H01L2225/1029

STACKED MODULE ARRANGEMENT
20230230905 · 2023-07-20 ·

A stacked module arrangement includes: a first molded electronic module; a second molded electronic module; and an interface by which the first molded electronic module and the second molded electronic module are physically and electrically connected to one another in a stacked configuration. The first molded electronic module is a power electronic module having a maximum breakdown voltage of at least 40 V and a maximum DC current of at least 10 A.

PACKAGE-ON-PACKAGE ASSEMBLY WITH WIRE BONDS TO ENCAPSULATION SURFACE

Apparatuses relating to a microelectronic package are disclosed. In one such apparatus, a substrate has first contacts on an upper surface thereof. A microelectronic die has a lower surface facing the upper surface of the substrate and having second contacts on an upper surface of the microelectronic die. Wire bonds have bases joined to the first contacts and have edge surfaces between the bases and corresponding end surfaces. A first portion of the wire bonds are interconnected between a first portion of the first contacts and the second contacts. The end surfaces of a second portion of the wire bonds are above the upper surface of the microelectronic die. A dielectric layer is above the upper surface of the substrate and between the wire bonds. The second portion of the wire bonds have uppermost portions thereof bent over to be parallel with an upper surface of the dielectric layer.

Three-dimensional functional integration

A packaged electronic device includes a package structure with opposite first and second sides spaced apart from one another along a first direction, and opposite third and fourth sides spaced apart from one another along a second direction, as well as first and second leads. The first lead includes a first portion that extends outward from the third side of the package structure and extends downward toward a plane of the first side and away from a plane of the second side. The second lead includes a first portion that extends outward from the third side of the package structure, and the second lead extends upward toward the plane of the second side and away from the plane of the first side to allow connection to another circuit or component, such as a second packaged electronic device, a passive circuit component, a printed circuit board, etc.

Flip-chip, face-up and face-down centerbond memory wirebond assemblies

A microelectronic assembly can include a substrate having first and second surfaces and an aperture extending therebetween, the substrate having terminals. The assembly can also include a first microelectronic element having a front surface facing the first surface of the substrate, a second microelectronic element having a front surface facing the first microelectronic element and projecting beyond an edge of the first microelectronic element, first and second leads electrically connecting contacts of the respective first and second microelectronic elements to the terminals, and third leads electrically interconnecting the contacts of the first and second microelectronic elements. The contacts of the first microelectronic element can be exposed at the front surface thereof adjacent the edge thereof. The contacts of the second microelectronic element can be disposed in a central region of the front surface thereof. The first, second, and third leads can have portions aligned with the aperture.

Integrated circuit packaging system with a grid array with a leadframe and method of manufacture thereof

A method of manufacture of an integrated circuit packaging system includes: forming a conductive trace having a terminal end and a circuit end; forming a terminal on the terminal end; connecting an integrated circuit die directly on the circuit end of the conductive trace, the integrated circuit die laterally offset from the terminal, the active side of the integrated circuit die facing the circuit end; and forming an insulation layer on the terminal and the integrated circuit die, the integrated circuit die covered by the insulation layer.

MICROELECTRONIC PACKAGES HAVING STACKED DIE AND WIRE BOND INTERCONNECTS
20170294410 · 2017-10-12 ·

A microelectronic package includes at least one microelectronic element having a front surface defining a plane, the plane of each microelectronic element parallel to the plane of any other microelectronic element. An encapsulation region overlying edge surfaces of each microelectronic element has first and second major surfaces substantially parallel to the plane of each microelectronic element and peripheral surfaces between the major surfaces. Wire bonds are electrically coupled with one or more first package contacts at the first major surface of the encapsulation region, each wire bond having a portion contacted and surrounded by the encapsulation region. Second package contacts at an interconnect surface being one or more of the second major surface and the peripheral surfaces include portions of the wire bonds at such surface, and/or electrically conductive structure electrically coupled with the wire bonds.

Device including multiple semiconductor chips and multiple carriers

A device includes a first semiconductor chip that is arranged over a first carrier and includes a first electrical contact. The device further includes a second semiconductor chip arranged over a second carrier and including a second electrical contact arranged over a surface of the second semiconductor chip facing the second carrier. The second carrier is electrically coupled to the first electrical contact and the second electrical contact.

Apparatus and Methods for Multi-Die Packaging

A packaged semiconductor device includes a first package substrate having a first plurality of lead fingers, a first die attached to a first major surface of the first package substrate, a second package substrate having a second plurality of lead fingers, wherein each of the second plurality of lead fingers extends over the first die and the second package substrate is electrically isolated from the first package substrate. The device also includes a second die attached to a first major surface of the second package substrate, over the first die, and an encapsulant surrounding the first die, the first package substrate, the second die, and the second package substrate, wherein the encapsulant exposes a portion of the first package substrate and a portion of the second package substrate.

PACKAGED SEMICONDUCTOR DEVICE HAVING BENT LEADS AND METHOD FOR FORMING

A package device has a first lead frame having a first flag. A first integrated circuit is on the first flag. A first encapsulant is over the first integrated circuit. A first plurality of leads is electrically bonded to the first integrated circuit. A first lead of the first plurality of leads has an inner portion covered by the first encapsulant and an outer portion extending outside the encapsulant. The outer portion has a hole and a bend at the hole. The outer portion extends above the first encapsulant.

Package-on-package assembly with wire bond vias

A microelectronic package includes a substrate having a first surface. A microelectronic element overlies the first surface. Electrically conductive elements are exposed at the first surface of the substrate, at least some of which are electrically connected to the microelectronic element. The package includes wire bonds having bases bonded to respective ones of the conductive elements and ends remote from the substrate and remote from the bases. The ends of the wire bonds are defined on tips of the wire bonds, and the wire bonds define respective first diameters between the bases and the tips thereof. The tips have at least one dimension that is smaller than the respective first diameters of the wire bonds. A dielectric encapsulation layer covers portions of the wire bonds, and unencapsulated portions of the wire bonds are defined by portions of the wire bonds, including the ends, are uncovered by the encapsulation layer.