A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

In a copper alloy bonding wire for semiconductor devices, the bonding longevity of a ball bonded part under high-temperature and high-humidity environments is improved. The copper alloy bonding wire for semiconductor devices includes in total 0.03% by mass or more to 3% by mass or less of at least one or more kinds of elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (first element), with the balance Cu and inevitable impurities. The inclusion of a predetermined amount of the first element suppresses production of an intermetallic compound susceptible to corrosion under high-temperature and high-humidity environments at the wire bonding interface and improves the bonding longevity of a ball bonded part.

A semiconductor device includes a substrate, a semiconductor chip, a plurality of bonding pads on a surface of the semiconductor chip, a plurality of probe pads on a surface of the semiconductor chip, a plurality of connection pads on a surface of the substrate, and a plurality of bonding wires that electrically connect the bonding pads and the connection pads. The plurality of bonding pads include a first bonding pad and a second bonding pad, the plurality of probe pads include a first probe pad and a second probe pad, and a part of the first probe pad is disposed between the second bonding pad and the second probe pad.

A semiconductor device includes: a semiconductor chip; and an Ag fired cap formed so as to cover a source pad electrode formed on the semiconductor chip. The semiconductor chip is disposed on a first substrate electrode, and one end of a Cu wire is bonded onto the Ag fired cap by means of an ultrasonic wave. There is provided a semiconductor device capable of improving a power cycle capability, and a fabrication method of such a semiconductor device.

A semiconductor device has a semiconductor die and substrate with a plurality of stud bumps formed over the semiconductor die or substrate. The stud bumps include a base portion and stem portion extending from the base portion. The stud bumps include a non-fusible material or fusible material. The semiconductor die is mounted to the substrate with the stud bumps electrically connecting the semiconductor die to the substrate. A width of the base portion is greater than a mating conductive trace formed on the substrate. Alternatively, a vertical interconnect structure, such as a conductive column, is formed over the semiconductor die or substrate. The conductive column can have a tapered sidewall or oval cross sectional area. An underfill material is deposited between the semiconductor die and substrate. The semiconductor die includes a flexible property. The vertical interconnect structure includes a flexible property. The substrate includes a flexible property.

A semiconductor device has a semiconductor die and substrate with a plurality of stud bumps formed over the semiconductor die or substrate. The stud bumps include a base portion and stem portion extending from the base portion. The stud bumps include a non-fusible material or fusible material. The semiconductor die is mounted to the substrate with the stud bumps electrically connecting the semiconductor die to the substrate. A width of the base portion is greater than a mating conductive trace formed on the substrate. Alternatively, a vertical interconnect structure, such as a conductive column, is formed over the semiconductor die or substrate. The conductive column can have a tapered sidewall or oval cross sectional area. An underfill material is deposited between the semiconductor die and substrate. The semiconductor die includes a flexible property. The vertical interconnect structure includes a flexible property. The substrate includes a flexible property.

Methods, systems, and apparatuses for preventing corrosion between dissimilar bonded metals. The method includes providing a wafer having a plurality of circuits, each of the plurality of circuits having a plurality of bond pads including a first metal; applying a coating onto at least the plurality of bond pads; etching a hole in the coating on each of the plurality of bond pads to provide an exposed portion of the plurality of bond pads; dicing the wafer to separate each of the plurality of circuits; die bonding each of the plurality of circuits to a respective packaging substrate; and performing a bonding process to bond a second, dissimilar metal to the exposed portion of each of the plurality of bond pads such that the second, dissimilar metal encloses the hole in the coating of each of the plurality of bond pads, thereby enclosing the exposed portion.

Methods, systems, and apparatuses for preventing corrosion between dissimilar bonded metals. The method includes providing a wafer having a plurality of circuits, each of the plurality of circuits having a plurality of bond pads including a first metal; applying a coating onto at least the plurality of bond pads; etching a hole in the coating on each of the plurality of bond pads to provide an exposed portion of the plurality of bond pads; dicing the wafer to separate each of the plurality of circuits; die bonding each of the plurality of circuits to a respective packaging substrate; and performing a bonding process to bond a second, dissimilar metal to the exposed portion of each of the plurality of bond pads such that the second, dissimilar metal encloses the hole in the coating of each of the plurality of bond pads, thereby enclosing the exposed portion.

A wire bonding method includes steps of: forming a Free Air Ball (FAB) at an end of a metal wire; pressing the FAB onto a flat surface of a workpiece to deform the FAB; contacting the deformed FAB to a metal pad, wherein the metal pad is made of a first material and the metal wire is made of a second material, and a hardness of the first material is smaller than a hardness of the second material; and bonding the deformed FAB on the metal pad.