A semiconductor device includes a semiconductor element, at least one first resin member, and at least one conducting wire. The semiconductor element includes a front electrode and a body part. The at least one first resin member is disposed on a second surface of the front electrode. The at least one conducting wire includes a joining part. The at least one first resin member includes a convex part. The convex part protrudes from the front electrode in a direction away from the body part. The at least one conducting wire includes a concave part. The concave part is adjacent to the joining part. The concave part extends along the convex part. The concave part is fitted to the convex part.

A die package having lead structures connecting to a die that provide for electromagnetic interference reductions. Mixed impedance leads connected to the die have a first lead with a first metal core, a dielectric layer surrounding the first metal core, and first outer metal layer connected to ground; and a second lead with a second metal core, and a second dielectric layer surrounding the second metal core, and a second outer metal layer connected to ground. Each lead reducing susceptibility to EMI and crosstalk.

A semiconductor device includes a substrate that has a first surface and a second surface on which a plurality of solder balls are provided, a semiconductor memory on the first surface of the substrate, a controller arranged on the first surface of the substrate, separated from the semiconductor memory along a first direction, and configured to control the semiconductor memory, a graphite sheet extending along the first direction above the controller and the semiconductor memory, and a first sealing material that seals the semiconductor memory, the controller, and the graphite sheet.

A semiconductor device includes a die pad, a bond post, a die disposed over the die pad, a wire coupled between the die and the bond post and having a first portion bonded to the die at a first bond area and a second portion bonded to the bond post at a second bond area, a first bonding cover disposed over the first portion, and a second bonding cover disposed over the second portion. A method includes bonding a first portion of a wire to a die at a first bond area, bonding a second portion of the wire to a first bond post of a lead frame at a second bond area, applying a bonding material over the first bond area to form a first bonding cover, and applying the bonding material over the second bond area to form a second bonding cover.

A semiconductor device includes a substrate that has a first surface and a second surface on which a plurality of solder balls are provided, a semiconductor memory on the first surface of the substrate, a controller arranged on the first surface of the substrate, separated from the semiconductor memory along a first direction, and configured to control the semiconductor memory, a graphite sheet extending along the first direction above the controller and the semiconductor memory, and a first sealing material that seals the semiconductor memory, the controller, and the graphite sheet.

A semiconductor module includes a semiconductor element, a substrate, and a bond connector designed as a gate resistor, shunt, resistor in an RC filter or fuse. The bond connector includes a core made of a first metal material and a jacket which is designed to envelope the core and made from a second metal material that is different from the first metal material, with the first metal material having an electrical conductivity which is lower than an electrical conductivity of the second metal material. At least one of the semiconductor element and the substrate is connected to the bond connector.

The present invention provides a ball forming method for forming a ball portion at a tip of a bonding wire which includes a core material mainly composed of Cu, and a coating layer mainly composed of Pd and formed over a surface of the core material, wherein the ball portion is formed in non-oxidizing atmosphere gas including hydrocarbon which is gas at room temperature and atmospheric pressure, the method being capable of improving Pd coverage on a ball surface in forming a ball at a tip of the Pd-coated Cu bonding wire.

A method includes forming a plurality of metal posts. The plurality of metal posts is interconnected to form a metal-post row by weak portions between neighboring ones of the plurality of metal posts. The weak portions include a same metal as the plurality of metal posts. A majority of each of the plurality of metal posts is separated from respective neighboring ones of the plurality of metal posts. An end portion of each of the plurality of metal posts is plated with a metal. The plurality of metal posts is disposed into a metal post-storage. The method further includes retrieving one of the metal posts from a metal-post storage, and bonding the one of the metal posts on a metal pad.

A bond wire having a metal core, a dielectric layer, and a ground connectable metallization, wherein the bond wire has one or more vapor barrier coatings. Further, the present invention relates to a die package with at least one bond wire according to the invention.

A semiconductor package structure includes a substrate, and a package preform. The substrate includes a plurality of conductive tracing wires. The package preform includes a semiconductor chip and a plurality of binding wires. The semiconductor chip includes a plurality of welding spots, and the welding spots are electrically connected with corresponding conductive tracing wires by the binding wires. Each binding wire comprises a carbon nanotube composite wire, the carbon nanotube composite wire includes a carbon nanotube wire and a metal layer. The carbon nanotube wire consists of a plurality of carbon nanotubes spirally arranged along an axial direction an axial direction of the carbon nanotube wire.