A semiconductor device is extremely reliable because a sealant thereof is difficult to deteriorate even when a SiC semiconductor element is energized. The semiconductor device is produced by sealing a SiC semiconductor element 11 mounted on a multilayer substrate 12 and electrically conductive connection members 14 and 18 with a sealant 20 containing an ultraviolet light absorbent.

A semiconductor device is extremely reliable because a sealant thereof is difficult to deteriorate even when a SiC semiconductor element is energized. The semiconductor device is produced by sealing a SiC semiconductor element 11 mounted on a multilayer substrate 12 and electrically conductive connection members 14 and 18 with a sealant 20 containing an ultraviolet light absorbent.

A semiconductor device in which even when cracks occur in a sealing material, the entry of moisture through the cracks can be prevented. A semiconductor device comprising a semiconductor element 11 mounted on a laminated substrate 12 and an electrically conductive connecting member, and a sealing material which seals the semiconductor element and the electrically conductive connecting member, wherein the sealing material includes a sealing layer 20 sealing members to be sealed including the laminated substrate 12, the semiconductor element 11, and the electrically conductive connecting member and including a thermosetting resin, and a protective layer 21 coating the sealing layer and including a silicone rubber, and wherein a value A.sub.1 of a tensile strength × elongation at break of the sealing layer 20 is less than a value A.sub.2 of a tensile strength × elongation at break of the protective layer 21, and the A.sub.2 is 1600 MPa or less.

A semiconductor device in which even when cracks occur in a sealing material, the entry of moisture through the cracks can be prevented. A semiconductor device comprising a semiconductor element 11 mounted on a laminated substrate 12 and an electrically conductive connecting member, and a sealing material which seals the semiconductor element and the electrically conductive connecting member, wherein the sealing material includes a sealing layer 20 sealing members to be sealed including the laminated substrate 12, the semiconductor element 11, and the electrically conductive connecting member and including a thermosetting resin, and a protective layer 21 coating the sealing layer and including a silicone rubber, and wherein a value A.sub.1 of a tensile strength × elongation at break of the sealing layer 20 is less than a value A.sub.2 of a tensile strength × elongation at break of the protective layer 21, and the A.sub.2 is 1600 MPa or less.

An object is to provide highly reliable semiconductor element bonding portion and semiconductor device that have high heat resistance and improved adhesion between a bonding material and a sealing resin. Provided is a semiconductor element bonding portion in which the semiconductor element 11 and an electrically conductive plate 123a are bonded to each other by a bonding layer 10 and the bonding layer 10 includes a metal nanoparticle sintered body 101 and a coupling agent 102 including an SH group.

An object is to provide highly reliable semiconductor element bonding portion and semiconductor device that have high heat resistance and improved adhesion between a bonding material and a sealing resin. Provided is a semiconductor element bonding portion in which the semiconductor element 11 and an electrically conductive plate 123a are bonded to each other by a bonding layer 10 and the bonding layer 10 includes a metal nanoparticle sintered body 101 and a coupling agent 102 including an SH group.

A semiconductor device in which a semiconductor element mounted on a laminate substrate and an electrically conductive connection member are sealed with a sealing material, includes: a primer layer in an interface between the sealing material and sealed members including the laminate substrate, the semiconductor element, and the electrically conductive connection member, in which the sealing material includes a first sealing layer which is provided in contact with the primer layer; and a second sealing layer which covers the first sealing layer, the semiconductor device satisfies α.sub.p≥α.sub.1>α.sub.2 in which α.sub.p, α.sub.1, and α.sub.2 represent coefficients of linear thermal expansion of the primer layer, the first sealing layer, and the second sealing layer, respectively, α.sub.c≥15×10.sup.−6/° C. in which α.sub.c represents a composite coefficient of linear thermal expansion of the sealing layers, and E.sub.c≥5 GPa or more in which E.sub.c represents a composite Young's modulus of the sealing layers.

A semiconductor device in which a semiconductor element mounted on a laminate substrate and an electrically conductive connection member are sealed with a sealing material, includes: a primer layer in an interface between the sealing material and sealed members including the laminate substrate, the semiconductor element, and the electrically conductive connection member, in which the sealing material includes a first sealing layer which is provided in contact with the primer layer; and a second sealing layer which covers the first sealing layer, the semiconductor device satisfies α.sub.p≥α.sub.1>α.sub.2 in which α.sub.p, α.sub.1, and α.sub.2 represent coefficients of linear thermal expansion of the primer layer, the first sealing layer, and the second sealing layer, respectively, α.sub.c≥15×10.sup.−6/° C. in which α.sub.c represents a composite coefficient of linear thermal expansion of the sealing layers, and E.sub.c≥5 GPa or more in which E.sub.c represents a composite Young's modulus of the sealing layers.

A semiconductor device 10 includes a pair of electrodes 16 and a conductive connection member 21 electrically bonded to the pair of electrodes 16. At least a portion of a perimeter of a bonding surface 24 of at least one of the pair of electrodes 16 and the conductive connection member 21 includes an electromigration reducing area 22.

A semiconductor device in which a semiconductor element mounted on a laminate substrate and an electrically conductive connection member are sealed with a sealing material, includes: a primer layer in an interface between the sealing material and sealed members including the laminate substrate, the semiconductor element, and the electrically conductive connection member, in which the sealing material includes a first sealing layer which is provided in contact with the primer layer; and a second sealing layer which covers the first sealing layer, the semiconductor device satisfies α.sub.p≥α.sub.1>α.sub.2 in which α.sub.p, α.sub.1, and α.sub.2 represent coefficients of linear thermal expansion of the primer layer, the first sealing layer, and the second sealing layer, respectively, α.sub.c≥15×10.sup.−6/° C. in which α.sub.c represents a composite coefficient of linear thermal expansion of the sealing layers, and E.sub.c≥5 GPa or more in which E.sub.c represents a composite Young's modulus of the sealing layers.