A semiconductor package includes a conductive pad, a semiconductor die with an aluminum bond pad over a dielectric layer of the semiconductor die, a gold bump on the aluminum bond pad, a first intermetallic layer of gold and aluminum between the aluminum bond pad and the gold bump, a copper ball bond on the gold bump, a second intermetallic layer of copper and gold between the copper ball bond and the gold bump, a copper wire extending from the copper ball bond to the conductive pad, a stitch bond between the copper wire and the conductive pad.

A semiconductor package includes a conductive pad, a semiconductor die with an aluminum bond pad over a dielectric layer of the semiconductor die, a gold bump on the aluminum bond pad, a first intermetallic layer of gold and aluminum between the aluminum bond pad and the gold bump, a copper ball bond on the gold bump, a second intermetallic layer of copper and gold between the copper ball bond and the gold bump, a copper wire extending from the copper ball bond to the conductive pad, a stitch bond between the copper wire and the conductive pad.

A semiconductor package may include: a base layer; first to Nth semiconductor chips (N is a natural number of 2 or more) sequentially offset stacked over the base layer so that a chip pad portion of one side edge region is exposed, wherein the chip pad portion includes a chip pad and includes a redistribution pad that partially contacts the chip pad and extends away from the chip pad; and a bonding wire connecting the chip pad of a kth semiconductor chip among the first to Nth semiconductor chips to the redistribution pad of a k−1th semiconductor chip or a k+1th semiconductor chip when k is a natural number greater than 1 and the bonding wire connecting the chip pad of the kth semiconductor chip to a pad of the base layer or the redistribution pad of the k−1th semiconductor chip when k is 1.

The present disclosure is directed to a semiconductor die with multiple contact pads electrically coupled to a single lead via a single wire, and methods for fabricating the same. In one or more embodiments, multiple contact pads are electrically coupled to each other by a plurality of conductive layers stacked on top of each other. The uppermost conductive layer is then electrically coupled to a single lead via a single wire.

A semiconductor device includes an integrated circuit die having bond pads and a bond wires. The bond wires are connected to respective ones of the bond pads by a ball bond. An area of contact between the ball bond and the bond pad has a predetermined shape that is non-circular and includes at least one axis of symmetry. A ratio of the ball bond length to the ball bond width may be equal to a ratio of the bond pad length to the bond pad width.

A multi-chip package may include a package substrate including a first substrate pad and a second substrate pad, first semiconductor chips stacked on the package substrate in a steplike shape along a first direction, second semiconductor chips stacked on the first semiconductor chips in a steplike shape along a second direction opposite the first direction, first pad wires electrically connecting first bonding pads of the first semiconductor chips with each other, second pad wires electrically connecting second bonding pads of the second semiconductor chips with each other, a first substrate wire electrically connecting the first substrate pad with a first bonding pad of any one among the first semiconductor chips except for a lowermost first semiconductor chip, and a second substrate wire electrically connecting the second substrate pad with a second bonding pad of any one among the second semiconductor chips except for a lowermost second semiconductor chip.

A semiconductor package may include: a base layer; first to Nth semiconductor chips (N is a natural number of 2 or more) sequentially offset stacked over the base layer so that a chip pad portion of one side edge region is exposed, wherein the chip pad portion includes a chip pad and includes a redistribution pad that partially contacts the chip pad and extends away from the chip pad; and a bonding wire connecting the chip pad of a kth semiconductor chip among the first to Nth semiconductor chips to the redistribution pad of a k−1th semiconductor chip or a k+1th semiconductor chip when k is a natural number greater than 1 and the bonding wire connecting the chip pad of the kth semiconductor chip to a pad of the base layer or the redistribution pad of the k−1th semiconductor chip when k is 1.

A semiconductor package may include: a base layer; first to Nth semiconductor chips (N is a natural number of 2 or more) sequentially offset stacked over the base layer so that a chip pad portion of one side edge region is exposed, wherein the chip pad portion includes a chip pad and includes a redistribution pad that partially contacts the chip pad and extends away from the chip pad; and a bonding wire connecting the chip pad of a kth semiconductor chip among the first to Nth semiconductor chips to the redistribution pad of a k−1th semiconductor chip or a k+1th semiconductor chip when k is a natural number greater than 1 and the bonding wire connecting the chip pad of the kth semiconductor chip to a pad of the base layer or the redistribution pad of the k+1th semiconductor chip when k is 1.

A groove is formed between an inner peripheral edge of an opening of a pad electrode and an outer peripheral edge of a bonding region located inside the pad electrode in plan view.

The present disclosure is directed to a semiconductor die with multiple contact pads electrically coupled to a single lead via a single wire, and methods for fabricating the same. In one or more embodiments, multiple contact pads are electrically coupled to each other by a plurality of conductive layers stacked on top of each other. The uppermost conductive layer is then electrically coupled to a single lead via a single wire.