A semiconductor device manufacturing method includes a molding step including disposing a control pin between an inlet and a control wire and on a line connecting the inlet and the control wire in a plan view of the semiconductor device, injecting molding resin raw material into a cavity through the inlet, filling the cavity with the molding resin raw material, and sealing a semiconductor chip and a control element disposed on a main current lead frame and a control lead frame. In this way, the flow velocity of the molding resin raw material flowing to the control wire is reduced.

A semiconductor device includes a pre-molded leadframe mounting substrate. The substrate includes a die pad (configured to have a semiconductor die mounted thereon) and a first electrically conductive pad and a second electrically conductive pad. A strip of insulating material is molded between the first and second electrically conductive pads to provide a mutually electrically insulation and extends in a longitudinal direction with the first electrically conductive pad and the second electrically conductive pad lying on opposite sides of the strip of insulating material. A semiconductor die is arranged on the die pad in register with the strip of insulating material. A single electrically conductive ribbon extending in register with the strip of insulating material electrically couples the semiconductor die with both the first and second electrically conductive pads to provide a common current flow path from the semiconductor die towards the first and the second electrically conductive pads.

Provided is a package-on-package (PoP). The PoP includes a lower package, an upper package on the lower package, an interposer substrate disposed between the lower package and the upper package, and a plurality of balls connecting the interposer substrate to the upper package, in which the lower package includes a first substrate, and a first die and a second die disposed side by side in a horizontal direction, on the first substrate, in which the upper package includes a second substrate, a third die on the second substrate, and a plurality of ball pads disposed on a surface of the second substrate, the interposer substrate comprises on a surface thereof a plurality of ball lands to which a plurality of balls are attached, and at least some of the plurality of ball lands overlap the first die and the second die in a vertical direction that intersects the horizontal direction.

This disclosure discloses a light-emitting bulb. The light-emitting bulb includes a cover, an electrical associated with the cover, a board arranged between the cover and the electrical connector, and a first light-emitting device disposed on the board. The first light-emitting device includes a carrier having a first side and a second side, a first electrode part disposed near the first side and extending to the second side, a bended part disposed near to the second side and spaced apart from the first electrode part, and a second electrode part extending from the bended part to the first side. No light-emitting diode unit is arranged on the second electrode part.

A pressure sensor element and a receiving circuit are formed on an IC chip. A transmitting circuit and a piezoelectric element of an actuator are respectively formed on a transmitting chip and a piezoelectric chip. The piezoelectric chip and the pressure sensor face each other separated by a distance in an airtight first space surrounded by a package main body and a base substrate. Dielectric breakdown voltage of signal transmission from the primary side to the secondary side is set by the distance. The first space is a pressure propagation region including an insulating medium capable of transmitting vibrations of the piezoelectric element as pressure. The signal transmission is performed with high insulation by the pressure generated in the pressure propagation region between components integrated in a single module by insulating the primary side and the secondary side from each other by the insulating medium of the pressure propagation region.

A semiconductor device includes: a thick copper member in which a semiconductor chip is mounted; a printed circuit board that is disposed on a front surface of the thick copper member and provided with an opening exposing a part of the front surface of the thick copper member, a wiring pattern, and conductive vias connecting the pattern and the thick copper member; a semiconductor chip mounted on the front surface of the thick copper member exposed through the opening and connected to the pattern by a metal wire; an electronic component mounted on a front surface of the printed circuit board opposite to a side facing the thick copper member and connected to the pattern; and a cap or an epoxy resin sealing the front surface of the printed circuit board opposite to a side facing the thick copper member, the chip, the component, and the metal wire.

Disclosed are a leadframe, a bracket and an LED device. The leadframe includes a first photo-etched metal part, having a first electrode and a chip placement layer thereon, which has a greater length for short and long edges than those of the first electrode; and a second photo-etched metal part, composed of a second electrode and a connection layer thereon, which has a greater length for short and long edges than those of the second electrode; wherein a first long edge of the chip placement layer is flush with a first long edge of the first electrode, and a first long edge of the connection layer is flush with a first long edge of the second electrode; and wherein the chip placement layer and the connection layer are provided with L-shaped pins at corners of their first long edges to cover sidewalls of the corresponding corners.

A semiconductor device includes a switching element, a control circuit, and a first and second temperature detectors. The control circuit controls the switching element and have an overcurrent detection circuit for the switching element. The first temperature detector detects the temperature of the switching element and the second temperature detector detects the temperature of the control circuit. The control circuit includes a reference correction circuit for correcting an overcurrent reference value of the overcurrent detection circuit on the basis of a first detection value and a second detection value detected by the first and second temperature detectors and outputting a corrected overcurrent reference value.

In one form, a method of manufacturing a circuit device comprises providing a lead frame comprising a plurality of leads, each comprising an island portion, a bonding portion elevated from the island portion, a slope portion extending obliquely so as to connect the island portion and the bonding portion, and a lead portion extending from the bonding portion. First and second transistors and first and second diodes are mounted upper surfaces of island portions of respective first and second leads, and are connected to the respective leads through wirings that connect the transistors and diodes to the bonding portions of the respective leads. Lower surfaces of the island portions are attached to an upper surface of a circuit board, and the circuit board, the transistors, the diodes, and the lead frame are encapsulated by a resin, so that the lead portions are not covered by the resin.

A semiconductor device includes an electronic component that includes an oscillator and has terminals on one face. A semiconductor chip is electrically connected to the electronic component and also includes terminals on one face thereof. The electronic component and the semiconductor chip are mounted to a mounting base such that the terminals of the electronic component and the terminals of the semiconductor chip face in the same direction. First bonding wires are connected to the terminals of the semiconductor chip, and second bonding wires having an apex height smaller than that of the first bonding wires connect the terminals of the electronic component to the terminals of the semiconductor chip. A sealing member completely seals within at least the electronic component.