A die package having lead structures connecting to a die that provide for electromagnetic interference reductions. Mixed impedance leads connected to the die have a first lead with a first metal core, a dielectric layer surrounding the first metal core, and first outer metal layer connected to ground; and a second lead with a second metal core, and a second dielectric layer surrounding the second metal core, and a second outer metal layer connected to ground. Each lead reducing susceptibility to EMI and crosstalk.

A die interconnect system having a first die with a plurality of connection pads, and a ribbon lead extending from the first die, the ribbon lead having a plurality of metal cores with a core diameter, and a dielectric layer surrounding the metal core with a dielectric thickness, with at least a portion of dielectric being fused between adjacent metal cores along the length of the plurality of metal cores, and an outer metal layer attached to ground.

A semiconductor module includes: a semiconductor device having a front-side electrode; a bonding wire having a bonding portion bonded to the front-side electrode; a first sealing member; and a second sealing member. The first sealing member seals a portion where the front-side electrode and the bonding wire are bonded to each other. The second sealing member covers the first sealing member. The first sealing member is higher than the second sealing member in elastic modulus.

A semiconductor module includes: a semiconductor device having a front-side electrode; a bonding wire having a bonding portion bonded to the front-side electrode; a first sealing member; and a second sealing member. The first sealing member seals a portion where the front-side electrode and the bonding wire are bonded to each other. The second sealing member covers the first sealing member. The first sealing member is higher than the second sealing member in elastic modulus.

The invention relates to a heavy-wire bond arrangement, having a substrate (2), a heavy wire (1) and a high-voltage heavy-wire bond connection, in which an end bond section (4) of the heavy wire (1), which extends towards the end (7) of the heavy wire (1), is bonded to the substrate (2), such that in the area of the bond section (4) a bond contact (5) between the heavy wire (1) and the substrate (2) is formed, the heavy wire (1) having a tapering section (6) which adjoins the end of the wire (7) and in which the wire cross-section tapers towards the end of the wire (7). The application additionally relates to a method for producing a heavy-wire bond arrangement.

The invention relates to a heavy-wire bond arrangement, having a substrate (2), a heavy wire (1) and a high-voltage heavy-wire bond connection, in which an end bond section (4) of the heavy wire (1), which extends towards the end (7) of the heavy wire (1), is bonded to the substrate (2), such that in the area of the bond section (4) a bond contact (5) between the heavy wire (1) and the substrate (2) is formed, the heavy wire (1) having a tapering section (6) which adjoins the end of the wire (7) and in which the wire cross-section tapers towards the end of the wire (7). The application additionally relates to a method for producing a heavy-wire bond arrangement.

A die interconnect system having a plurality of connection pads, a heat generating element thermally isolated from the die, one or more leads extending from the die to the heat generating element, each lead having a metal core with a core diameter, a dielectric layer surrounding the metal core with a dielectric thickness, and an outer metal layer attached to ground, wherein one or more leads are exposed to ambient conditions and/or are convectively or contact cooled for at least a portion of their length to minimize heat transfer from the heat generating element to the die.

The application relates to a method for determining a bonding connection (1) in a component arrangement (2), wherein the method has the following steps: producing a bonding connection (1) between a bonding section (3) of a bonding wire (4) and a metallic contact point (5), structuring a top-side surface of the bonding wire (4) in the region of the bonding section (3) and determining the bonding connection (1), wherein in this case a test voltage is applied to the bonding wire (4) and the bonding connection (1) so that the bonding connection (1) heats up owing to the current flow, generating a thermogram for the heated bonding connection (1) and determining whether the bonding connection (1) has been produced correctly by evaluating the thermogram. Furthermore, the application relates to a test apparatus for determining a bonding connection (1) in a component arrangement (2).

A die package having a plurality of connection pads, a plurality of wire leads having metal cores with a defined core diameter, and a dielectric layer surrounding the metal cores having a defined dielectric thickness, at least one first connection pad held in a mold compound covering the die and the plurality of leads connected to at least one metal core, and at least one second connection pad held in the mold compound covering the die and the plurality of leads connected to at least one metal core. Further, the present invention relates to a method for manufacturing a substrate less die package.

A die package having a plurality of connection pads, a die substrate supporting a plurality of connection elements, a first lead having a first metal core with a first core diameter, and a dielectric layer surrounding the first metal core, the dielectric layer having a first dielectric thickness that varies along its length and/or the dielectric layer having an outer metal layer at least partially surrounding the dielectric layer, for selectively modifying the electrical characteristics of the lead.