A method and apparatus for wafer bonding. The method includes that, a first position parameter of a first alignment mark on a first wafer is determined by using a optical beam; a second position parameter of a second alignment mark on a second wafer is determined with the optical beam, the optical beam has a property of transmitting through a wafer; a relative position between the first wafer and the second wafer is adjusted with the optical beam according to the first position parameter and the second position parameter until the relative position between the first alignment mark and the second alignment mark satisfies a predetermined bonding condition; and the first wafer is bonded to the second wafer.

A flip-chip bonding method includes following operations. A wafer is provided with multiple semiconductor dies on an adhesive film held by a frame element. A semiconductor die is lifted up from the wafer by an ejector element. The semiconductor die is picked up with a collector element. The semiconductor die is flip-chipped with the collector element. An alignment check is performed to determine a position of the semiconductor die, so as to determine a process tolerance between a center of the collector element and a center of the semiconductor die. The semiconductor die with the collector element is transferred to a location underneath a bonder element based on the process tolerance of the alignment check. The semiconductor die is picked up from the collector element by the bonder element. The semiconductor die is bonded to a carrier by the bonder element.

A bonding system includes a substrate transfer device configured to transfer a first substrate and a second substrate to a bonding apparatus, a first holding plate configured to hold the first substrate from an upper surface side, and a second holding plate disposed below the first holding plate and configured to hold the second substrate from a lower surface side so that the second substrate faces the first substrate. The substrate transfer device includes a first holding part capable of holding the first substrate from the upper surface side, and a second holding part disposed below the first holding part and capable of holding the second substrate from the lower surface side. The first holding part and the second holding part are configured to receive and hold the first substrate and the second substrate at the same time from the first holding plate and the second holding plate.

A new architecture to fabricate high-rise fully monolithic three-dimensional Integrated-Circuits (3D-ICs) is described. It has the major advantage over all known prior arts in that it substantially reduces RC-delays and fully eliminates or very substantially reduces the large and bulky electrically conductive Through-Silicon-VIAS in a monolithic 3D integration. This enables the 3D-ICs to have faster operational speed with denser device integration.

A method and apparatus for wafer bonding. The method includes that, a first position parameter of a first alignment mark on a first wafer is determined by using a optical beam; a second position parameter of a second alignment mark on a second wafer is determined with the optical beam, the optical beam has a property of transmitting through a wafer; a relative position between the first wafer and the second wafer is adjusted with the optical beam according to the first position parameter and the second position parameter until the relative position between the first alignment mark and the second alignment mark satisfies a predetermined bonding condition; and the first wafer is bonded to the second wafer.

A flexible display panel, a display device and a bonding method thereof are provided. The flexible display panel includes a plurality of fan-out leads arranged along a first direction and disposed in a fan-out region; virtual extension lines of the fan out leads at least disposed in lateral regions of the fan-out region are intersected at a first junction point on a reference line perpendicular to the first direction; a chip on film includes a plurality of pads being arranged along the first direction and in one-to-one correspondence with the fan-out leads; and virtual extension lines of the pads, which at least correspond to the fan-out leads disposed in the lateral regions, are intersected at a second junction point on the reference line.

An apparatus for wafer bonding includes a first bearing table configured to hold a first wafer provided with at least one first alignment mark; a second bearing table, opposite to the first bearing table, and configured to hold a second wafer provided with at least one second alignment mark; an alignment component, located on at least a side of the first or second bearing table, and configured to determine first and second position parameters of the first and second alignment marks, respectively, by using an optical beam; a mobile component, connected to the first and second bearing tables, and configured to adjust, according to the first an second position parameters, a relative position between the first and second wafers until a relative position between the first and second alignment marks satisfies a predetermined bonding condition; and a bonding component, connected to the first and second bearing tables, and configured to bond the first wafer to the second wafer.

Method to fabricate high-rise three-dimensional Integrated-Circuits (3D-ICs) is described. It has the major advantage over all the other known methods and prior arts to fabricate or manufacture 3D-ICs in that it substantially reduces RC-delays and fully eliminates or very substantially reduces the large and bulky electrically conductive Through-Silicon-VIAs in monolithic 3D integration. This enables the 3D-ICs to have faster operational speed with denser device integration.

A flexible display panel, a display device and a bonding method thereof are provided. The flexible display panel includes a plurality of fan-out leads arranged along a first direction and disposed in a fan-out region; virtual extension lines of the fan out leads at least disposed in lateral regions of the fan-out region are intersected at a first junction point on a reference line perpendicular to the first direction; a chip on film includes a plurality of pads being arranged along the first direction and in one-to-one correspondence with the fan-out leads; and virtual extension lines of the pads, which at least correspond to the fan-out leads disposed in the lateral regions, are intersected at a second junction point on the reference line.

A bonding system includes a substrate transfer device configured to transfer a first substrate and a second substrate to a bonding apparatus, a first holding plate configured to hold the first substrate from an upper surface side, and a second holding plate disposed below the first holding plate and configured to hold the second substrate from a lower surface side so that the second substrate faces the first substrate. The substrate transfer device includes a first holding part capable of holding the first substrate from the upper surface side, and a second holding part disposed below the first holding part and capable of holding the second substrate from the lower surface side. The first holding part and the second holding part are configured to receive and hold the first substrate and the second substrate at the same time from the first holding plate and the second holding plate.