There is provided an Al wiring material which suppresses a chip crack and achieves thermal shock resistance while suppressing lowering of a yield at the time of manufacture. The Al wiring material contains at least Sc and Zr so as to satisfy 0.01≤x1≤0.5 and 0.01≤x2≤0.3 where x1 is a content of Sc [% by weight] and x2 is a content of Zr [% by weight], with the balance comprising Al.

There is provided an Al wiring material which suppresses a chip crack and achieves thermal shock resistance while suppressing lowering of a yield at the time of manufacture. The Al wiring material contains at least Sc and Zr so as to satisfy 0.01≤x1≤0.5 and 0.01≤x2≤0.3 where x1 is a content of Sc [% by weight] and x2 is a content of Zr [% by weight], with the balance comprising Al.

A lead frame is formed with exposed lead tips. The leads are not attached at their tips to any of a tie bar, a dam bar or an end bar, so when the lead frame is plated, the lead tips are plated. During packaging, after die attach and molding, when the lead frame is cut from the frame assembly, the lead tips are not cut, so the plating remains on the tips. This improves solder joint reliability when the package is mounted on a PCB. The lead frame has connection bars that run parallel to the leads from the tie bar to the end bar. The connection bars provide stability to the leads during wire bonding, but are cut from the lead frame after wire bonding.

A lead frame is formed with exposed lead tips. The leads are not attached at their tips to any of a tie bar, a dam bar or an end bar, so when the lead frame is plated, the lead tips are plated. During packaging, after die attach and molding, when the lead frame is cut from the frame assembly, the lead tips are not cut, so the plating remains on the tips. This improves solder joint reliability when the package is mounted on a PCB. The lead frame has connection bars that run parallel to the leads from the tie bar to the end bar. The connection bars provide stability to the leads during wire bonding, but are cut from the lead frame after wire bonding.

The present invention relates to an electronic circuit arrangement (10) comprising: a substrate (12) having a first surface (12a) and a second surface (12b), an electronic circuit, an electrical connection part (16) for providing an electrical connection to the electronic circuit and being arranged on the first surface (12a), and at least one electrical wire (18). The electrical wire (18) comprises at least one conductive core (20) and an isolation (22) surrounding the conductive core (20). An end portion (18a) of the electrical wire (18) is an isolation-free portion for allowing access to the conductive core (20), wherein the end portion (18a) of the electrical wire (18) is connected to the electrical connection part (16). At least one through-hole (24) extending from the first surface (12a) to the second surface (12b) is provided in the substrate (12), wherein the electrical wire (18) is arranged through the through-hole (24).

The present invention relates to an electronic circuit arrangement (10) comprising: a substrate (12) having a first surface (12a) and a second surface (12b), an electronic circuit, an electrical connection part (16) for providing an electrical connection to the electronic circuit and being arranged on the first surface (12a), and at least one electrical wire (18). The electrical wire (18) comprises at least one conductive core (20) and an isolation (22) surrounding the conductive core (20). An end portion (18a) of the electrical wire (18) is an isolation-free portion for allowing access to the conductive core (20), wherein the end portion (18a) of the electrical wire (18) is connected to the electrical connection part (16). At least one through-hole (24) extending from the first surface (12a) to the second surface (12b) is provided in the substrate (12), wherein the electrical wire (18) is arranged through the through-hole (24).

A method includes attaching a micro-coaxial wire to electrical contacts in a substrate, the micro-coaxial wire including a core wire, a bonded section, and a shield layer, the electrical contacts including a first electrical contact and a second electrical contact. Attaching the micro-coaxial wire to the electrical contacts includes connecting a core wire of the micro-coaxial wire to the first electrical contact including forming a bonded section by bonding the core wire to the first electrical contact, and then depositing solder onto the bonded section of the core wire.

A method includes attaching a micro-coaxial wire to electrical contacts in a substrate, the micro-coaxial wire including a core wire, a bonded section, and a shield layer, the electrical contacts including a first electrical contact and a second electrical contact. Attaching the micro-coaxial wire to the electrical contacts includes connecting a core wire of the micro-coaxial wire to the first electrical contact including forming a bonded section by bonding the core wire to the first electrical contact, and then depositing solder onto the bonded section of the core wire.

A semiconductor package structure includes a substrate, and a package preform. The substrate includes a plurality of conductive tracing wires. The package preform includes a semiconductor chip and a plurality of binding wires. The semiconductor chip includes a plurality of welding spots, and the welding spots are electrically connected with corresponding conductive tracing wires by the binding wires. Each binding wire comprises a carbon nanotube composite wire, the carbon nanotube composite wire includes a carbon nanotube wire and a metal layer. The carbon nanotube wire consists of a plurality of carbon nanotubes spirally arranged along an axial direction an axial direction of the carbon nanotube wire.

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as nanowires, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).