Provided is a wire bonding method capable of suppressing the occurrence of wire breakage. One aspect of the present invention provides a wire bonding method for bringing a capillary and a wire 1 inserted through the capillary into pressure contact with a second bonding point 16 of a lead placed on an XY stage to bond the wire to the lead, including moving the XY stage in a state in which the capillary is in pressure contact with the lead to move the capillary along a movement locus including a plurality of arc portions.

A wire bonding method includes bringing a capillary and a wire inserted through the capillary into pressure contact with a bonding point of a lead placed on an XY stage to bond the wire to the lead, including moving the XY stage in a state in which the capillary is in pressure contact with the lead to move the capillary along a movement locus including a plurality of arc portions.

A semiconductor device manufacturing method includes: raising and moving a bonding tool, while paying out a wire, in a direction from a second toward a first bonding point to form in the wire a cut portion bent in a vicinity of the second bonding point; lowering and moving a tip of the bonding tool to the cut portion; lowering the bonding tool vertically to thin the cut portion; raising the bonding tool while paying out the wire; and moving the bonding tool in a direction away from the first and second bonding points and along a wire direction connecting the first and second bonding points and then cutting the wire at the cut portion to form a wire tail. This allows the length of the wire tail to be adjusted easily and efficiently to be constant.