A semiconductor device includes a semiconductor element, at least one first resin member, and at least one conducting wire. The semiconductor element includes a front electrode and a body part. The at least one first resin member is disposed on a second surface of the front electrode. The at least one conducting wire includes a joining part. The at least one first resin member includes a convex part. The convex part protrudes from the front electrode in a direction away from the body part. The at least one conducting wire includes a concave part. The concave part is adjacent to the joining part. The concave part extends along the convex part. The concave part is fitted to the convex part.

A semiconductor device includes a die pad, a bond post, a die disposed over the die pad, a wire coupled between the die and the bond post and having a first portion bonded to the die at a first bond area and a second portion bonded to the bond post at a second bond area, a first bonding cover disposed over the first portion, and a second bonding cover disposed over the second portion. A method includes bonding a first portion of a wire to a die at a first bond area, bonding a second portion of the wire to a first bond post of a lead frame at a second bond area, applying a bonding material over the first bond area to form a first bonding cover, and applying the bonding material over the second bond area to form a second bonding cover.

A bonding wire includes a wire core including a silver-palladium alloy. A coating layer is disposed on a sidewall of the wire core. A palladium content of the silver-palladium alloy ranges from about 0.1 wt % to about 1.5 wt %.

To provide a novel Cu bonding wire that achieves a favorable FAB shape and a favorable bondability of the 2nd bonded part, and further achieves favorable bond reliability even in a rigorous high-temperature environment. The bonding wire for semiconductor devices includes: a core material of Cu or Cu alloy; and a coating layer containing conductive metal other than Cu formed on a surface of the core material, wherein the coating layer has a region containing Ni as a main component on a core material side, and has a region containing Au and Ni on a wire surface side, in a thickness direction of the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, a ratio C.sub.Au/C.sub.Ni of a concentration C.sub.Au (mass %) of Au to a concentration C.sub.Ni (mass %) of Ni relative to the entire wire is 0.02 or more and 0.7 or less, a concentration of Au at the surface of the wire is 10 atomic % or more and 90 atomic % or less, and at least one of the following conditions (i) and (ii) is satisfied: (i) a concentration of In relative to the entire wire is 1 ppm by mass or more and 100 ppm by mass or less (ii) a concentration of Ag relative to the entire wire is 1 ppm by mass or more and 500 ppm by mass or less.

Techniques for thermal management of an integrated circuit die are provided. In an example, an apparatus can include a first integrated circuit die having a thermal bond pad and a plurality of active components and a pair of thermoelectric bond wires. The thermal bond pad can be electrically isolated from the plurality of active components and the pair of thermoelectric bond wires can be coupled to the thermal bond pad at a bond location.

A bonding wire includes a wire core including a silver-palladium alloy, and a coating layer disposed on a sidewall of the wire core. A palladium content of the silver-palladium alloy ranges from about 0.1 wt % to about 1.5 wt %.

A die package having a plurality of connection pads, a die substrate supporting a plurality of connection elements, a first lead having a first metal core with a first core diameter, and a dielectric layer surrounding the first metal core, the dielectric layer having a first dielectric thickness that varies along its length and/or the dielectric layer having an outer metal layer at least partially surrounding the dielectric layer, for selectively modifying the electrical characteristics of the lead.

A semiconductor apparatus includes a semiconductor device, a lower wire member, and an upper wire member. The semiconductor device includes a semiconductor device body having a main surface, and a metal layer. The lower wire member includes an end surface and an end surface. In a plan view of the main surface, the end surface and the end surface are located inside a periphery of the semiconductor device. The upper wire member is stacked on the lower wire member. In the plan view of the main surface, a portion of the upper wire member is located outside the periphery of the semiconductor device. The upper wire member is joined to the metal layer with the lower wire member being interposed therebetween.

A semiconductor device includes a die pad, a bond post, a die disposed over the die pad, a wire coupled between the die and the bond post and having a first portion bonded to the die at a first bond area and a second portion bonded to the bond post at a second bond area, a first bonding cover disposed over the first portion, and a second bonding cover disposed over the second portion. A method includes bonding a first portion of a wire to a die at a first bond area, bonding a second portion of the wire to a first bond post of a lead frame at a second bond area, applying a bonding material over the first bond area to form a first bonding cover, and applying the bonding material over the second bond area to form a second bonding cover.

There is provided a novel Cu bonding wire for semiconductor devices that achieves a favorable shape stability of a 2nd bonded part. The bonding wire includes: a core material of Cu or a Cu alloy; and a coating layer containing a conductive metal other than Cu formed on a surface of the core material, wherein an average size of crystal grains in a wire circumferential direction, obtained by analyzing a surface of the wire by an electron backscattered diffraction (EBSD) method, is 35 nm or more and 140 nm or less, three or more elements selected from the group consisting of Pd, Pt, Au, Ni, and Ag are contained in a region (hereinafter, referred to as a region d.sub.0-10) from the surface to a depth of 10 nm in a concentration profile in a depth direction of the wire obtained by measurement using Auger electron spectroscopy (AES), and concentration conditions (i) and (ii) below are satisfied: (i) for at least three elements out of the three or more elements contained in the region d.sub.0-10, each element have an average concentration in the region d.sub.0-10 of 5 atomic % or more, and (ii) for all elements out of the three or more elements contained in the region d.sub.0-10, each element have an average concentration in the region d.sub.0-10 of 80 atomic % or less.