This application relates to semiconductor manufacturing, and more particularly to an interconnect structure for semiconductors with an ultra-fine pitch and a forming method thereof. The forming method includes: preparing copper nanoparticles using a vapor deposition device, where coupling parameters of the vapor deposition device are adjusted to control an initial particle size of the copper nanoparticles; depositing the copper nanoparticles on a substrate; invertedly placing a chip with copper pillars as I/O ports on the substrate; and subjecting the chip and the substrate to hot-pressing sintering to enable the bonding.

A sensor array and a read-out circuit are prepared. The sensor array and the read-out circuit are aligned such that each first electrode and each second electrode face each other in a state where a connection material is disposed between a second area of the sensor array and a fourth area of the read-out circuit. The read-out circuit is pressed against the sensor array with a first load such that the sensor array and the readout circuit are bonded by the connection material with a gap provided between each first electrode and each second electrode. The read-out circuit is pressed against the sensor array with a second load larger than the first load so that each first electrode and each second electrode are connected. Before the pressing with the second load, either one of the first electrode and the second electrode has a conical shape.

A die stack that includes a first chip die, a second chip die connected to the first chip die by one or more controlled collapse chip connection (“C4”) solder bump bonds, and a spacer die interposed between the first and second chip dies. The spacer die includes through holes for the one or more C4 solder bumps, and has a thickness such that when the first and second chip dies are compressed into contact with the spacer die, the spacer die thickness is a minimum defined spacing between the first and second chip dies, and the spacer die operates as a hard stop against compression of the die stack after the first and second chip dies are compressed into contact with the spacer die.

A transfer method includes providing a first light emitting diode on a first substrate, performing a partial laser liftoff of the first light emitting diode from the first substrate, laser bonding the first light emitting diode to the backplane after performing the partial laser liftoff, and separating the first substrate from the first light emitting diode after the laser bonding.

A transfer method includes providing a first light emitting diode on a first substrate, performing a partial laser liftoff of the first light emitting diode from the first substrate, laser bonding the first light emitting diode to the backplane after performing the partial laser liftoff, and separating the first substrate from the first light emitting diode after the laser bonding.

A device (2) is formed on a main surface of a substrate (1). The main surface of the substrate (1) is bonded to the undersurface of the counter substrate (14) via the bonding member (11,12,13) in a hollow state. A circuit (17) and a bump structure (26) are formed on the top surface of the counter substrate (14). The bump structure (26) is positioned in a region corresponding to at least the bonding member (11,12,13), and has a higher height than that of the circuit (17).

An electronic device and a method for producing an electronic device are disclosed. In an embodiment the electronic device includes a first component and a second component and a sinter layer connecting the first component to the second component, the sinter layer comprising a first metal, wherein at least one of the components comprises at least one contact layer which is arranged in direct contact with the sinter layer, which comprises a second metal different from the first metal and which is free of gold.

An electronic device and a method for producing an electronic device are disclosed. In an embodiment the electronic device includes a first component and a second component and a sinter layer connecting the first component to the second component, the sinter layer comprising a first metal, wherein at least one of the components comprises at least one contact layer which is arranged in direct contact with the sinter layer, which comprises a second metal different from the first metal and which is free of gold.

This application relates to semiconductor manufacturing, and more particularly to an interconnect structure for semiconductors with an ultra-fine pitch and a forming method thereof. The forming method includes: preparing copper nanoparticles using a vapor deposition device, where coupling parameters of the vapor deposition device are adjusted to control an initial particle size of the copper nanoparticles; depositing the copper nanoparticles on a substrate; invertedly placing a chip with copper pillars as I/O ports on the substrate; and subjecting the chip and the substrate to hot-pressing sintering to enable the bonding.

A semiconductor assembly packaging method, a semiconductor assembly and an electronic device are provided. The method comprises providing an interconnect board and at least one semiconductor device; aligning and attaching the at least one semiconductor device to the interconnect board by forming a plurality of alignment solder joints; applying pressure to the at least one semiconductor device and/or the interconnect board while the alignment solder joints are in a molten or partially molten state, whereby first connection terminals on the interconnect board are joined with and bonded to corresponding second connection terminals on the at least one semiconductor device. Using the packaging method, the semiconductor device and the interconnect board can be aligned accurately using relatively simple and low cost processes and equipment. The method can also be used to align and bond at least one semiconductor device to another semiconductor device.