably at most 60° C., advantageously at most 20° C. and ideally at most 5° C. and/or deviates from the operating temperature of the component by at most 50° C., preferably by at most 20° C., in particular by at most 10° C. and ideally by at most 5° C., preferably by at most 2° C. The component (10) can be contacted by means of the contact piece (60, 70) with a further component, a current conductor and/or a substrate (90). Preferably, a component (10) having two contacts (40, 50) on opposite sides of the component (10) is used, wherein at least one open-pored contact piece (60, 70) is galvanically connected to each contact (40, 50).

The invention relates to a method for electrically contacting a component (10) (for example a power component and/or a (semiconductor) component having at least one transistor, preferably an IGBT (insulated-gate bipolar transistor)) having at least one contact (40, 50), at least one open-pored contact piece (60, 70) is galvanically (electrochemically or free of external current) connected to at least one contact (40, 50). In this way, a component module is achieved. The contact (40, 50) is preferably a flat part or has a contact surface, the largest planar extent thereof being greater than an extension of the contact (40, 50) perpendicular to said contact surface. The temperature of the galvanic connection is at most 100° C., preferably at most 60° C., advantageously at most 20° C. and ideally at most 5° C. and/or deviates from the operating temperature of the component by at most 50° C., preferably by at most 20° C., in particular by at most 10° C. and ideally by at most 5° C., preferably by at most 2° C. The component (10) can be contacted by means of the contact piece (60, 70) with a further component, a current conductor and/or a substrate (90). Preferably, a component (10) having two contacts (40, 50) on opposite sides of the component (10) is used, wherein at least one open-pored contact piece (60, 70) is galvanically connected to each contact (40, 50).

A semiconductor module is provided, including: a semiconductor chip having an upper surface electrode and a lower surface electrode opposite to the upper surface electrode; a metal wiring plate electrically connected to the upper surface electrode of the semiconductor chip; and a sheet-like low elastic sheet provided on the metal wiring plate, the low elastic sheet having elastic modulus lower than that of the metal wiring plate. A manufacturing method for a semiconductor module is provided, including: providing a semiconductor chip; solder-bonding a metal wiring plate above said semiconductor chip; and applying a sheet-like low elastic sheet having the elastic modulus lower than that of said metal wiring plate to said metal wiring plate.

A semiconductor module is provided, including: a semiconductor chip having an upper surface electrode and a lower surface electrode opposite to the upper surface electrode; a metal wiring plate electrically connected to the upper surface electrode of the semiconductor chip; and a sheet-like low elastic sheet provided on the metal wiring plate, the low elastic sheet having elastic modulus lower than that of the metal wiring plate. A manufacturing method for a semiconductor module is provided, including: providing a semiconductor chip; solder-bonding a metal wiring plate above said semiconductor chip; and applying a sheet-like low elastic sheet having the elastic modulus lower than that of said metal wiring plate to said metal wiring plate.

The invention relates to a method for electrically contacting a component (10) (for example a power component and/or a (semiconductor) component having at least one transistor, preferably an IGBT (insulated-gate bipolar transistor)) having at least one contact (40, 50), at least one open-pored contact piece (60, 70) is galvanically (electrochemically or free of external current) connected to at least one contact (40, 50). In this way, a component module is achieved. The contact (40, 50) is preferably a flat part or has a contact surface, the largest planar extent thereof being greater than an extension of the contact (40, 50) perpendicular to said contact surface. The temperature of the galvanic connection is at most 100 C., preferably at most 60 C., advantageously at most 20 C. and ideally at most 5 C. and/or deviates from the operating temperature of the component by at most 50 C., preferably by at most 20 C., in particular by at most 10 C. and ideally by at most 5 C., preferably by at most 2 C. The component (10) can be contacted by means of the contact piece (60, 70) with a further component, a current conductor and/or a substrate (90). Preferably, a component (10) having two contacts (40, 50) on opposite sides of the component (10) is used, wherein at least one open-pored contact piece (60, 70) is galvanically connected to each contact (40, 50).

The invention relates to a method for electrically contacting a component (10) (for example a power component and/or a (semiconductor) component having at least one transistor, preferably an IGBT (insulated-gate bipolar transistor)) having at least one contact (40, 50), at least one open-pored contact piece (60, 70) is galvanically (electrochemically or free of external current) connected to at least one contact (40, 50). In this way, a component module is achieved. The contact (40, 50) is preferably a flat part or has a contact surface, the largest planar extent thereof being greater than an extension of the contact (40, 50) perpendicular to said contact surface. The temperature of the galvanic connection is at most 100 C., preferably at most 60 C., advantageously at most 20 C. and ideally at most 5 C. and/or deviates from the operating temperature of the component by at most 50 C., preferably by at most 20 C., in particular by at most 10 C. and ideally by at most 5 C., preferably by at most 2 C. The component (10) can be contacted by means of the contact piece (60, 70) with a further component, a current conductor and/or a substrate (90). Preferably, a component (10) having two contacts (40, 50) on opposite sides of the component (10) is used, wherein at least one open-pored contact piece (60, 70) is galvanically connected to each contact (40, 50).