It is an object to provide technology enabling suppression of scattering of metal powder during ultrasonic bonding to suppress discharge and abnormal operation of a semiconductor device. A semiconductor device includes: an insulating substrate including an insulating layer and a metal pattern disposed on the insulating layer; and an electrode bonded on the metal pattern. The electrode includes, in a portion inward of a peripheral portion of a bonded surface being a surface of the electrode bonded on the metal pattern, a receiving portion recessed upward and capable of receiving metal powder generated during bonding of the electrode and the metal pattern, and the peripheral portion of the bonded surface of the electrode is bonded on the metal pattern.

A variable-stiffness module comprises a rigid structure (10) having a first stiffness, an intermediate substrate (20) having a second stiffness less than the first stiffness, and a flexible substrate (30) having a third stiffness less than the second stiffness. The rigid structure (10) is disposed on the intermediate substrate (20) and the intermediate substrate (20) is disposed on the flexible substrate (30). A conductor (40) is disposed partially on the intermediate substrate (21) and partially on the flexible substrate (30) and connected to the rigid structure (10). The conductor (40) extends from the rigid structure (10) to the intermediate substrate (21) to the flexible substrate (30). In some embodiments, a variable-stiffness module comprises any combination of multiple rigid structures, multiple intermediate substrates, and multiple conductors. The conductor (40) can be an optical conductor or an electrical conductor and can be disposed over the rigid structure (10) or between the rigid structure (10) and the intermediate substrate (21).

A semiconductor power arrangement includes a chip carrier having a first surface and a second surface opposite the first surface. The semiconductor power arrangement further includes a plurality of power semiconductor chips attached to the chip carrier, wherein the power semiconductor chips are inclined to the first and/or second surface of the chip carrier.

A variable-stiffness module includes a rigid structure having a first stiffness, an intermediate substrate having a second stiffness less than the first stiffness, and a flexible substrate having a third stiffness less than the second stiffness. The rigid structure is disposed on the intermediate substrate and the intermediate substrate is disposed on the flexible substrate. A conductor is disposed partially on the intermediate substrate and partially on the flexible substrate and is connected to the rigid structure. The conductor extends from the rigid structure to the intermediate substrate to the flexible substrate. In some embodiments, a variable-stiffness module includes any combination of multiple rigid structures, multiple intermediate substrates, and multiple conductors. The conductor can be an optical conductor or an electrical conductor and can be disposed over the rigid structure or between the rigid structure and the intermediate substrate.