A semiconductor device includes a semiconductor die, an electrical contact arranged on a surface of the semiconductor die, and a metal layer arranged on the electrical contact, wherein the metal layer includes a singulated part of at least one of a metal foil, a metal sheet, a metal leadframe, or a metal plate. When viewed in a direction perpendicular to the surface of the semiconductor die, a footprint of the electrical contact and a footprint of the metal layer are substantially congruent.

A method for attaching a semiconductor die to a substrate includes providing a substrate that includes an attachment layer at a surface of the substrate. The attachment layer is covered by a protective flash plating layer. The protective flash plating layer has a reflow temperature less than or equal to a reflow temperature of the attachment layer. The method further includes preheating the substrate to a temperature greater than or equal to a reflow temperature of the attachment layer, attaching a semiconductor die to the attachment layer, and cooling the substrate and semiconductor die.

A sintering composition, consisting essentially of: a solvent; and a metal complex dissolved in the solvent, wherein: the sintering composition contains at least 60 wt. % of the metal complex, based on the total weight of the sintering composition; and the sintering composition contains at least 20 wt. % of the metal of the metal complex, based on the total weight of the sintering composition.

The present disclosure is directed to a hybrid conductive ink including: silver nanoparticles and eutectic low melting point alloy particles, wherein a weight ratio of the eutectic low melting point alloy particles and the silver nanoparticles ranges from 1:20 to 1:5. Also provided herein are methods of forming an interconnect including a) depositing a hybrid conductive ink on a conductive element positioned on a substrate, wherein the hybrid conductive ink comprises silver nanoparticles and eutectic low melting point alloy particles, the eutectic low melting point alloy particles and the silver nanoparticles being in a weight ratio from about 1:20 to about 1:5; b) placing an electronic component onto the hybrid conductive ink; c) heating the substrate, conductive element, hybrid conductive ink and electronic component to a temperature sufficient i) to anneal the silver nanoparticles in the hybrid conductive ink and ii) to melt the low melting point eutectic alloy particles, wherein the melted low melting point eutectic alloy flows to occupy spaces between the annealed silver nanoparticles, d) allowing the melted low melting point eutectic alloy of the hybrid conductive ink to harden and fuse to the electronic component and the conductive element, thereby forming an interconnect. Electrical circuits including conductive traces and, optionally, interconnects formed with the hybrid conductive ink are also provided.

Provided is a method for manufacturing a semiconductor device suitable for achieving low wiring resistance between semiconductor elements that is bonded via an adhesive layer and multi-layered. The method according to the present invention is as follows. First, a wafer laminate (W) is prepared, the wafer laminate (W) including a wafer (10) having a circuit forming surface (10a), a wafer (20) having a main surface (20a) and a back surface (20b), and an adhesive layer (30) containing an SiOC-based polymer. Then, a hole (H) is formed in the wafer laminate (W) by etching the wafer laminate (W) from the wafer (20) side via a mask pattern masking a portion of the main surface (20a) side of the wafer (20), the hole (H) extending through the wafer (20) and the adhesive layer (30) and reaching a wiring pattern (12b) in the wafer (10). Then, an insulating film (41) is formed on an inner surface of the hole (H). Then, the insulating film (41) on a bottom surface of the hole (H) is removed. Then, the wafer laminate (W) is subjected to a cleaning treatment (an oxygen plasma treatment and/or an Ar sputtering treatment). Then, a conductive portion is formed in the hole (H).

A bonding member (10) includes surface-processed silver surfaces (11a, 11b).

A jointing material includes: at least one type of element at 0.1 wt % to 30 wt %, the element being capable of forming a compound with each of tin and carbon; and tin at 70 wt % to 99.9 wt % as a main component.

A method for manufacturing a semiconductor device according to an aspect of the present disclosure includes a step of preparing a dicing/die-bonding integrated film including an adhesive layer formed of a heat-curable resin composition having a melt viscosity of 3100 Pa.Math.s or higher at 120° C., a tacky adhesive layer, and a base material film; a step of sticking a surface on the adhesive layer side of the dicing/die-bonding integrated film and a semiconductor wafer together; a step of dicing the semiconductor wafer; a step of expanding the base material film and thereby obtaining adhesive-attached semiconductor elements; a step of picking up the adhesive-attached semiconductor element from the tacky adhesive layer; a step of laminating this semiconductor element to another semiconductor element, with the adhesive interposed therebetween; and a step of heat-curing the adhesive.

A silver sintering preparation in the form of a silver sintering paste comprising 70 to 95 wt.-% of coated silver particles (A) and 5 to 30 wt.-% of organic solvent (B) or in the form of a silver sintering preform comprising 74.5 to 100 wt.-% of coated silver particles (A) and 0 to 0.5 wt.-% of organic solvent (B), wherein the coating of the coated silver particles (A) comprises silver acetylacetonate (silver 2,4-pentanedionate) and/or at least one silver salt of the formula C.sub.nH.sub.2n+1COOAg with n being an integer in the range of 7 to 10, and wherein the at least one silver salt is thermally decomposable at >160° C.

Provided is a semiconductor chip mounting tape. The semiconductor chip mounting tape comprises a tape base film including first and second surfaces opposite to each other; and an adhesive film including a third surface facing the first surface of the tape base film, and a fourth surface opposite to the third surface, wherein the adhesive film includes a plurality of voids therein, and the fourth surface of the adhesive film may be adhered to a semiconductor chip.