Methods and apparatus for providing an interconnection including a stack of wirebond balls having a selected impedance. The wirebond balls may have a size, which may comprise a radius, configured for the selected impedance. The stack may comprise a number of wirebond balls configured for the selected impedance and/or may comprise a material selected for the selected impedance. In embodiments, the selected impedance is primarily resistive (e.g., 50 Ohms), such that the overall reactance is minimized.

The present disclosure is directed to a semiconductor die with multiple contact pads electrically coupled to a single lead via a single wire, and methods for fabricating the same. In one or more embodiments, multiple contact pads are electrically coupled to each other by a plurality of conductive layers stacked on top of each other. The uppermost conductive layer is then electrically coupled to a single lead via a single wire.

A semiconductor package includes a conductive pad, a semiconductor die with an aluminum bond pad over a dielectric layer of the semiconductor die, a gold bump on the aluminum bond pad, a first intermetallic layer of gold and aluminum between the aluminum bond pad and the gold bump, a copper ball bond on the gold bump, a second intermetallic layer of copper and gold between the copper ball bond and the gold bump, a copper wire extending from the copper ball bond to the conductive pad, a stitch bond between the copper wire and the conductive pad.

In examples, a semiconductor package comprises a bond pad surface layer, a second conductive layer positioned below the bond pad surface layer, and a perforated plate positioned between and abutting the bond pad surface layer and the second conductive layer. The perforated plate has a monolithic conductive member and multiple insulation members embedded within the conductive member, the insulation members having thicknesses approximately equivalent to that of the conductive member. The package also includes a semiconductor substrate including a circuit, the semiconductor substrate positioned below the second conductive layer.

A semiconductor package is provided. The semiconductor package includes: a mounting substrate including at least one bonding pad; a first semiconductor chip disposed on the mounting substrate, and including a first protrusion on one side of the first semiconductor chip; a first spacer ball electrically connected to the first semiconductor chip; a first bump ball electrically connected to the first spacer ball; and a first wire which electrically connects the first bump ball and the bonding pad without contacting the first protrusion, wherein the first wire includes a first portion extending in a direction away from the bonding pad, and a second portion extending in a direction approaching the bonding pad.

A multi-chip package includes a package substrate including a first substrate pad, a first group of semiconductor chips stacked on the package substrate, each of the first group of the semiconductor chips including bonding pads, first stud bumps arranged on the bonding pads of the first group of the semiconductor chips except for a lowermost semiconductor chip in the first group, a first conductive wire downwardly extended from the bonding pad of the lowermost semiconductor chip in the first group and connected to the first substrate pad, and a second conductive wire upwardly extended from the bonding pad of the lowermost semiconductor chip in the first group and sequentially connected to the first stud bumps.

Embodiments of packaged semiconductor devices and methods of making thereof are provided herein, which include a semiconductor die having a plurality of pads on an active side; a dummy die having a plurality of openings that extend from a first major surface to a second major surface opposite the first major surface, wherein the plurality of openings are aligned with the plurality of pads; and a silicone-based glue attaching the dummy die to the active side of the semiconductor die, wherein a plurality of bondable surfaces of the semiconductor die are exposed through the plurality of openings of the dummy die.

The present disclosure is directed to a semiconductor die with multiple contact pads electrically coupled to a single lead via a single wire, and methods for fabricating the same. In one or more embodiments, multiple contact pads are electrically coupled to each other by a plurality of conductive layers stacked on top of each other. The uppermost conductive layer is then electrically coupled to a single lead via a single wire.

Embodiments of packaged semiconductor devices and methods of making thereof are provided herein, which include a semiconductor die having a plurality of pads on an active side; a dummy die having a plurality of openings that extend from a first major surface to a second major surface opposite the first major surface, wherein the plurality of openings are aligned with the plurality of pads; and a silicone-based glue attaching the dummy die to the active side of the semiconductor die, wherein a plurality of bondable surfaces of the semiconductor die are exposed through the plurality of openings of the dummy die.

A semiconductor package is provided. The semiconductor package includes: a mounting substrate including at least one bonding pad; a first semiconductor chip disposed on the mounting substrate, and including a first protrusion on one side of the first semiconductor chip; a first spacer ball electrically connected to the first semiconductor chip; a first bump ball electrically connected to the first spacer ball; and a first wire which electrically connects the first bump ball and the bonding pad without contacting the first protrusion, wherein the first wire includes a first portion extending in a direction away from the bonding pad, and a second portion extending in a direction approaching the bonding pad.