Processing methods may be performed to form a fan-out interconnect structure. The methods may include forming a semiconductor active device structure overlying a first substrate. The semiconductor active device structure may include first conductive contacts. The methods may include forming an interconnect structure overlying a second substrate. The interconnect structure may include second conductive contacts. The methods may also include joining the first substrate with the second substrate. The joining may include coupling the first conductive contacts with the second conductive contacts. The interconnect structure may extend beyond the lateral dimensions of the semiconductor active device structure.

A semiconductor package includes: a substrate including an insulating layer, a plurality of pads on the insulating layer, a surface protective layer covering the insulating layer and having first through-holes exposing at least a portion of the insulating layer and second through-holes exposing at least a portion of each of the plurality of pads, a plurality of first dummy patterns extending from the plurality of pads to the first through-holes, and a plurality of second dummy patterns extending from the first through-holes to an edge of the insulating layer; a semiconductor chip on the substrate and including connection terminals electrically connected to the plurality of pads exposed through the second through-holes; and an encapsulant encapsulating at least a portion of the semiconductor chip and filling the first through-holes, wherein a separation distance between the first through-holes is greater than a separation distance between the second through-holes.

The invention concerns an electrical connection pad (10′) for providing an electrical connection between components of an electronic system, wherein the electrical connection pad comprises: a metallic layer (12); and a laser induced periodic surface structure (20), LIPSS, formed on an external surface (16) of the electrical connection pad (10) and exposing the metallic layer (12) and a method for correspondingly laser-treating an electrical connection pad (10).

The invention concerns an electrical connection pad (10′) for providing an electrical connection between components of an electronic system, wherein the electrical connection pad comprises: a metallic layer (12); and a laser induced periodic surface structure (20), LIPSS, formed on an external surface (16) of the electrical connection pad (10) and exposing the metallic layer (12) and a method for correspondingly laser-treating an electrical connection pad (10).

A connection structure embedded substrate includes a printed circuit board including a first insulating body and a plurality of first wiring layers disposed on at least one of an external region or an internal region of the first insulating body; and a connection structure embedded in the first insulating body and including first and second substrates. The first and second substrates are disposed adjacent to each other.

A connection structure embedded substrate includes a printed circuit board including a first insulating body and a plurality of first wiring layers disposed on at least one of an external region or an internal region of the first insulating body; and a connection structure embedded in the first insulating body and including first and second substrates. The first and second substrates are disposed adjacent to each other.

A semiconductor device and a method of forming the same are provided. The semiconductor device includes a die structure including a plurality of die regions and a plurality of first seal rings. Each of the plurality of first seal rings surrounds a corresponding die region of the plurality of die regions. The semiconductor device further includes a second seal ring surrounding the plurality of first seal rings and a plurality of connectors bonded to the die structure. Each of the plurality of connectors has an elongated plan-view shape. A long axis of the elongated plan-view shape of each of the plurality of connectors is oriented toward a center of the die structure.

A semiconductor device and a method of forming the same are provided. The semiconductor device includes a die structure including a plurality of die regions and a plurality of first seal rings. Each of the plurality of first seal rings surrounds a corresponding die region of the plurality of die regions. The semiconductor device further includes a second seal ring surrounding the plurality of first seal rings and a plurality of connectors bonded to the die structure. Each of the plurality of connectors has an elongated plan-view shape. A long axis of the elongated plan-view shape of each of the plurality of connectors is oriented toward a center of the die structure.

Disclosed is a method for manufacturing a semiconductor device which includes: a semiconductor chip; a substrate and/or another semiconductor chip; and an adhesive layer interposed therebetween. This method comprises the steps of: heating and pressuring a laminate having: the semiconductor chip; the substrate; the another semiconductor chip or a semiconductor wafer; and the adhesive layer by interposing the laminate with pressing members for temporary press-bonding to thereby temporarily press-bond the substrate and the another semiconductor chip or the semiconductor wafer to the semiconductor chip; and heating and pressuring the laminate by interposing the laminate with pressing members for main press-bonding, which are separately prepared from the pressing members for temporary press-bonding, to thereby electrically connect a connection portion of the semiconductor chip and a connection portion of the substrate or the another semiconductor chip.

Disclosed is a method for manufacturing a semiconductor device which includes: a semiconductor chip; a substrate and/or another semiconductor chip; and an adhesive layer interposed therebetween. This method comprises the steps of: heating and pressuring a laminate having: the semiconductor chip; the substrate; the another semiconductor chip or a semiconductor wafer; and the adhesive layer by interposing the laminate with pressing members for temporary press-bonding to thereby temporarily press-bond the substrate and the another semiconductor chip or the semiconductor wafer to the semiconductor chip; and heating and pressuring the laminate by interposing the laminate with pressing members for main press-bonding, which are separately prepared from the pressing members for temporary press-bonding, to thereby electrically connect a connection portion of the semiconductor chip and a connection portion of the substrate or the another semiconductor chip.