Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components may further be configured to control application of RF energy in cycles between high and low powers. The power amplifier electronics may include a semiconductor die on which one or more RF power transistors are fabricated, an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and bonding ribbon bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network. The bonding ribbon may have a width of greater than about five times a thickness of the bonding ribbon.

Technologies for radiofrequency optimized interconnects for a quantum processor are disclosed. In the illustrative embodiment, signals are carried in coplanar waveguides on a surface of a quantum processor die. A ground ring surrounds the signals and is connected to the ground conductors of each coplanar waveguide. Wire bonds connect the ground ring to a ground of a circuit board. The wire bonds provide both an electrical connection from the quantum processor die to the circuit board as well as increased thermal coupling between the quantum processor die and the circuit board, increasing cooling of the quantum processor die.

An X-ray source is disposed and a detector is disposed adjacent to the X-ray source. A test specimen holder is disposed between the X-ray source and the detector. A filter is disposed between the X-ray source and the test specimen holder. The filter has a plate-shaped semiconductor, a granular semiconductor, or a combination thereof.

A amplifier device includes an amplifier, a coupling circuit, and a filter circuit. The amplifier amplifies a high frequency signal, and outputs to signal output ports the high frequency signal. The coupling circuit is provided side-by-side with the amplifier in a first direction on a substrate, connected to the signal output ports, and configured to couple output signals and output one output signal to an output terminal. The filter circuit is provided on the substrate and connected to the coupling circuit, and configured to reduce third-order IMD included in the one output signal. The one output signal is output from a middle of the substrate in a second direction intersecting with the first direction, and the filter circuit is arranged next to an edge of the substrate in the second direction, and arranged next to an edge of the substrate on the output terminal side in the first direction.

A semiconductor module includes first to fourth semiconductor elements, each having an upper-surface electrode and a lower-surface electrode, first to fourth conductive layers, each extending in a first direction and being independently disposed side by side in a second direction orthogonal to the first direction, and an output terminal connected to the second and third conductive layers. The lower-surface electrodes of each of the first to fourth semiconductor elements are respectively conductively connected to the first to fourth conductive layers. The third conductive layer and the fourth conductive layer are disposed between the first conductive layer and the second conductive layer and are connected to the output terminal to have an equal potential.

An electric circuit in which a first switching element and a first diode element are connected in antiparallel to form an upper arm and a second semiconductor element and a second diode element are connected in antiparallel to form a lower arm, and the upper arm and the lower arm are connected in series. A gate current path in one of the upper and lower arms and a reverse recovery path in the other one of the upper and lower arms are disposed close enough and extend at least partially in parallel to each other, so as to generate mutual inductance by the reverse recovery current flowing through the reverse recovery path and the gate current flowing through the gate current path.

An X-ray source is disposed and a detector is disposed adjacent to the X-ray source. A test specimen holder is disposed between the X-ray source and the detector. A filter is disposed between the X-ray source and the test specimen holder. The filter has a plate-shaped semiconductor, a granular semiconductor, or a combination thereof.

An amplifier includes a transistor chip including a plurality of transistor cells, a gate pad, and a drain pad, a matching substrate having a surface on which a metal pattern is formed, a terminal with a width larger than a width of the transistor chip and than a width of the matching substrate, a plurality of terminal wires connecting the terminal to the metal pattern, and a plurality of chip wires connecting the metal pattern to the transistor chip. Inter-wire distances of portions of the plurality of terminal wires connected to the metal pattern are larger than inter-wire distances between portions of the plurality of terminal wires connected to the terminal.

A high frequency package includes a package having an input terminal and an output terminal. A substrate housed in the package, has a first side, a second side facing the input terminal, and a third side facing the output terminal. The first side extends in a first direction and connects the second side and the third side, and the second side and the third side extend in a second direction intersecting the first direction. A coupling circuit on the substrate is electrically connected to the input terminal and the output terminal to input an input signal from the input terminal disposed at the second side of the substrate and output an output signal to the output terminal disposed at the third side of the substrate. A filter circuit on the substrate is electrically connected to the coupling circuit, an is configured to reduce third-order IMD (Inter Modulation Distortion) included in the output signal. The output signal is output from the coupling circuit in a middle of the output terminal side of the third side of the substrate. The filter circuit is arranged on an edge of the first side of the substrate, and an edge of the third side of the substrate.

A high frequency package includes a package having an input terminal and an output terminal. A substrate housed in the package, has a first side, a second side facing the input terminal, and a third side facing the output terminal. The first side extends in a first direction and connects the second side and the third side, and the second side and the third side extend in a second direction intersecting the first direction. A coupling circuit on the substrate is electrically connected to the input terminal and the output terminal to input an input signal from the input terminal disposed at the second side of the substrate and output an output signal to the output terminal disposed at the third side of the substrate. A filter circuit on the substrate is electrically connected to the coupling circuit, an is configured to reduce third-order IMD (Inter Modulation Distortion) included in the output signal. The output signal is output from the coupling circuit in a middle of the output terminal side of the third side of the substrate. The filter circuit is arranged on an edge of the first side of the substrate, and an edge of the third side of the substrate.