Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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2224/00
Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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H01L2224/01
Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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H01L2224/42
Wire connectors; Manufacturing methods related thereto
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H01L2224/47
Structure, shape, material or disposition of the wire connectors after the connecting process
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H01L2224/48
of an individual wire connector
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H01L2224/48599
Principal constituent of the connecting portion of the wire connector being Gold (Au)
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H01L2224/486
with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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H01L2224/48638
the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/48657
Cobalt (Co) as principal constituent
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H01L2224/48657

Thin NiB or CoB capping layer for non-noble metallic bonding landing pads
10066303 · 2018-09-04 · ·

The invention relates to a substrate having at least one main surface comprising at least one non-noble metallic bonding landing pad covered by a capping layer thereby shielding the non-noble metallic bonding landing pad from the environment. This capping layer comprises an alloy, the alloy being NiB or CoB and containing an atomic concentration percentage of boron in the range of 10% to 50%.

Thin NiB or CoB capping layer for non-noble metallic bonding landing pads
10066303 · 2018-09-04 · ·

The invention relates to a substrate having at least one main surface comprising at least one non-noble metallic bonding landing pad covered by a capping layer thereby shielding the non-noble metallic bonding landing pad from the environment. This capping layer comprises an alloy, the alloy being NiB or CoB and containing an atomic concentration percentage of boron in the range of 10% to 50%.