An electronic device includes: an insulating substrate including an obverse surface facing a thickness direction; a wiring portion formed on the substrate obverse surface and made of a conductive material; a lead frame arranged on the substrate obverse surface; a first and a second semiconductor elements electrically connected to the lead frame; and a first control unit electrically connected to the wiring portion to operate the first semiconductor element as a first upper arm and operate the second semiconductor element as a first lower arm. The lead frame includes a first pad portion to which the first semiconductor element is joined and a second pad portion to which the second semiconductor element is joined. The first and second pad portions are spaced apart from the wiring portion and arranged in a first direction with a first separation region sandwiched therebetween, where the first direction is orthogonal to the thickness direction. The first control unit is spaced apart from the lead frame as viewed in the thickness direction, while overlapping with the first separation region as viewed in a second direction orthogonal to the thickness direction and the first direction.

Inner leads having die pads having upper surfaces to which semiconductor elements are mounted each have a stepped profile, and surfaces of portions of the inner leads are exposed from a sealing resin in plan view. Outer leads connected to the inner leads have first bends at side surfaces of the sealing resin to extend in a direction on a side of the upper surfaces of the die pads, so that a miniaturized semiconductor device can be obtained.

Inner leads having die pads having upper surfaces to which semiconductor elements are mounted each have a stepped profile, and surfaces of portions of the inner leads are exposed from a sealing resin in plan view. Outer leads connected to the inner leads have first bends at side surfaces of the sealing resin to extend in a direction on a side of the upper surfaces of the die pads, so that a miniaturized semiconductor device can be obtained.

Implementations of semiconductor packages may include a substrate, a first die coupled on the substrate, and a lead frame coupled over the substrate. The lead frame may include a die attach pad. Implementations of semiconductor packages may also include a second die coupled on the die attach pad. The second die may overlap the first die.

Implementations of semiconductor packages may include a substrate, a first die coupled on the substrate, and a lead frame coupled over the substrate. The lead frame may include a die attach pad. Implementations of semiconductor packages may also include a second die coupled on the die attach pad. The second die may overlap the first die.

A terminal case formed by integrally molding a lead frame and a case that has internally an inner face on which the lead frame is mounted and has externally a step portion fixed to a circuit block having an insulating substrate and semiconductor chips formed on the insulating substrate. An opening portion is formed between the step portion and the inner face so as to extend through them, and the opening portion is filled with an adhesive to bond the insulating substrate to the step portion. Since a connecting area to which a bonding wire of the lead frame is ultrasonically bonded is fixed, it is possible to reduce the bonding failures of the lead frames.

A terminal case formed by integrally molding a lead frame and a case that has internally an inner face on which the lead frame is mounted and has externally a step portion fixed to a circuit block having an insulating substrate and semiconductor chips formed on the insulating substrate. An opening portion is formed between the step portion and the inner face so as to extend through them, and the opening portion is filled with an adhesive to bond the insulating substrate to the step portion. Since a connecting area to which a bonding wire of the lead frame is ultrasonically bonded is fixed, it is possible to reduce the bonding failures of the lead frames.

A power semiconductor device includes a frame, a semiconductor element, a substrate, and a sealing resin. The semiconductor element is disposed on the frame. The substrate is disposed on a side of the frame opposite to a side on which the semiconductor element is disposed. The sealing resin seals the semiconductor element and the substrate. The substrate includes a metal sheet, a first insulating sheet on one main surface side of the metal sheet, and a second insulating sheet on the other main surface side of the metal sheet. The metal sheet has flexibility at a normal temperature.

A power semiconductor device includes a frame, a semiconductor element, a substrate, and a sealing resin. The semiconductor element is disposed on the frame. The substrate is disposed on a side of the frame opposite to a side on which the semiconductor element is disposed. The sealing resin seals the semiconductor element and the substrate. The substrate includes a metal sheet, a first insulating sheet on one main surface side of the metal sheet, and a second insulating sheet on the other main surface side of the metal sheet. The metal sheet has flexibility at a normal temperature.

The present invention relates to a curable heat radiation composition which includes two types of fillers with different compressive breaking strengths (except when the two types of fillers are the same substance) and a thermosetting resin, the compressive breaking strength ratio of the two types of fillers [compressive breaking strength of a filler (A) with a higher compressive breaking strength/compressive breaking strength of a filler (B) with a lower compressive breaking strength] being 5 to 1,500, the compressive breaking strength of the filler (A) being 100 to 1,500 MPa, and the compressive breaking strength of the filler (B) being 1.0 to 20 MPa, an adhesive sheet using the composition and a method for producing the same. An aluminum nitride is preferable as the filler (A) and hexagonal boron nitride agglomerated particles are preferable as the filler (B).