A power semiconductor module includes a leadframe having a first die pad, a second die pad separated from the first die pad, a first power lead formed as an extension of the first die pad, a second power lead separated from the first and second die pads, and a first connection region formed as an extension of the second power lead alongside the second die pad. A first plurality of power semiconductor dies is attached to the first die pad and electrically coupled in parallel. A second plurality of power semiconductor dies is attached to the second die pad and electrically coupled in parallel. A first electrical connection extends between the first plurality of power semiconductor dies and the second die pad in a first direction. A second electrical connection extends between the second plurality of power semiconductor dies and the first connection region in the first direction.

A semiconductor device includes: a semiconductor chip; and an Ag fired cap formed so as to cover a source pad electrode formed on the semiconductor chip. The semiconductor chip is disposed on a first substrate electrode, and one end of a Cu wire is bonded onto the Ag fired cap by means of an ultrasonic wave. There is provided a semiconductor device capable of improving a power cycle capability, and a fabrication method of such a semiconductor device.

A semiconductor device includes: a semiconductor chip; and an Ag fired cap formed so as to cover a source pad electrode formed on the semiconductor chip. The semiconductor chip is disposed on a first substrate electrode, and one end of a Cu wire is bonded onto the Ag fired cap by means of an ultrasonic wave. There is provided a semiconductor device capable of improving a power cycle capability, and a fabrication method of such a semiconductor device.

A highly-reliable semiconductor device has improved adhesion between a sealing material and a sealed metal member and/or a case member. In some implementations, the semiconductor device includes: a laminated substrate on which a semiconductor element is mounted; and a sealing material. In some implementations, the sealing material contains an epoxy base resin, a curing agent, and a phosphonic acid.

A highly-reliable semiconductor device has improved adhesion between a sealing material and a sealed metal member and/or a case member. In some implementations, the semiconductor device includes: a laminated substrate on which a semiconductor element is mounted; and a sealing material. In some implementations, the sealing material contains an epoxy base resin, a curing agent, and a phosphonic acid.

A semiconductor package includes a base insulating layer; a semiconductor die attached to a portion of the base insulating layer; and a first continuous lead electrically connected to the semiconductor die. The first continuous lead includes a first lateral extension on a first surface of the base insulating layer, a second lateral extension on a second surface of the base insulating layer, and a connecting portion between the first lateral extension and the second lateral extension. The connecting portion penetrates through the base insulating layer.

A semiconductor package includes a base insulating layer; a semiconductor die attached to a portion of the base insulating layer; and a first continuous lead electrically connected to the semiconductor die. The first continuous lead includes a first lateral extension on a first surface of the base insulating layer, a second lateral extension on a second surface of the base insulating layer, and a connecting portion between the first lateral extension and the second lateral extension. The connecting portion penetrates through the base insulating layer.

A power semiconductor module includes a leadframe having a first die pad, a second die pad separated from the first die pad, a first power lead formed as an extension of the first die pad, a second power lead separated from the first and second die pads, and a first connection region formed as an extension of the second power lead alongside the second die pad. A first plurality of power semiconductor dies is attached to the first die pad and electrically coupled in parallel. A second plurality of power semiconductor dies is attached to the second die pad and electrically coupled in parallel. A first electrical connection extends between the first plurality of power semiconductor dies and the second die pad in a first direction. A second electrical connection extends between the second plurality of power semiconductor dies and the first connection region in the first direction.

A power semiconductor module includes a leadframe having a first die pad, a second die pad separated from the first die pad, a first power lead formed as an extension of the first die pad, a second power lead separated from the first and second die pads, and a first connection region formed as an extension of the second power lead alongside the second die pad. A first plurality of power semiconductor dies is attached to the first die pad and electrically coupled in parallel. A second plurality of power semiconductor dies is attached to the second die pad and electrically coupled in parallel. A first electrical connection extends between the first plurality of power semiconductor dies and the second die pad in a first direction. A second electrical connection extends between the second plurality of power semiconductor dies and the first connection region in the first direction.

A semiconductor device includes: a chip unit, a conductive wire unit, and a cover unit. The chip unit includes a substrate formed with an interconnect structure, and a semiconductor chip disposed on the substrate. The conductive wire unit includes a conductive wire that interconnects the semiconductor chip and the interconnect structure. The cover unit includes a cover member that covers the conductive wire. The cover member includes an insulating layer formed by atomic layer deposition. A method for making the semiconductor device is also disclosed.