Disclosed is a microelectronic device assembly comprising a substrate having conductors exposed on a surface thereof. Two or more microelectronic devices are stacked on the substrate and the components are connected with conductive material in preformed holes in dielectric material in the bond lines aligned with TSVs of the devices and the exposed conductors of the substrate. Methods of fabrication are also disclosed.

The field of the invention is that of producing 3D electronic modules, compatible with components operating beyond 1 GHz. The invention relates to a 3D electronic module featuring an interconnection between a horizontal conductor and a vertical conductor to which it is connected exhibits, in a vertical plane, a non-zero curvature. It also relates to the associated production process.

In an embodiment, a device includes: a processor die including circuit blocks, the circuit blocks including active devices of a first technology node; a power gating die including power semiconductor devices of a second technology node, the second technology node larger than the first technology node; and a first redistribution structure including first metallization patterns, the first metallization patterns including power supply source lines and power supply ground lines, where a first subset of the circuit blocks is electrically coupled to the power supply source lines and the power supply ground lines through the power semiconductor devices, and a second subset of the circuit blocks is permanently electrically coupled to the power supply source lines and the power supply ground lines.

A semiconductor device includes a first plurality of dies encapsulated by an encapsulant, an interposer over the first plurality of dies, an interconnect structure over and electrically connected to the interposer, and a plurality of conductive pads on a surface of the interconnect structure opposite the interposer. The interposer includes a plurality of embedded passive components. Each die of the first plurality of dies is electrically connected to the interposer. The interconnect structure includes a solenoid inductor in a metallization layer of the interconnect structure.

A control circuit is included in a first die of a stacked semiconductor device. The first die further includes a transistor that is electrically connected to the control circuit. The transistor is configured to be controlled by the control circuit to selectively block a die-to-die interconnect. In this way, the die-to-die interconnect may be selectively blocked to isolate the first die and a second die of the stacked semiconductor device for independent testing after bonding. This may increase the effectiveness of a testing to identify and isolate defects in the first die or the second die, which may further increase the effectiveness of performing rework or repair on the stacked semiconductor device.

A chip package includes a first interconnection scheme; a plurality of first metal contacts under and on the first interconnection scheme and at a bottom surface of the chip package; a first semiconductor IC chip over the first interconnection scheme; a first connector over the first interconnection scheme and at a same horizontal level as the first semiconductor IC chip, wherein the first connector comprises a first substrate and a plurality of first through vias vertically extending through the first substrate of the first connector; a first polymer layer over the first interconnection scheme, wherein the first polymer layer has a top surface coplanar with a top surface of the first semiconductor IC chip, a top surface of the first substrate of the first connector and a top surface of each of the plurality of first through vias; and a second interconnection scheme on the top surface of the first polymer layer, the top surface of the first semiconductor IC chip, the top surface of the first connector and the top surface of each of the plurality of first through vias, wherein the second interconnection scheme comprises a plurality of second metal contacts at a top surface of the chip package.

A package includes a first and a second package component. The first package component includes a first metal trace and a second metal trace at the surface of the first package component. The second metal trace is parallel to the first metal trace. The second metal trace includes a narrow metal trace portion having a first width, and a wide metal trace portion having a second width greater than the first width connected to the narrow metal trace portion. The second package component is over the first package component. The second package component includes a metal bump overlapping a portion of the first metal trace, and a conductive connection bonding the metal bump to the first metal trace. The conductive connection contacts a top surface and sidewalls of the first metal trace. The metal bump is neighboring the narrow metal trace portion.

Disclosed are semiconductor packages and their fabrication methods. The semiconductor package includes a redistribution substrate that includes an organic dielectric layer and a metal pattern in the organic dielectric layer, and a semiconductor chip on the redistribution substrate. The organic dielectric layer has a maximum absorbance equal to or greater than about 0.04 at a first wavelength range, and a fluorescence intensity equal to or greater than about 4×10.sup.3 at the first wavelength range. The first wavelength range is about 450 nm to about 650 nm.

A semiconductor device includes a first chip and a second chip bonded to the first chip. The first chip includes: a substrate; a logic circuit disposed on the substrate; and a plurality of first dummy pads that are disposed above the logic circuit, are disposed on a first bonding surface where the first chip is bonded to the second chip, the plurality of first dummy pads not being electrically connected to the logic circuit. The second chip includes a plurality of second dummy pads disposed on the plurality of first dummy pads and a memory cell array provided above the plurality of second dummy pads. A coverage of the first dummy pads on the first bonding surface is different between a first region and a second region, the first region separated from a first end side of the first chip, the second region disposed between the first end side and the first region.

An electronic device includes a first interposer, a first integrated circuit (IC) device affixed to the first interposer, a second interposer, and a second IC device affixed to the second interposer. he second interposer is bonded to the first interposer. The first interposer includes first interposer circuitry and a first connection element electrically connected to the first interposer circuitry. The second interposer includes second interposer circuitry and a second connection element electrically connected to the second interposer circuitry. The second connection element is bonded to the first connection element to define a connection element pair. The connection element pair provides an electrical connection between the first interposer circuitry and the second interposer circuitry.