Provided is a semiconductor device including electronic components electrically joined to each other via a metal nanoparticle sintered layer, wherein the metal nanoparticle sintered layer has formed therein a metal diffusion region in which a metal constituting a metallization layer formed on a surface of one of the electronic components is diffused, and in which the metal is present in an amount of 10 mass % or more and less than 100 mass % according to TEM-EDS analysis, and wherein the metal diffusion region has a thickness smaller than a thickness of the metallization layer.

A method and apparatus for laterally urging two semiconductor chips, dies or wafers into an improved state of registration with each other, the method and apparatus employing microstructures comprising: a first microstructure disposed on a first major surface of a first one of said two semiconductor chips, dies or wafers, wherein the first microstructure includes a sidewall which is tapered thereby disposing it at an acute angle compared to a perpendicular of said first major surface, and a second microstructure disposed on a first surface of a second one of said two semiconductor chips, dies or wafers, wherein the shape of the second microstructure is complementary to, and mates with or contacts, in use, the first microstructure, the second microstructure including a surface which contacts said sidewall when the first and second microstructures are mated or being mated, the sidewall of the first microstructure and the surface of the second microstructure imparting a lateral force for urging the two semiconductor chips, dies or wafers into said improved state of registration.

Embodiments described herein provide techniques for forming an interconnect structure that includes a bowl shaped pad. Such embodiments can assist with improving interconnect joint reliability when compared to conventional pads that have a flat surface. An interconnect structure may comprise: a substrate (e.g., a semiconductor package, a PCB, etc.); and a metal pad over the substrate. The metal pad has a center region and an edge region. A thickness of the center region is smaller than a thickness of the edge region. A thickness of the center region may be non-uniform. The center region may have a bowl shape characterized by a stepped profile. The stepped profile is formed from metal layers arranged as steps. Alternatively, or additionally, the center region may have a bowl shape characterized by a curved profile. A pattern may be formed on or in a surface of the metal pad.

This application relates to semiconductor manufacturing, and more particularly to an interconnect structure for semiconductors with an ultra-fine pitch and a forming method thereof. The forming method includes: preparing copper nanoparticles using a vapor deposition device, where coupling parameters of the vapor deposition device are adjusted to control an initial particle size of the copper nanoparticles; depositing the copper nanoparticles on a substrate; invertedly placing a chip with copper pillars as I/O ports on the substrate; and subjecting the chip and the substrate to hot-pressing sintering to enable the bonding.

A high frequency module includes a power amplifier and a substrate on which the power amplifier is mounted. The power amplifier includes a first external terminal and a second external terminal formed on a mounting surface. The substrate includes a first land electrode and a second land electrode formed on one principal surface. The first external terminal is connected to the first land electrode, and the second external terminal is connected to the second land electrode. A distance from the mounting surface to a connection surface of the first external terminal is shorter than a distance from the mounting surface to a connection surface of the second external terminal, and a distance from a connection surface of the first land electrode to the one principal surface is longer than a distance from a connection surface of the second land electrode to the one principal surface.

A display panel includes a substrate including a display area and a pad area spaced apart from the display area, and an uneven pad disposed on the substrate in the pad area. The uneven pad includes a first conductive layer, a first organic layer disposed on the first conductive layer and having an upper surface having an uneven shape, and a second conductive layer disposed on the first organic layer.

The invention concerns an electrical connection pad (10′) for providing an electrical connection between components of an electronic system, wherein the electrical connection pad comprises: a metallic layer (12); and a laser induced periodic surface structure (20), LIPSS, formed on an external surface (16) of the electrical connection pad (10) and exposing the metallic layer (12) and a method for correspondingly laser-treating an electrical connection pad (10).

An electronic device includes a multilevel package substrate with first and second levels extending in planes of first and second directions and spaced apart from one another along a third direction, the first level having a first side with landing areas spaced apart from one another along the first direction. The multilevel package substrate includes a conductive structure having first and second ends and conductive portions in the first and second levels that provide a conductive path along the first direction from the landing areas toward the second end, where the conductive structure includes indents that extend into the conductive portions in the first level, the indents spaced apart from one another along the first direction and positioned along the first direction between respective pairs of the landing areas.

One or more implementations of the subject technology may enable a bond-on-pad (BoP) substrate technology that can eliminate the need to utilize a solder-on-pad (SoP) process. Unlike an SoP process, a BoP Process does not require a solder bump to be formed on a bump pad to attach a joint to a bump pad. The size of an opening on a bump pad for a BoP process may be larger than that of an SoP process. A BoP process may use a solder mask having multiple thicknesses and may be thinner near the bump pads. A BoP process may use a joint having a copper pillar and a solder cap. A BoP process can be used with an underfill or a molding compound technology.

Provided is a ceramic laminated substrate which is formed on an electronic component to be mounted and is less likely to cause mounting defects even if there is irregularity in the height of solders. The ceramic laminated substrate includes: a ceramic laminate on which ceramic layers are laminated; via conductors; terminal electrodes; and a land electrode. The land electrode has a first land electrode and a second land electrode that are used to join different terminal electrodes of a single electronic component. The area of the first land electrode is smaller than the area of the second land electrode, and the first land electrode has a bump electrode and a plating layer, the second land electrode has a membrane electrode and plating layers, and the height of the first land electrode is formed higher than the height of the second land electrode.